6r299p
Abstract: 6r299
Contextual Info: IPA60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge Q g,typ V 6.6 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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6r299p
Abstract: SP000103251 IPW60R299CP CoolMOS Power Transistor JESD22 DS1058
Contextual Info: IPW60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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ipw60r299cppg-to247-3-1sp0001032516r299p+3coolmos power transistorjesd22ds1058
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IPL60R299CP
Abstract: 6R299P ipl60r JESD22 6R29
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 2.0, 2010-10-01 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast
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ipl60r299cp150mm6r299pipl60r+2jesd226r29
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6r299p
Abstract: IPW60R299CP SP000103251 JESD22 6R29 6r299
Contextual Info: IPW60R299CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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ipw60r299cppg-to247-3sp0001032516r299p+3jesd226r296r299
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6R299P
Abstract: 6r299 PG-TO-220-3-1 PG-TO220-3-1 IPP60R299CP JESD22 SP000084280 INFINEON transistor IPP60R299
Contextual Info: IPP60R299CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg 600 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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ipp60r299cppg-to220-3-1sp0000842806r299p+46r299pg-to-220-3-1jesd22infineon transistor ipp60r299
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EL series SMD transistor
Abstract: 6R299P ipl60R299cp mosfet 600v JESD22 ipl60r IPL60 6r299
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description
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ipl60r299cp150mmel series smd transistor6r299p+5mosfet 600vjesd22ipl60ripl606r299
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6R299P
Abstract: IPP60R299CP INFINEON transistor IPP60R299 IPP60R299 JESD22 SP000084280 6r299
Contextual Info: IPP60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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ipp60r299cppg-to220sp0000842806r299p+4infineon transistor ipp60r299ipp60r299jesd226r299
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6R299A
Abstract: 6r299 IPB60R099CPA IPC60R075 IPC60R075CPA IPB60R199CPA IPI60R099CPA IPP60R099CPA DS1058 IPB60R299CPA
Contextual Info: IPB60R299CPA CoolMOSTM Power Transistor Product Summary 600 V DS V 0.299 Ω R DS on ,max 22 Q g,typ nC Features • Lowest figure-of-merit Ron x Qg PG-TO263-3 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified
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ipb60r299cpapg-to263-36r299apg-to262-3-1+10pg-to220-3-1pg-to247-3-416r299ipb60r099cpaipc60r075ipc60r075cpaipb60r199cpaipi60r099cpaipp60r099cpads1058
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6r299p
Abstract: PG-TO220FP IPA60R299CP 6r299
Contextual Info: IPA60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge Q g,typ V 6.6 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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6R299P
Abstract: IPL60R299CP 6r299 g1 smd diode
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 2.1, 2012-01-10 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast
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6R299P
Abstract: 6R250P 6r299 6R250 IPA60R250CP 2500VA JESD22 PG-TO220-3-31 CoolMOS Power Transistor
Contextual Info: IPA60R250CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max@T j= 25°C • Ultra low gate charge Q g,typ V 6.6 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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ipa60r250cppg-to220pg-to220fp6r250p+76r299p6r2996r2502500vajesd22pg-to220-3-31coolmos power transistor
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6r299p
Abstract: PG-TO247-3-1 TRANSISTOR marking ar code 6R229PIPW60R299CP IPW60R299CP 6r299 JESD22 SP000103251
Contextual Info: IPW60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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6R299P
Abstract: 6r299 6R229PIPW60R299CP 6R299P tO247 IPW60R299CP PG-TO-247-3 JESD22 SP000103251 R/6R299P tO247
Contextual Info: IPW60R299CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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6r299p
Abstract: SP000103251 IPW60R299CP
Contextual Info: IPW60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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ipl60r
Abstract: 6R299P 600V/6R299P
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 1.1, 2010-06-28 Preliminary Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description Pr The CoolMOS™ CP series offers devices which provide all benefits of a fast
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Diode SMD ED 98
Abstract: diode smd ed 06 SMD TRANSISTOR MARKING ed SMD TRANSISTOR MARKING ME transistor smd marking ND smd transistor ed transistor smd marking mE smd diode ED 46 smd diode ED me smd transistor
Contextual Info: IPB60R299CPA CoolMOSTM Power Transistor Product Summary 600 V DS 0.299 Ω R DS on ,max 22 Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features V nC • Lowest figure-of-merit Ron x Qg PG-TO263-3 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability
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ipb60r299cpa6r299apg-to263-3pg-to263-3-2+13pg-to262-3-1pg-to220-3-1pg-to247-3-41diode smd ed 98diode smd ed 06smd transistor marking edsmd transistor marking metransistor smd marking ndsmd transistor edtransistor smd marking mesmd diode ed 46smd diode edme smd transistor
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6R299P
Abstract: IPP60R299CP JESD22 SP000084280 DS1058 CoolMOS Power Transistor
Contextual Info: IPP60R299CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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6R299P
Abstract: 6r299 CoolMOS Power Transistor IPP60R299CP JESD22 SP000084280 IPP60R299 6R29
Contextual Info: IPP60R299CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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6r299
Abstract: 6R250P 6R299P
Contextual Info: IPA60R250CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max@T j= 25°C • Ultra low gate charge Q g,typ V 6.6 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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6R299P
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 2.1, 2012-01-10 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast
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6R299P
Abstract: 6r299 IPP60R299CP IPP60R299 JESD22 SP000084280 INFINEON transistor IPP60R299 D44 MARKING CODE
Contextual Info: IPP60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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6R299P
Abstract: 6r299 PG-TO220FP IPA60R299CP JESD22 SP000096438 PG-TO220-FP CoolMOS Power Transistor 6R29
Contextual Info: IPA60R299CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max@T j= 25°C • Ultra low gate charge Q g,typ V 6.6 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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6R299P
Contextual Info: IPA60R250CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max@T j= 25°C • Ultra low gate charge Q g,typ V 6.6 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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6r299p
Abstract: 6r299 IPA60R299CP PG-TO220-3-31 JESD22 SP000096438 6R29
Contextual Info: IPA60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge Q g,typ V 6.6 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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