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    M02N60 Datasheets (2)

    Stanson Technology
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    M02N60
    		Stanson Technology N Channel MOSFET Original PDF 61.72KB 5
    M02N60B
    		Stanson Technology N Channel MOSFET Original PDF 81.98KB 5

    M02N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    M02N60B

    Abstract: MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220 mosfet 600V 20A 4470 mosfet
    Contextual Info: N Channel MOSFET M02N60B 2.0A PIN CONFIGURATION FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS on Specified at Elevated


    Original     		m02n60bo-251/252o-220o-220-3l+6mosfet 400v to-220n channel mosfet600v 2a mosfet n-channeln channel mosfet to220mosfet 600v 20a4470 mosfet PDF

    mosfet 600V 20A

    Abstract: M02N60 Mosfet 600V, 20A TO 220 Package High current N CHANNEL MOSFET MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220
    Contextual Info: N Channel MOSFET M02N60 2.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits


    Original     		m02n60o-251o-252o-251/252+9o-22000a/smosfet 600v 20amosfet 600v, 20ato 220 package high current n channel mosfetmosfet 400v to-220n channel mosfet600v 2a mosfet n-channeln channel mosfet to220 PDF