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    PJP1N80

    Contextual Info: PJP1N80 / PJU1N80 TO-220AB/TO-251 800V N-Channel Enhancement Mode MOSFET FEATURES TO-220AB • 1A, 800V, RDS ON =16Ω@VGS=10V, ID=0.5A • • • • • TO-251 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current


    Original     		pjp1n80pju1n80o-220ab/to-251o-220ab+4iec612492002/95/eco-251mil-std-750 PDF

    P1N80

    Abstract: U1N80 ELER
    Contextual Info: PJP1N80 / PJU1N80 TO-220AB/TO-251 800V N-Channel Enhancement Mode MOSFET FEATURES TO-220AB • 1A, 800V, RDS ON =16Ω@VGS=10V, ID=0.5A • • • • • • TO-251 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current


    Original     		pjp1n80pju1n80o-220ab/to-251o-220ab+6o-2512002/95/ecmil-std-750p1n80u1n80eler PDF