diode smd ED 17
Abstract: smd diode ED diode smd ed 02 ersa rds 80 ST SMD SCR diode smd ed 25 smd diode ED 47
Text: Diode ± 10% Accuracy Current Sink I nt egrat ed OVP PWM Dim m ing: 1k t o 30kHz, 10 t o 100% Dut y , Fe a t u r e s The AAT2610 is a highly int egrat ed power m anagem ent solut ion specifically suit ed for Digit al St ill Cam era ( DSC) syst em s, feat uring seven DC- DC swit ching regulat ors , m ed Buck or Boost Delay ⢠I nt egrat ed Soft- St art ⢠Over-Volt age and Over-Tem perat ure , - ion bat t eries, 2- cell alkaline bat t eries, and USB and regulat ed AC- DC wall adapt ers. All
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AAT2610
AAT2610
diode smd ED 17
smd diode ED
diode smd ed 02
ersa rds 80
ST SMD SCR
diode smd ed 25
smd diode ED 47
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2012 - UV-LED
Abstract: No abstract text available
Text: UVLED-385-400- SMD TECHNICAL DATA High Power UVLED, SMD Features ⢠⢠⢠⢠Zener diode is built in the protective circuit against static electricity Low Voltage DC Operated High Power , only and subjected to change without prior notice. 16.02.2012 UVLED-385-400- SMD 1 of 7 , lead-free (Pd free) 16.02.2012 UVLED-385-400- SMD 2 of 7 Typical Performance Curves Forward , Ambient Temp. vs. Allowable Forward Current 16.02.2012 UVLED-385-400- SMD 3 of 7 Forward
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UVLED-385-400-SMD
UV-LED
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2012 - Not Available
Abstract: No abstract text available
Text: UVLED-365-330- SMD TECHNICAL DATA High Power UVLED, SMD Features ⢠⢠⢠⢠Zener diode is built in the protective circuit against static electricity Low Voltage DC Operated High Power , only and subjected to change without prior notice. 16.02.2012 UVLED-365-330- SMD 1 of 7 , lead-free (Pd free) 16.02.2012 UVLED-365-330- SMD 2 of 7 Typical Performance Curves Forward , Ambient Temp. vs. Allowable Forward Current 16.02.2012 UVLED-365-330- SMD 3 of 7 Forward
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UVLED-365-330-SMD
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2009 - Diode SMD ED 98
Abstract: diode smd ed 06 SMD TRANSISTOR MARKING ed SMD TRANSISTOR MARKING ME transistor smd marking ND smd transistor ed transistor smd marking mE smd diode ED 46 smd diode ED me smd transistor
Text: diode I F=f(V SD) parameter: T j 102 ed nd me ns om sig ec de tr w e no rn fo 120 V 101 150 , diode switching characteristics ed nd me ns om sig ec de tr w e no rn fo Rev. 2.0 page 8 2009-09-09 , compliant) CoolMOS CPA is specially designed for: · DC/DC converters for Automotive Applications ed , otherwise specified Parameter Continuous diode forward current Diode pulse current1) Reverse diode dv /dt 3) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 6.6 34 15 V/ns Unit A ed nd me ns om sig ec de
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IPB60R299CPA
6R299A
PG-TO263-3
PG-TO263-3
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
PG-TO247-3-41
PG-TO247-3-41
Diode SMD ED 98
diode smd ed 06
SMD TRANSISTOR MARKING ed
SMD TRANSISTOR MARKING ME
transistor smd marking ND
smd transistor ed
transistor smd marking mE
smd diode ED 46
smd diode ED
me smd transistor
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2009 - Diode SMD ED 98
Abstract: SMD TRANSISTOR MARKING ed transistor smd marking ND PG-TO-263-3-2 PG-TO263-3-2 diode smd ED 21 SMD TRANSISTOR MARKING ME diode smd ed 18 diode smd ed 02 Energy Me
Text: 2009-03-25 IPB60R099CPA Definition of diode switching characteristics ed nd me ns om sig ec de , IPB60R099CPA CoolMOS® Power Transistor Product Summary V DS 600 0.105 Q g,typ ed , IPB60R099CPA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current IS Diode pulse current1) I S,pulse Reverse diode dv /dt 3) Value Symbol Conditions dv /dt 18 T C=25 °C A 93 15 ed nd me ns om sig ec de tr ew no rn fo
