6r045a
Abstract: IPW60R045CPA 6r045 mosfet 6r045A IPW60R099CPA IPB60R099CPA IPB60R199CPA PG-TO-247-3 PG-TO247
Contextual Info: IPW60R045CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.045 Ω 150 nC Features • Worldwide best R ds,on in TO247 • Ultra low gate charge PG-TO247-3 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified
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ipw60r045cpapg-to247-36r045apg-to262-3-1+9pg-to220-3-1pg-to247-3-416r045mosfet 6r045aipw60r099cpaipb60r099cpaipb60r199cpapg-to-247-3pg-to247
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sd 431 transistor
Abstract: 6R045A 6r045 ED-44 diode
Contextual Info: IPW60R045CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.045 Ω 150 nC • Worldwide best R ds,on in TO247 • Ultra low gate charge PG-TO247-3 • Extreme dv/dt rated • High peak current capability
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ipw60r045cpa6r045apg-to247-3ipw60pg-to263-3-2+6pg-to262-3-1pg-to220-3-1pg-to247-3-41sd 431 transistor6r045ed-44 diode
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mosfet 6R199
Abstract: 6R199 IPB60R199CPA IPB60R099CPA IPI60R099CPA IPP60R099CPA PG-TO-263-3-2 PG-TO263 6R199A
Contextual Info: IPB60R199CPA CoolMOS Power Transistor Product Summary 600 V DS V 0.199 Ω R DS on ,max 33 Q g,typ nC Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO263-3 • High peak current capability • Automotive AEC Q101 qualified
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ipb60r199cpapg-to263-36r199apg-to262-3-1+9pg-to220-3-1pg-to247-3-41mosfet 6r1996r199ipb60r099cpaipi60r099cpaipp60r099cpapg-to-263-3-2pg-to263
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PG-TO262-3-1
Abstract: 6R099 df RN transistor A93V IPB60R099CPA IPB60R199CPA IPI60R099CPA IPW60R099CPA PG-TO247-3-41 6R099A
Contextual Info: IPI60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.105 Ω 60 nC • Worldwide best Rds,on in TO262 • Ultra low gate charge PG-TO262-3-1 • Extreme dv/dt rated • High peak current capability
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ipi60r099cpapg-to262-3-16r099apg-to263-3-2+8pg-to220-3-1pg-to247-3-416r099df rn transistora93vipb60r099cpaipb60r199cpaipw60r099cpa
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6R299A
Abstract: 6r299 IPB60R099CPA IPC60R075 IPC60R075CPA IPB60R199CPA IPI60R099CPA IPP60R099CPA DS1058 IPB60R299CPA
Contextual Info: IPB60R299CPA CoolMOSTM Power Transistor Product Summary 600 V DS V 0.299 Ω R DS on ,max 22 Q g,typ nC Features • Lowest figure-of-merit Ron x Qg PG-TO263-3 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified
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ipb60r299cpapg-to263-36r299apg-to262-3-1+10pg-to220-3-1pg-to247-3-416r299ipb60r099cpaipc60r075ipc60r075cpaipb60r199cpaipi60r099cpaipp60r099cpads1058
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6r099a
Abstract: 6r099 DIODE ED 11
Contextual Info: IPW60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.105 Ω 60 nC • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO247-3 • High peak current capability
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ipw60r099cpa6r099apg-to247-3ipw60pg-to263-3-2+5pg-to262-3-1pg-to220-3-1pg-to247-3-416r099diode ed 11
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6r099
Abstract: df RN transistor
Contextual Info: IPP60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Features ed nd me ns om sig ec de tr w e no rn fo Q g,typ 600 V 0.105 Ω 60 nC • Worldwide best R ds,on in TO220 • Ultra low gate charge PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability
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ipp60r099cpa6r099apg-to220-3-1apg-to263-3-2+4pg-to262-3-1pg-to247-3-416r099df rn transistor
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IPW60R099CPA
Abstract: PG-TO247 6R099A IPI60R099CPA IPB60R099CPA IPB60R199CPA PG-TO-247-3
Contextual Info: IPW60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO247-3 • High peak current capability • Automotive AEC Q101 qualified
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ipw60r099cpapg-to247-36r099apg-to262-3-1+7pg-to220-3-1pg-to247-3-41pg-to247ipi60r099cpaipb60r099cpaipb60r199cpapg-to-247-3
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IPP60R099CPA
Abstract: IPB60R099CPA IPB60R199CPA PG-TO220-3 IPW60R045CPA 6R099A IPC60R075CPA
Contextual Info: IPP60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best R ds,on in TO220 • Ultra low gate charge PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified
