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    TE Connectivity 1SNA168516R2500

    BJM6 ASSBL JUMP BAR 2 POLE Entrelec
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    Master Electronics 1SNA168516R2500 195
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    Sager 1SNA168516R2500 1,420
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    Interstate Connecting Components 1SNA168516R2500
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    Bourns Inc 4116R-2-502LF

    Res Thick Film NET 5K Ohm 2% 2.25W ±100ppm/°C BUS Molded 16-Pin DIP Pin Thru-Hole
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    Avnet Americas 4116R-2-502LF Tube 8 Weeks 2,000
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    Newark 4116R-2-502LF Bulk 2,000
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    TE Connectivity 1SNA206126R2500

    ABB-CONNECTION - SNA SERIES ACCESSORIES MOQ Reduction
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    Master Electronics 1SNA206126R2500
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    Avnet Americas 1SNA206126R2500 Bag 17 Weeks, 5 Days 24
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    Sager 1SNA206126R2500 1
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    TME 1SNA206126R2500 1
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    TE Connectivity 1SNA233236R2500

    ABB-CONNECTION - CONNECTION - MARKERS
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    TE Connectivity 1SNA190006R2500

    ABB-CONNECTION - SNA SERIES SCREW TERMINAL BLOC
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    Master Electronics 1SNA190006R2500
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    Avnet Americas 1SNA190006R2500 Box 23 Weeks, 4 Days 10
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    Sager 1SNA190006R2500 10
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    6R250 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    6R250P

    Abstract: IPW60R250CP JESD22
    Contextual Info: IPW60R250CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		ipw60r250cppg-to2476r250pjesd22 PDF

    6R250P

    Abstract: 6R250 IPP60R250CP JESD22
    Contextual Info: IPP60R250CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		ipp60r250cppg-to2206r250p6r250+1jesd22 PDF

    6R250P

    Abstract: 6R250 IPW60R250CP JESD22
    Contextual Info: IPW60R250CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		ipw60r250cppg-to2476r250p009-134-a+4o-247pg-to247-36r250jesd22 PDF

    6R299P

    Abstract: 6R250P 6r299 6R250 IPA60R250CP 2500VA JESD22 PG-TO220-3-31 CoolMOS Power Transistor
    Contextual Info: IPA60R250CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max@T j= 25°C • Ultra low gate charge Q g,typ V 6.6 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		ipa60r250cppg-to220pg-to220fp6r250p+76r299p6r2996r2502500vajesd22pg-to220-3-31coolmos power transistor PDF

    6R250P

    Abstract: IPB60R250CP JESD22 PG-TO263-3-2 6R250
    Contextual Info: IPB60R250CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max • Ultra low gate charge V Q g,typ 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		ipb60r250cpp-to263-3p-to2636r250p+3jesd22pg-to263-3-26r250 PDF

    6R250P

    Abstract: 6R250
    Contextual Info: IPP60R250CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max • Ultra low gate charge V Q g,typ 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		ipp60r250cppg-to2206r250p6r250 PDF

    6r299

    Abstract: 6R250P 6R299P
    Contextual Info: IPA60R250CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max@T j= 25°C • Ultra low gate charge Q g,typ V 6.6 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		ipa60r250cppg-to220pg-to220fp6r250p+26r299p6r299 PDF

    6R299P

    Contextual Info: IPA60R250CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max@T j= 25°C • Ultra low gate charge Q g,typ V 6.6 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		ipa60r250cppg-to220pg-to220fp6r250p+16r299p PDF

    6R250P

    Abstract: IPI60R250CP JESD22
    Contextual Info: IPI60R250CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		ipi60r250cppg-to2626r250pjesd22 PDF