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Honeywell Sensing and Control 1TL1-51 MICRO SWITCH™ Toggle Switches: TL Series Single Pole Double Throw (SPDT) 2 Position Half Throw (On - Mom. On) Screw Terminals Standard Lever Military Part Number MS24523-32
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	1TL1-51		85			1 $52.46 10 $42.56 100 $37.73 1000 $36.30 10000 $36.30	Buy Now
Newark	1TL1-51	Bulk			4	1 - 10 $56.17 100 $52.27 1000 $52.27 10000 $52.27	Buy Now
TME	1TL1-51				2	1 - 10 $45.61 100 $45.61 1000 $45.61 10000 $45.61	Get Quote
Powell Electronics	1TL1-51		11		1	1 $50.07 10 $42.76 100 $42.76 1000 $42.76 10000 $42.76	Buy Now
Honeywell Sensing and Control 2TL1-51 MICRO SWITCH™ Toggle Switches: TL Series Double Pole Double Throw (DPDT) 2 Position Half Throw (On - Mom. On) Screw Terminals Standard Lever Military Part Number MS24524-32
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	2TL1-51		69			1 $73.19 10 $62.69 100 $47.95 1000 $47.83 10000 $47.83	Buy Now
Newark ()	2TL1-51	Bulk			50	1 - 10 - 100 $57.07 1000 $57.07 10000 $57.07	Buy Now
	2TL1-51	Bulk			3	1 - 10 $69.27 100 $64.65 1000 $64.65 10000 $64.65	Buy Now
RS	2TL1-51	Bulk		24 Weeks	50	1 - 10 - 100 $73.12 1000 $64.35 10000 $64.35	Get Quote
TME	2TL1-51		46		3	1 - 10 $34.18 100 $28.69 1000 $28.69 10000 $28.69	Buy Now
Powell Electronics	2TL1-51		5		50	1 - 10 - 100 $41.45 1000 $36.57 10000 $31.71	Buy Now

FDH Electronics	2TL1-51		51		1	1 $78.72 10 $68.12 100 $56.23 1000 $51.34 10000 $50.60	Get Quote
Honeywell Sensing and Control 1TL1-51E MICRO SWITCH™ Toggle Switches: TL Series Single Pole Double Throw (SPDT) 2 Position Half Throw (On - Mom. On) Screw Terminals Locking Lever (Locked In Center Position) Military Part Number MS24658-32E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	1TL1-51E		25			1 $114.69 10 $91.65 100 $79.62 1000 $79.62 10000 $79.62	Buy Now
Newark	1TL1-51E	Bulk			50	1 - 10 - 100 $100.77 1000 $100.77 10000 $100.77	Buy Now
RS	1TL1-51E	Bulk		72 Weeks	50	1 - 10 - 100 $80.22 1000 $80.22 10000 $80.22	Get Quote
Honeywell Sensing and Control 2TL1-51E MICRO SWITCH™ Toggle Switches: TL Series Double Pole Double Throw (DPDT) 2 Position Half Throw (On - Mom. On) Screw Terminals Locking Lever (Locked In Center Position) Military Part Number MS24659-32E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	2TL1-51E		24			1 $74.33 10 $70.96 100 $57.66 1000 $57.66 10000 $57.66	Buy Now
Newark	2TL1-51E	Bulk			50	1 - 10 - 100 $93.57 1000 $93.57 10000 $93.57	Buy Now
RS	2TL1-51E	Bulk		25 Weeks	50	1 - 10 - 100 $98.07 1000 $98.07 10000 $98.07	Get Quote
Powell Electronics	2TL1-51E		16		1	1 $82.07 10 $79.04 100 $77.52 1000 $77.52 10000 $77.52	Buy Now
Thomas & Betts ATL1-516 Type ATL Aluminum One-Hole Lug - Max 35kV - Wire Size 1 Str - 5/16 Inch Bolt Hole - Tin Plated - Die Color Code Gold.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	ATL1-516					1 - 10 $17.33 100 $15.43 1000 $14.44 10000 $14.44	Buy Now