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ipp60r099cpapg-to220-3-16r099apg-to262-3-1+6pg-to247-3-41ipb60r099cpaipb60r199cpapg-to220-3ipw60r045cpaipc60r075cpa
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df RN transistor
Abstract: 6R075P DIODE ED 26 6R075
Contextual Info: IPW60R075CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.075 Ω 87 nC • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO247-3 • High peak current capability
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ipw60r075cpapg-to247-36r075paippg-to263-3-2+7pg-to262-3-1pg-to220-3-1pg-to247-3-41df rn transistor6r075pdiode ed 266r075
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Diode SMD ED 98
Abstract: diode smd ed 06 SMD TRANSISTOR MARKING ed SMD TRANSISTOR MARKING ME transistor smd marking ND smd transistor ed transistor smd marking mE smd diode ED 46 smd diode ED me smd transistor
Contextual Info: IPB60R299CPA CoolMOSTM Power Transistor Product Summary 600 V DS 0.299 Ω R DS on ,max 22 Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features V nC • Lowest figure-of-merit Ron x Qg PG-TO263-3 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability
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ipb60r299cpa6r299apg-to263-3pg-to263-3-2+13pg-to262-3-1pg-to220-3-1pg-to247-3-41diode smd ed 98diode smd ed 06smd transistor marking edsmd transistor marking metransistor smd marking ndsmd transistor edtransistor smd marking mesmd diode ed 46smd diode edme smd transistor
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ipb60r099cpa
Abstract: IPI60R099CPA 6R099 TO262-3-1 IPB60R199CPA IPW60R045CP PG-TO262-3-1
Contextual Info: IPI60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO262 • Ultra low gate charge PG-TO262-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified
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ipi60r099cpapg-to262-3-16r099apg-to220-3-1+6pg-to247-3-41ipb60r099cpa6r099to262-3-1ipb60r199cpaipw60r045cp
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Diode SMD ED 98
Abstract: SMD TRANSISTOR MARKING ed transistor smd marking ND PG-TO-263-3-2 PG-TO263-3-2 diode smd ED 21 SMD TRANSISTOR MARKING ME diode smd ed 18 diode smd ed 02 Energy Me
Contextual Info: IPB60R099CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.105 Ω 60 nC • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability
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ipb60r099cpapg-to263-3-26r099apg-to262-3-1+11pg-to220-3-1pg-to247-3-41diode smd ed 98smd transistor marking edtransistor smd marking ndpg-to-263-3-2diode smd ed 21smd transistor marking mediode smd ed 18diode smd ed 02energy me
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TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
Contextual Info: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!
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tle4957csle66r35e7sak-xc2060m-104f80l aaesd204+6saf-xc2268m-72f66l aaxc2336tle7242tle50412edl23n06btn7970
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PG-TO247
Abstract: ipw60r075cpa IPB60R099CPA IPB60R199CPA IPI60R099CPA
Contextual Info: IPW60R075CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.075 Ω 87 nC Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO247-3 • High peak current capability • Automotive AEC Q101 qualified
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ipw60r075cpapg-to247-36r075papg-to262-3-1+6pg-to220-3-1pg-to247-3-41pg-to247ipb60r099cpaipb60r199cpaipi60r099cpa
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DIODE ED 99
Abstract: mosfet 6R199 diode smd ED 35 transistor smd marking ND IPB60R199CPA smd transistor ds 65 SMD TRANSISTOR MARKING ed me smd transistor SMD TRANSISTOR MARKING ME smd diode EC
Contextual Info: IPB60R199CPA CoolMOS Power Transistor Product Summary 600 V DS 0.199 Ω R DS on ,max 33 Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features V nC • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO263-3 • High peak current capability
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ipb60r199cpa6r199apg-to263-3pg-to263-3-2+12pg-to262-3-1pg-to220-3-1pg-to247-3-41diode ed 99mosfet 6r199diode smd ed 35transistor smd marking ndsmd transistor ds 65smd transistor marking edme smd transistorsmd transistor marking mesmd diode ec
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