TO114 PACKAGE Search Results

PT-8502

Abstract: MT-1042 pt-9504 2N5928 TO114 1042 TO114 package PPS-250 TO63 package PT-7501
Contextual Info: Click on the underlined number to see specs on the part or package. Please contact the company for more information on other parts and packages. Part Number 70 AMPS PT-7501 PT-7502 PT-7503 PT-7509 PT-3512 Voltage Package 100 120 150 200 325 TO-63 TO-63 TO-63

TO63 package

Abstract: 2N5250 2N3265 transistor 114 2N5539 2N3150 2N3266 2N3847 2N4002 2N4003
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 1*FE@ Ic/ V ce (min/max @ A/V) VcE(sat) @ I c/I b (V @ A/A) p“ d * WATTS Ìt (MHz) NPN TO-63 2N3265 90 20 25-55@15/2 l@20/2 100 20 2N3266 60 20 20-80@15/3

NPN 200 VOLTS 20 Amps POWER TRANSISTOR

Abstract: 2N3021 2n3223 2N3589 NPN 20 Amps POWER TRANSISTOR to63 MT27 NPN 90 Amps POWER TRANSISTOR to63 2N3025 2NXXXX TO63 package
Contextual Info: r ^ 3 *t3 SILICON TRANSISTOR C O R P _ 8 8 0 0 0 7 9 2 DE lflES40ea O O O O T T S b flfl NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type Polarity lcMax Amps VCECKSUS) Volts Package Type Polarity . ^ 33^77 lc Max Amps VCEO(SUS)

TO63 package

Abstract: TRANSISTOR C 2570 TO114 package 2n3150 2N3265 transistor 2n4866 2N5251 2N5539 2N6048 2N5927 JAN
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE NPN TO-63 La Ì DEVICE TYPE d i A T * Tc = 100°C 1*FE@ Ic/ VcE min/max @ A/V VcE(sat) @ Ic^Ib (V @ A/A) p“ d* fr WATTS (MHz) 2N3265 90 20 25-55@15/2 1@20/2 100 20 2N3266 60 20 20-80@ 15/3

LT082

Abstract: LT081 LT089 LT081S SML55405 transistors 1U BUR20 TC15U800
Contextual Info: POWER SILICON TRANSISTORS Item Number •c Part Number Manufacturer Type Max hFE fT ICBO Max t0N Max on ON Min Hz) (A) (s) 300 325 350 400 400 400 400 425 425 450 700 625 230 300 625 885 1 7k 350 530 350 V(BR)CEO Max (A) PD r <CE)Mt Max (Ohms) Toper Max

NSP5665

Abstract: sat 1205
Contextual Info: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *

PTB501

Abstract: TO114 package powertech
Contextual Info: “BIG IDEAS IN BIG POWER ” M H PowerTech • 200 AMPERES PT-B501 P T -650 2 SILICON IMPIM TRANSISTORS MAXIMUM RATINGS SYMBOL Collector-Base Voltage V CBO Collector-Emitter Voltage PT-6501 PT-6502 80V 100 V 60V 80V 10V 10V V CEO Emitter-Base Voltage V EBO

2N5385

Abstract: 2NXXXX 2N5349 2N5480 2N5672 2N5675 2N5348 2N5384 TO114 package 2N5388
Contextual Info: K lr » □ □ □ ° Q ru ru X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o 0 0 0 0 0 CO00 00 0 0 O O O O O CO CD 00 00 00 O O O O O 00 O O CD CD O O O O O 0 0 0 0 0 IO 10 to to 10 O O O O O in to 10 to to OOOOO to IO to Ö Ö O O O O O OOOOO OOOOO

2N3017

Contextual Info: SILICON NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N2823 2N2824 2N2825 2N2858 2N2859 2N2877 2N2878 2N2879 2N2880 2N2881 2N2882 2N2892 2N2893 2N2911 2N2983 2N2984

PT-S501

Abstract: powertech
Contextual Info: “BIG IDEAS IN 200 AM PERES F T -6501 P T -65 0 2 S ILICO N IMPINI T R A N S IS T O R S MAXIMUM RATINGS PT-6501 PT-6502 80V 100V 60V 80V 10V 10V 200A 200A 100A 100 A 350W 350W 200W 200W -65 to 200° C -65 to 200°C -65 to 200°C -65 to 200° C SYMBOL Collector-Base Voltage

Contextual Info: 17E D • "BIG IDEAS IN DG0G311 M ■ Il BIG POWER ■ PowerTech POWERTECH INC 200 A M P ER ES T-53-»5 -6501 PT-B502 ft SILICON NPN TRANSISTORS SYMBOL MAXIMUM RATINGS Collector-Base Voltage PT-6501 PT-6502 80V 100V 60V 80V 10V 10V V CBO Collector-Emitter Voltage