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IPB60R099CPA
PG-TO263-3-2
6R099A
PG-TO262-3-1
PG-TO220-3-1
PG-TO247-3-41
Diode SMD ED 98
SMD TRANSISTOR MARKING ed
transistor smd marking ND
PG-TO-263-3-2
PG-TO263-3-2
diode smd ED 21
SMD TRANSISTOR MARKING ME
diode smd ed 18
diode smd ed 02
Energy Me
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2009 - DIODE ED 99
Abstract: mosfet 6R199 diode smd ED 35 transistor smd marking ND IPB60R199CPA smd transistor ds 65 SMD TRANSISTOR MARKING ed me smd transistor SMD TRANSISTOR MARKING ME smd diode EC
Text: Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 25 °C, 98% ed nd me ns om sig , 7 2009-09-01 IPB60R199CPA Definition of diode switching characteristics ed nd me ns om , compliant) CoolMOS CPA is specially designed for: · DC/DC converters for Automotive Applications ed , otherwise specified Parameter Continuous diode forward current Diode pulse current1) Reverse diode dv /dt 3) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 9.9 51 15 V/ns Unit A ed nd me ns om sig ec de
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IPB60R199CPA
6R199A
PG-TO263-3
PG-TO263-3
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
PG-TO247-3-41
PG-TO247-3-41
DIODE ED 99
mosfet 6R199
diode smd ED 35
transistor smd marking ND
IPB60R199CPA
smd transistor ds 65
SMD TRANSISTOR MARKING ed
me smd transistor
SMD TRANSISTOR MARKING ME
smd diode EC
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3528 LED warm white
Abstract: smd 3528 white 3528 LED smd 3528 led SMD led 3528 LED white SMD 3528 Smd 3528 heat generation led SMD 3528 NS3528WHEA-B1BP 000 smd diode ED
Text: 3528 Flash White Color SMD Type LED 3528 Size Flash White Color SMD Type LED Part Number , : 82-31-704-2607 -1- 3528 Flash White Color SMD Type LED 1. General Description The document describes the specification of 3528 size, flash white color SMD type LED. Chip LEDs, or SMD type LEDs, are , required. 1-1. Features Size : 3.5 x 2.8 x 1.8 mm (L×W×H) SMD (Surface-Mount Device) type , . Cathode 3528 Flash White Color SMD Type LED 2. Specification 2-1. Absolute Maximum Rating (Ta
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S3528WH-EA
NS-120
3528 LED warm white
smd 3528
white 3528 LED
smd 3528 led
SMD led 3528
LED white SMD 3528
Smd 3528 heat generation
led SMD 3528
NS3528WHEA-B1BP
000 smd diode ED
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diode smd ed 49
Abstract: smd diode code ED JJ SMD diode a8 smd diode ED DIODE SMD A8 smd code marking A8 diode smd diode code I5 A8 JJ SMD diode diode smd marking ed st smd diode marking code
Text: Information SMD -220 Tape & Reel TRR 1 -60 (-Q63) r\ IOR Appendix C PART NUMBER Appendix D FE ED DIRECTION TRL , design, low on-resistance and cost-effectiveness. The SMD -220 is a surface mount power package capable of , on-resistance in any existing surface mount package. The SMD -220 is suitable for high current applications , Repetitive Avalanche Energy © 5.0 mJ dv/dt Peak Diode Recovery dv/dt ® 4.8 V/ns Tj, Tstg Junction and , (Body Diode ) â â 4.4 A MOSFET symbol _s showingthe / I , integral reverse a\ ¡lL p-n junction diode
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IRF624S
SMD-220
D-63S0
G214b7
i09Zj
diode smd ed 49
smd diode code ED
JJ SMD diode a8
smd diode ED
DIODE SMD A8
smd code marking A8 diode
smd diode code I5
A8 JJ SMD diode
diode smd marking ed
st smd diode marking code
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2014 - UVLED375-SMD
Abstract: No abstract text available
Text: UVLED375-SMD TECHNICAL DATA 375 nm SMD UVLED Features ⢠⢠⢠⢠Zener diode is , 9 Moisture Resistance Cycle JEITA ED -4701 330 301 JEITA ED -4701 330 303 JEITA ED -4701 330 307 JEITA ED -4701 100 105 JEITA ED -4701 200 203 10 High Temperature Storage 11 12 , 1 Time >95% 20 cycles 100 cycles 10 cycles JEITA ED -4701 200 201 Ta=100°C 1000 Hr 50 50/50 Low Temperature Storage JEITA ED -4701 200 202 Ta=-40°C 1000 Hr 50 50
