B4015L Search Results

4015L

Contextual Info: MOTOROLA Order this document by MBR4015LWT/D SEMICONDUCTOR TECHNICAL DATA Advance Information M B R 4015L W T SWITCHMODE Power R ectifier . . using the Schottky Barrier principle this state-of-the-art device is dedicated to the ORing function in paralleling power supply and has the following features:

B4015L

Abstract: MBR4015LWT
Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

B4015LG

Abstract: diode code yw B4015L MBR4015CTL MBR4015CTLG marking code YW DIODE
Contextual Info: MBR4015CTL SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • • • • • • • http://onsemi.com Center−Tap Configuration Guardring for Stress Protection

B4015LG

Abstract: B4015L MBR4015CTL MBR4015CTLG SCHOTTKY BARRIER RECTIFIER aka
Contextual Info: MBR4015CTL SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 40 A Total 20 A Per Diode Leg Pb−Free Packages are Available*

B4015L

Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package Employing the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

Contextual Info: MBR4015CTL SWITCHMODE] Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 40 A Total 20 A Per Diode Leg Pb−Free Packages are Available*

B4015L

Abstract: dmbr4015ctl
Contextual Info: MBR4015CTL SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: • • • • • • Center−Tap Configuration Guardring for Stress Protection

B4015L

Abstract: MBR4015CTL
Contextual Info: MBR4015CTL SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • • • Center–Tap Configuration Guardring for Stress Protection

Contextual Info: MOTOROLA Order this document by MBR4015LWT/D SEMICONDUCTOR TECHNICAL DATA MBR4015LWT Advance Information SWITCHMODE Pow er R ectifier Motorola Preferred Device . . . using the Schottky Barrier principle this s ta te -o f-th e -a rt device is dedicated to the ORing function in paralleling power supply and has the

B4015LG

Abstract: code onsemi Z Diode B4015L MBR4015CTL MBR4015CTLG
Contextual Info: MBR4015CTL SWITCHMODE] Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 40 A Total 20 A Per Diode Leg Pb−Free Packages are Available*

Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

U840 diode motorola

Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in

B4015L

Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

rectifier diode 6 amp 400 volt

Abstract: rectifier diode 20 amp 400 volt 4015L 400 amp 20 volt rectifier Diode Marking
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M B R 4015LW T SWITCHMODE Power Rectifier M o to ro la Preferred D e vice . . . u sin g th e S c h o ttk y B a rrie r p rin c ip le th is s t a te - o f- th e - a r t d e v ic e is ded ica te d to th e O R ing fu n ctio n in p a ra lle ling pow e r supp ly and has the