Contextual Info: BIPOLAR NPN PLANAR POWER TRANSISTORS AMPS hFE min/max m •c < < o PEAK o O CO LU 1 O J > o m > DEVICE TYPE PACKAGE VCE sat max VOLTS ■c @ 'b A A TO-63 2N3265 90 20.0 25- 55 15.0/2.0 1.0 20.0/2.0 O I« 2N3266 60 20.0 20- 80 15.0/3.0 1.6 20.0/2.0 ÎA jl

Contextual Info: Z CL CL CL CL C L Z Z Z Z Z CL CL CL CL CL CL CL CL CL Z Z Z Z Z Q- CL CL CL CL z zzzz Q- CL CL CL CL 2N4910 2N4911 2N4912 2N4913 2N4914 CL CL CL CL CL Z Z Z Z Z CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz o o o o o c l cl o dd z zz z ‘

2n5480

Contextual Info: K □ □ □ ° Q ru ru lr X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o CD r- CO CD CD CD IO lO Ó Ó Ó Ó Ó 1— 1 — 1— f— I— to to CO CO to Ó Ó Ó Ó Ó f— 1— 1— 1— 1— TO-3 TO-39/TO-5 TO-111 TO-61 TO-3 » TO-3 T0-3 TO-59 T0-111

2N2464

Abstract: TO-59 Package TO114 package SIS 672 2N2210 transistor 2N2210 TO111 package TO61 package 2N3725 ultra low noise NPN transistor
Contextual Info: SME D GENERAL TRANSISTOR CORP BTaöODl 00QG07M Q General Transistor Corporation 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 SMALL SIGNAL TRANSISTORS NPN General Purpose Typ» No, Plot (mW) VCEO

2n5347

Abstract: a/TO111 2n5100
Contextual Info: 8254022 S I L I CON T R A N S I S T O R CORP 88D 0 0 7 9 4 “ûû D Ì T | a 2 5 4 0 2 2 00007=14 0 NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Polarity lc Max Amps 2N4999 2N5000 2N5001 2N5002 2N5003 PNF NPN PNP NPN PNP 2.0 2.0 2.0 5,0

PowerTech

Abstract: TO114 package TO114
Contextual Info: BIG :D£.Av BIG POWER ” • PowerTech PACKAGING *111 POWERTECH INNOVATIVE PACKAGING In addition to the flexible packaging capabilities shown above TO-63, TO-114, Powerblock Power Modules , Powertech has developed a new state-of-the-art package through significant effort in design technology. The new

Contextual Info: 17E ]> • BIG IDEAS IN BIG POWER” M H TETÖTbM 0GD033D fi ■ PowerTech POldERTECH INC TIO AMPERES 'T -S 3 -IS PT-4503 PT-4504 HIGH VOLTAGE SILICON IMPIM TRANSISTOR TYPE PT-4503 PT-4504 Collector-Base Voltage, Vq b q 450V 500V Collector-Em itter Voltage, V q ^ q

PT4504

Abstract: PT4503
Contextual Info: üiG IDEAS in BIG POWER ” • Power!ech 110 AMPERES PT-4503 PT-4504 HIGH VOLTAGE SILICON IMPIM TR AN SIS TO R TYPE PT-4503 PT-4504 Collector-Base Voltage, V q q q 450V 500V C ollector-E m itter Voltage, V q ^ q 400V 450V ABSOL UTE MAXIMUM RATINGS 10V Em itter-Base Voltage, V ^gQ

PTB501

Abstract: PT6501
Contextual Info: -É t ó I Ù E À 5 ir< - BIG POWER " P o w • e r T e c h SC O A M P E R E S PT - 6501 P T -B 5 0 2 SILICON NPN TRANSISTORS PT-6501 PT-6502 V CBO eov 100 V V CEO aov

Contextual Info: BIG POWER” M M • PowerTecn HO AMPERES PT-4503 PT-4504 HIGH VOLTAGE SILICON IMPIMTRANSISTOR TYPE PT-4503 PT-4504 Collector-Base Voltage, Vq q q 450V 500V C ollector-E m itter Voltage, V q ^ q 400V 450V ABSO LU TE MAXIMUM RATINGS 10V Emitter-Base Voltage, VEB q

transistor PT 4500

Contextual Info: 17 E D • TS'JÛTbM □□□□331 T POliJERTECH INC "BIG IDEAS IN BIG POWER” ■ PowerTecri 150AMPERES PT-4500 T-SVIS HIGH VOLTAGE SILICON NPN TRANSISTOR FEATURES V c E s a t . 0.75 @ 100 A hF E .

Contextual Info: - "EKTiBEKSlFi- PowerTech 200 AMPERES PT - 6 5 0 1 PT-65D2 SILICON NPN THAN SI STOPS MAXIMUM RATINGS SYMBOL Collector-Base1Voltage Collector-Emitter VcjltagK Ertfiitser Baw Voltage Peak Collector Current PT-S501

KSD 166

Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
Contextual Info: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5