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UVLED375-SMD
UVLED375-SMD
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2010 - UVLED365_SMD
Abstract: No abstract text available
Text: UVLED365-SMD TECHNICAL DATA 365 nm SMD UVLED Features ⢠⢠⢠⢠Zener diode is , Resistance Cycle JEITA ED -4701 330 301 JEITA ED -4701 330 303 JEITA ED -4701 330 307 JEITA ED -4701 100 105 JEITA ED -4701 200 203 10 High Temperature Storage 11 12 -40°C ~ 25°C ~ 100 , cycles 100 cycles 10 cycles JEITA ED -4701 200 201 Ta=100°C 1000 Hr 50 50/50 Low Temperature Storage JEITA ED -4701 200 202 Ta=-40°C 1000 Hr 50 50/50 Vibration JEITA ED
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UVLED365-SMD
uvled365
UVLED365_SMD
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2014 - UVLED375E-SMD
Abstract: No abstract text available
Text: UVLED375E-SMD TECHNICAL DATA 375 nm SMD UVLED Features ⢠⢠⢠⢠Zener diode is , Resistance Cycle JEITA ED -4701 330 301 JEITA ED -4701 330 303 JEITA ED -4701 330 307 JEITA ED -4701 100 105 JEITA ED -4701 200 203 10 High Temperature Storage 11 12 -40°C ~ 25 , % 20 cycles 100 cycles 10 cycles JEITA ED -4701 200 201 Ta=100°C 1000 Hr 50 50/50 Low Temperature Storage JEITA ED -4701 200 202 Ta=-40°C 1000 Hr 50 50/50 Vibration
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UVLED375E-SMD
UVLED375E-SMD
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2005 - diode smd ED 68
Abstract: LNK302 LNK304 Application Note PI-3755-121003 LNK304 PI-3752-121003 PI-3757-112103 LNK304PG PI-3492-111903 isolation Application Note LNK304
Text: manufacturable in SMD EcoSmart Extremely Energy Efficient · Consumes typically only 50/80 mW in self-powered , discontinuous conduction mode. 3. Continuous conduction mode. 4. Packages: P: DIP-8B, G: SMD -8B. For lead-free , reference for the BYPASS and FEEDBACK pins. P Package (DIP-8B) G Package ( SMD -8B) S 1 8 2 7 , of a The power processing stage is formed by the LinkSwitch-TN, freewheeling diode D1, output , the mostly discontinuous-mode (MDCM). Diode D1 is an ultra-fast diode with a reverse recovery time
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LNK302/304-306
LNK302
diode smd ED 68
LNK304 Application Note
PI-3755-121003
LNK304
PI-3752-121003
PI-3757-112103
LNK304PG
PI-3492-111903
isolation Application Note LNK304
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smd diode a7
Abstract: jsp sot-23 marking
Text: SILICON PLANAR HIGH SPEED SWITCHING DIODES 3 BAV99 SOT-23 Formed SMD Package Pin Configurat ion , Series Diode Pair ABSOLUTE MAXIMUM RATINGS (Rating Per Diode ) SYMBOL VALUE UNIT VRRM 100 , =25º C unless specified otherwise) per diode 0.855 V 1.0 V IF = 150mA 1.25 V VR , -23 Formed SMD Package Pin Configuration 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE 2 1 ELECTRICAL CHARACTERISTICS (Ta=25º C unless specified otherwise) per diode MAX UNIT VR=0V, f
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BAV99
OT-23
C-120
200310E
smd diode a7
jsp sot-23 marking
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diode smd ED 74
Abstract: No abstract text available
Text: SURFACE MOUNT SCHOTTKY BARRIER DIODES BAS70W, BAS70-04W BAS70-05W, BAS70-06W SOT-323 Formed SMD , ABSOLUTE MAXIMUM RATINGS (per diode ) DESCRIPTION Continuous Reverse Voltage SYMBOL VR VALUE 70 , otherwise) Per diode DESCRIPTION SYMBOL TEST CONDITION MIN VF IF=1mA Forward Voltage IF=10mA IF , method) Diode Capacitance VR=70V IR 10 µA VR=50V Reverse Current µA ps pF t , Limited Data Sheet Page 1 of 3 BAS70W, BAS70-04W BAS70-05W, BAS70-06W SOT-323 Formed SMD
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BAS70W,
BAS70-04W
BAS70-05W,
BAS70-06W
OT-323
BAS70W
BAS70-05W
diode smd ED 74
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ts 4141
Abstract: No abstract text available
