TO-251 MOSFET Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate MOSFETS CJD02N60 N-Channel Power MOSFET TO-251 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate MOSFETS CJD01N60 N-Channel Power MOSFET TO-251 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate MOSFETS CJD01N60 N-Channel Power MOSFET TO-251 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading

PJP1N80

Contextual Info: PJP1N80 / PJU1N80 TO-220AB/TO-251 800V N-Channel Enhancement Mode MOSFET FEATURES TO-220AB • 1A, 800V, RDS ON =16Ω@VGS=10V, ID=0.5A • • • • • TO-251 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

D2N60

Abstract: U2N60
Contextual Info: PJD2N60 / PJU2N60 TO-252 / TO-251 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A, 600V, RDS ON =4.6Ω@VGS=10V, ID=1.0A • • • • • • TO-251 TO-252 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

P1N80

Abstract: U1N80 ELER
Contextual Info: PJP1N80 / PJU1N80 TO-220AB/TO-251 800V N-Channel Enhancement Mode MOSFET FEATURES TO-220AB • 1A, 800V, RDS ON =16Ω@VGS=10V, ID=0.5A • • • • • • TO-251 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

SID15N10

Abstract: MosFET 15N10
Contextual Info: SID15N10 15A, 100V, RDS ON 110mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-251 DESCRIPTION The SID15N10 provide the designer with the best combination of fast switching. The TO-251 package is

IRFU210A

Abstract: IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL
Contextual Info: Discrete MOSFET TO-251 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-251(IPAK) N-Channel FDU3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDU6512A 20 Single - 0.021 0.031

SID05N10

Abstract: MosFET 05n10
Contextual Info: SID05N10 5A , 100V , RDS ON 170 mΩ Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free TO-251 DESCRIPTION The SID05N10 provide the designer with the best combination of fast switching, The TO-251 package is

CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223

mosfet 300V 10A

Abstract: M01N60 mosfet 10V 10A n channel mosfet mosfet 10a 600v 2a 400v mosfet to-251 FAST RECOVERY DIODE 10A 400V
Contextual Info: N Channel MOSFET M01N60 1.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits

mosfet 600V 20A

Abstract: M02N60 Mosfet 600V, 20A TO 220 Package High current N CHANNEL MOSFET MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220
Contextual Info: N Channel MOSFET M02N60 2.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits

PJ1N60

Contextual Info: PJ1N60 Power Field Effect Transistor T he PJ1N60 Series is a high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage- TO-252 TO-251 blocking capability without degrading performance over time.In addition, this advanced MOSFET is designed to withstand high

Contextual Info: PJ2N60 Power Field Effect Transistor T he PJ2N60 Series is a high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage- blocking capability without degrading performance over time.In TO-251 addition, this advanced MOSFET is designed to withstand high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT50N03 Power MOSFET 45A, 25V N-CHANNEL POWER MOSFET 1 TO-251  FEATURES * RDS ON < 14mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  1 TO-252 SYMBOL

N mosfet 100v 200A

Contextual Info: ST36N10D N Channel Enhancement Mode MOSFET 36.0A DESCRIPTION STN36N10D is used trench technology to provide excellent RDS on and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) TO-252 TO-251

IXTU1N80P

Abstract: T1N80 1N80P
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G S VDSS ID25 IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P RDS(on) TO-251 (IXTU) TO-220 (IXTP) (TAB) G G (TAB) S Test Conditions VDSS TJ = 25°C to 150°C

1N80P

Abstract: T1N80 IXTU1N80P IXTA1N80P IXTA1N80 IXTP1N80P
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G S VDSS ID25 RDS(on) TO-251 (IXTU) TO-220 (IXTP) (TAB) G G (TAB) D S Symbol Test Conditions VDSS TJ = 25°C to 150°C

168B

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT50N03 Power MOSFET 45A, 25V N-CHANNEL POWER MOSFET „ 1 FEATURES TO-252 * RDS ON = 14mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified „ 1 SYMBOL TO-251 2.Drain

Contextual Info: PolarTM Power MOSFET VDSS = 500V = 5A ID25 RDS on ≤ 1.4Ω Ω IXTU5N50P IXTY5N50P IXTA5N50P IXTP5N50P N-Channel Enhancement Mode Avalanche Rated TO-251 (IXTU) G S D (Tab) TO-252 (IXTY) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

IXTA5N50P

Abstract: IXTP5N50P IXTU5N50P
Contextual Info: IXTU5N50P IXTY5N50P IXTA5N50P IXTP5N50P PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = 500V = 5A ID25 RDS on ≤ 1.4Ω Ω TO-251 (IXTU) G S D (Tab) TO-252 (IXTY) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

ut3055

Abstract: diode BA 158 mosfet BA 95 S
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3055 Power MOSFET 12A, 25V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION TO-252 The UTC UT3055 is N-Channel logic level enhancement mode field effect transistor. „ SYMBOL 2.Drain 1 TO-251 1.Gate 3.Source „ ORDERING INFORMATION

STD5NE10

Contextual Info: STD5NE10 N - CHANNEL 100V - 0.32 Ω - 5A TO-251/TO-252 STripFET POWER MOSFET TYPE STD5NE10 VDSS R DS on ID 100 V < 0.4 Ω 5A TYPICAL RDS(on) = 0.32 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE TESTED 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION

Contextual Info: VDSS ID25 IXTU05N100 IXTY05N100 High Voltage Power MOSFET = = ≤ RDS on 1000V 750mA Ω 17Ω N-Channel Enhancement Mode Avalanche Rated TO-251 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