MBR4015 Search Results

Contextual Info: Data Sheet Customer： Product : High Power Schottky Diode Part No.: MBR4040CT/MBR4060CT/MBR40100CT/MBR40150CT MBR40200CT/MBR0250CT Issued Date: 11-Jan-11 Edition : REV.A VIKING TECH CORPORATION 光頡科技股份有限公司 VIKING TECH CORPORATION KAOHSIUNG BRANCH

MBR40150

Abstract: mbr40150pt
Contextual Info: E L E C T R O N I C MBR40150PT Power Schottky Rectifier - 40Amp 150Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity

4015L

Contextual Info: MOTOROLA Order this document by MBR4015LWT/D SEMICONDUCTOR TECHNICAL DATA Advance Information M B R 4015L W T SWITCHMODE Power R ectifier . . using the Schottky Barrier principle this state-of-the-art device is dedicated to the ORing function in paralleling power supply and has the following features:

MBR4015LWT

Abstract: MBR4015LWTG
Contextual Info: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

MBR40150CT

Contextual Info: SANGDEST MICROELECTRONICS MBR40150CT Technical Data Data Sheet N0773, Rev. - Green Products MBR40150CT SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • •

MBR40150PT

Abstract: 4045PT MBR40150 40100PT 40150PT MBR40100PT 4060PT
Contextual Info: MBR4045PT . MBR40150PT 40.0 Amp. Schottky Barrier Rectifier TO-3P 1 2 Current 40 A Voltage 45 V to 150 V • Plastic material used carries Underwriters Laboratory Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency.

Contextual Info: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

B4015L

Abstract: MBR4015LWT
Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

B4015LG

Abstract: diode code yw B4015L MBR4015CTL MBR4015CTLG marking code YW DIODE
Contextual Info: MBR4015CTL SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • • • • • • • http://onsemi.com Center−Tap Configuration Guardring for Stress Protection

Contextual Info: MBR4045PT . MBR40150PT 40.0 Amp. Schottky Barrier Rectifier TO-3P 1 2 Current 40 A Voltage 45 V to 150 V • Plastic material used carries Underwriters Laboratory Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency.

Contextual Info: SANGDEST MICROELECTRONICS MBR40150WT Technical Data Data Sheet N0774, REV. A Green products MBR40150WT SCHOTTKY RECTIFIER Applications: • • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Center tap configuration

B4015LG

Abstract: B4015L MBR4015CTL MBR4015CTLG SCHOTTKY BARRIER RECTIFIER aka
Contextual Info: MBR4015CTL SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 40 A Total 20 A Per Diode Leg Pb−Free Packages are Available*

B4015L

Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package Employing the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

MBR 40150

Abstract: MBR40150PT MBR40150 MBR40100PT MBR4035PT MBR4050PT MBR4060PT
Contextual Info: MBR4035PT - MBR40150PT 40.0 AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop

Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

Contextual Info: MBR4015CTL SWITCHMODE] Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 40 A Total 20 A Per Diode Leg Pb−Free Packages are Available*

B4015L

Abstract: dmbr4015ctl
Contextual Info: MBR4015CTL SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: • • • • • • Center−Tap Configuration Guardring for Stress Protection

B4015L

Abstract: MBR4015CTL
Contextual Info: MBR4015CTL SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • • • Center–Tap Configuration Guardring for Stress Protection

Contextual Info: MOTOROLA Order this document by MBR4015LWT/D SEMICONDUCTOR TECHNICAL DATA MBR4015LWT Advance Information SWITCHMODE Pow er R ectifier Motorola Preferred Device . . . using the Schottky Barrier principle this s ta te -o f-th e -a rt device is dedicated to the ORing function in paralleling power supply and has the

Contextual Info: MBR4015LWTG Switch Mode Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

B4015LG

Abstract: code onsemi Z Diode B4015L MBR4015CTL MBR4015CTLG
Contextual Info: MBR4015CTL SWITCHMODE] Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 40 A Total 20 A Per Diode Leg Pb−Free Packages are Available*

Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

MBR40150PT

Abstract: MBR40150
Contextual Info: E L E C T R O N I C MBR40150PT Power Schottky Rectifier - 40Amp 150Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity

B4015L

Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low