Text: VOLTAGE SWITCHING DIODE BAS521 SOD- 523 Formed SMD Package Marking:- with cathode band BAS521 â L4 High Speed and High Voltage Switching Diode ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL , mA IF=5mA 50 ns 5.0 pF trr Diode Capacitance 0.15 VR=250V, Ta=150ºC VR , Limited Data Sheet Page 1 of 3 BAS521 SOD- 523 Formed SMD Package BAS521 Rev 170210E , SMD Package Com pon e n t D isposa l I n st r u ct ion s 1. CDI L Sem iconduct or Devices are RoHS
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BAS521
C-120
BAS521
170210E
ts 4141
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D12G60
Abstract: diode smd ED 17
Text: IDD12SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary â , ! 3G Diode designed for fast switching applications like: ⢠SMPS e.g.; CCM PFC ⢠Motor Drives , T j=25 °C 600 V Diode dv/dt ruggedness dv/ dt VR= 0â¦.480 V 50 V/ns Power , . typ. max. - - 1.2 SMD version, device on PCB, minimal footprint - - 75 SMD version, device on PCB, 6 cm2 cooling area5) - 50 - 600 - - Thermal
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IDD12SG60C
20mA2)
D12G60
diode smd ED 17
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Not Available
Abstract: No abstract text available
Text: CMBD1201, 1202, 1203 CMBD1204, 1205 SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL HIGH SPEED DIODES CMBD1201, 1202, are all single diodes CMBD1203 is a dual diode , in series CMBD1204 is a dual diode , common cathode CMBD1205 is a dual diode , common anode Marking CMBD1203 - 26 CMBD1204 â , 1 CMBD1204 3 2 1 CMBD1205 3 ABSOLUTE MAXIMUM RATINGS (per diode ) Continuous , RATINGS (per diode ) (at TA = 25°C unless otherwise Limiting values Continuous reverse voltage
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CMBD1201,
CMBD1204,
OT-23
CMBD1203
CMBD1204
CMBD1205
CMBD1204
CMBD1205
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smd transistor 1yc
Abstract: smd tr 1yc smd marking ACH marking code yc SMD Transistor 8302401E marking code EA SMD Transistor 8302401EA A13j 6n140a
Text: itting diode which is optically coupled to an integrated high gain photon detector. The high gain output , Selection Guide table for details. Standard Military Drawing ( SMD ) p arts are available for each package and , 8978503KYA 8978503KZA Available Available 16 pin Flat Pack U nform ed Leads 4 Vcc, GND HCPL-6750 HCPL , Solder Dipped B utt Cut/Gold Plate Gull W ing/Soldered Crew Cut/Gold Plate Class H SMD Part # P , 596289785022X Class K SMD Part # P rescrip t for all below E ither Gold or Solder Gold Plate Solder Dipped B
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6N140A*
HCPL-675X
HCPL-570X
HCPL-177K
HCPL-573X
HCPL-673X
IL-PRF-38534
L-38534,
5964-2063E
5966-2799E
smd transistor 1yc
smd tr 1yc
smd marking ACH
marking code yc SMD Transistor
8302401E
marking code EA SMD Transistor
8302401EA
A13j
6n140a
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Not Available
Abstract: No abstract text available
Text: diode wit h DC rat ed current equal t o t he input current t o allow an adequat e m argin for safe use , wafer- level chip scale package ( WLCSP) and is rat ed over t he - 40°C t o + 85°C t em per at ure , induct or bet ween LX and input supply ( VI N) ; Schot tky rect iï¬ er anode is connect ed bet ween LX pin while cat hode is connect ed t o out put capacit or. Supply input for t he I C. Connect a 4.7Î , m ainly relat ed t o t he out put capacit or valued. See t he Capacit or Select ion sect ion in t
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AAT1403
AAT1403
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1999 - 230V SCR speed control
Abstract: DIODE smd me 07 SMD DATABOOK
Text: ED R FO OD R NE UC W T DE SIG NS LX1668 - LinFinity MV-GX Sanyo MV-GX Sanyo 2N6504 SMD LX1669 , Copyright © 1999 Rev. 1.0a,2005-03-09 NO T R OB EC SO OM L ME ET ND E P ED R FO OD R NE UC W T DE SIG NS , ED R FO OD R NE UC W T DE SIG NS T H E R MAL DATA 120°C/W 12V Supply Voltage (VCC12 , ED R FO OD R NE UC W T DE SIG NS Symbol VCORE (Unless otherwise specified, 4.75V < VCC5 < 5.25V , ET ND E P ED R FO OD R NE UC W T DE SIG NS Processor Pins VID2 0 = Low, 1 = High Table 1 -
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LX1669
100mV
LX1669
LX1668
230V SCR speed control
DIODE smd me 07
SMD DATABOOK
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smd diode 5H
Abstract: No abstract text available
Text: SILICON PLANAR SWITCHING DIODE CMBD4148 SOT-23 Formed SMD Package 3 Pin Configurat ion 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking CMBD4148 = 5H High Speed Switching Diode ABSOLUTE , CHARACTERISTICS (Ta=25ºC unless specified otherwise) per diode MIN DESCRIPTION SYMBOL TEST CONDITION VF IF , Diode Capacitance Cd VR=0V, f=1MHz 2.0 pF Reverse Recovery Time trr IF=10mA to IR , Data Sheet Page 1 of 3 CMBD4148 SOT-23 Formed SMD Package Packing Detail P KAG AC E S
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CMBD4148
OT-23
C-120
CMBD4148REV
161007E
smd diode 5H
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2001 - syk 07
Abstract: ASP-601 diode sy 170/syk 07
Text: www.eLED.com Package Dimensions 3.2x1.6mm SMD CHIP LED LAMPS EPTR3216EC HIGH EFFICIENCY , Light Emitting Diode . The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode . The Super Bright Green source color devices are made with Gallium Phosphide Green Light Emitting Diode . The Pure Green source color devices are made with Gallium Phosphide Green Light Emitting Diode . The Super Bright Red source color devices are made with Gallium
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EPTR3216EC
EPTR3216NW
EPTR3216SGC
EPTR3216QGW
EPTR3216PGW
EPTR3216YC
EPTR3216PYW
EPTR3216SRCPRV
EPTR3216SURC
EPTR3216SURCK
syk 07
ASP-601
diode sy 170/syk 07
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diode smd ED 35
Abstract: No abstract text available
Text: age rat ing should be higher t han 24V. Select a diode wit h DC rat ed current equal t o t he input , 0805KRCT 6* 6* 5 Surface Mount Schot t ky Barrier Diode Power I nduct or 10 H 0.9A SMD Red LED 0805 , ( WLCSP) and is rat ed over t he - 40°C t o + 85°C t em per at ure range. Applica t ion s ⢠â , input supply ( VI N) ; Schot t ky rect iï¬ er anode is connect ed bet ween LX pin while cat hode is connect ed t o out put capacit or. Supply input for t he I C. Connect a 4.7μF 6.3V/ 10V ceram ic capacit
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AAT1401
AAT1401
diode smd ED 35
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Not Available
Abstract: No abstract text available
Text: rat ing should be higher t han 16V. Select a diode wit h DC rat ed current equal t o t he input , ky Barrier Diode Power I nduct or 10 H 0.9A SMD Red LED 0805 12V 50m A Pushbut t on , rat ed over t he - 40°C t o + 85°C t em per at ure range. Applica t ion s ⢠⢠⢠⢠â , rect iï¬ er anode is connect ed bet ween LX pin while cat hode is connect ed t o out put capacit or , t o GND. Com pensat ion com ponent s are m ainly relat ed t o t he out put capacit or valued. See t
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AAT1410
AAT1410
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Not Available
Abstract: No abstract text available
Text: SILICON SCHOTTKY DIODE UBMS10BC 3 SOT-23 Formed SMD Package Pin Configurat ion 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE 1 2 Marking: ACS Dual Schottky Diode , in Series ABSOLUTE , Voltage Diode Capacitance Continental Device India Limited SYMBOL VF IR VR CT TEST CONDITION , UNIT V µA V pF Page 1 of 3 UBMS10BC SOT-23 Formed SMD Package SOT-23 Formed SMD Package , ers are request ed t o please dispose as per prevailing Environm ent al Legislat ion of t heir Count
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UBMS10BC
OT-23
C-120
UBMS10BCRev
131102E
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