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TL151 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
LM7805ACH-ND Abstract: TL174 tl173 PTVA035002EV V1 Contextual Info: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features	Original	ptva035002ev h-36275-4 a035002 50stances +4lm7805ach-nd tl174 tl173 ptva035002ev v1	PDF
C109 ceramic capacitor Abstract: TL235 Contextual Info: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	ptfb213208fv ptfb213208sv 320-watt h-34275g-6/2 +2c109 ceramic capacitor tl235	PDF
TL272 Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148 Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use	Original	ptma080304m 20-lead pg-dso-20-63 tl272 +9tl184 tl181 tl271 tl308 tl187 transistor tl274 tl293 tl193 tl148	PDF
TL145 Abstract: TL245 transistor c111 C216 TL152 Contextual Info: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	ptfb093608fv h-37275-6/2 tl145 tl245 +3transistor c111 c216 tl152	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	p462-nd p463-nd lng295lfcp2u lng395mftp5u +11us2011 schematic diagram atx power supply 500w pioneer pal 012a 1000w inverter pure sine wave schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 tle 9180 infineon smsc mec 1300 nu tbe schematic diagram inverter 2000w dk55 circuit diagram of luminous 600va ups	PDF
TL139 Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 Contextual Info: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	ptfb183404f 340-watt h-37275-6/2 tl139 +9ptfb183404 ptfb183404ef tl148 transistor tl131 tl162 tl170 tl172 c105 transistor tl145	PDF
ATC100B6R2CT500X Abstract: TL230 TL235 TL156 TL247 C20210 ATC100B100FW500X TL140 TL251 TL126 Contextual Info: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	ptfb213208fv ptfb213208sv 320-watt h-34275g-6/2 +10atc100b6r2ct500x tl230 tl235 tl156 tl247 c20210 atc100b100fw500x tl140 tl251 tl126	PDF
transistor c124 Abstract: TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300 Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use	Original	ptma080304m 20-lead pg-dso-20-63 transistor c124 +9tl184 tl272 tl271 tl181 tl279 tl298 tl168 tl308 tl300	PDF
PFR 215 N Abstract: AM29C111 MPY16 LSP3130 MPY16HJ CY7C516 MPY016 MPY-16HJ Am29CPL152 AM29CPL154 Contextual Info: i 1991 Am29C516A/Am29C517 A 16 x 16-Bit CMOS Parallel Multipliers > 3 to DISTINCTIVE CHARACTERISTICS 45-ns C locked M ultiply A m 29C 516A /A m 29C 517A 35-ns C locked M ulitply (A m 29C 516A -1/A m 29C 517A -1) Low -pow er 1.2 m icron CM OS tech n olo gy	OCR Scan	am29c516a/am29c517 16-bit 45-ns am29c516a/am29c517a +1435-ns am29c516a-1/am29c517a-1 32-bit am29c516a cy7c516 pfr 215 n am29c111 mpy16 lsp3130 mpy16hj mpy016 mpy-16hj am29cpl152 am29cpl154	PDF
TL139 Abstract: TL205 PTFB183404 ptfb183404f transistor TL131 Contextual Info: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications	Original	ptfb183404e ptfb183404f 340-watt h-36275-8 +5h-37275-6/2 tl139 tl205 ptfb183404 transistor tl131	PDF
PTFB093608 Abstract: tl2272 ptfb09360 TL258 TL103 application note PTFB093608FV tl131 TRANSISTOR c104 TL249 TL145 Contextual Info: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	ptfb093608fv h-37275-6/2 ptfb093608 tl2272 +7ptfb09360 tl258 tl103 application note tl131 transistor c104 tl249 tl145	PDF
TL272 Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O Contextual Info: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty	Original	ptfb201402fc h-37248-4 17ubstances tl272 +9tl271 tl274 5228 voltage regulator tl279 tl246 c221 transistor tl-250 tl2741 hd 1077 o	PDF
NEC B1100 Abstract: b1100 nec UPD65031 PD65031 UPD650 MCA600ECL upd65022 UPD65012 upd65051 UPD65006 Contextual Info: ADVANCED . INTERCONNECTIONS « Device To PGA Socket Cross Reference 5 Energy Way, P.O. Box 1019, West Warwick, Rl 02893 . Tel. 4 0 1 -8 23 -52 0 0 • FAX 401-823-8723 Device To PGA Socket Cross Reference Altera Device # Footprint # EP1800 EPM 5128 EPM5192	OCR Scan	ep1800 epm5192 epm5130 b6010 +16b2022 b2023 b2020 hd61811y hd63450y10 hd63450y12 nec b1100 b1100 nec upd65031 pd65031 upd650 mca600ecl upd65022 upd65012 upd65051 upd65006	PDF
220v AC voltage stabilizer schematic diagram Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585	Original	ad9272 p462-nd lng295lfcp2u p463-nd +11lng395mftp5u 220v ac voltage stabilizer schematic diagram lg color tv circuit diagram tda 9370 1000w inverter pure sine wave schematic diagram schematic diagram atx power supply 500w tv sharp ic tda 9381 ps circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor e 13005-2 superpro lx	PDF

TL244 Abstract: CW 7805 LM7805ACH-ND tl173 TL235 TL138 TL251 TL148 TL170 tl134 Contextual Info: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features	Original	ptva035002ev h-36275-4 tl244 cw 7805 +8lm7805ach-nd tl173 tl235 tl138 tl251 tl148 tl170 tl134	PDF
TL250 Abstract: TL239 Contextual Info: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,	Original	ptfb093608fv h-34275g-6/2 tl250 tl239	PDF
hitachi ic 29050 h Abstract: 0/hitachi ic 29050 h semiconductor cross reference Contextual Info: SEMI-CONDUCTOR Cross Reference AMD Device P/N RNP/N Fujitsu P/N RNP/N Intel P/N A M 29030 P G A -1 46C H 3-S B500 PG A -064A H 3-S P 54C A M 29117 P G A -0 68C H 3-S B2000 P G A -135A H 3-S i860 i486 A M 29325 PG A-145AH 3-5 C440H PG A -064A H 3-S AM 29331	OCR Scan	-064a b2000 -135a -145ah +6c440h -120b -169b hitachi ic 29050 h 0/hitachi ic 29050 h semiconductor cross reference	PDF
Contextual Info: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	ptfb183408sv 340-watt	PDF
4871I Contextual Info: PTFB213208SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	ptfb213208sv 320-watt h-37275g-6/2 4871i	PDF
Contextual Info: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz	Original	ptfb213004f 300-watt h-37275-6/2	PDF
VdS 2093 2009 Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114 Contextual Info: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz	Original	ptfb213004f 300-watt h-37275-6/2 vds 2093 2009 +8tl2014 transistor c114 chip transistor c114 diagram tl243 tl145 tl1571 tl1621 transistor c114	PDF
220v AC voltage stabilizer schematic diagram Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122	Original	p390-nd p465-nd p466-nd p467-nd +14lng901cf9 lng992cfbw lng901cfbw lng91lcfbw 220v ac voltage stabilizer schematic diagram ba 49182 rjh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide mosfet, rjh 3077 sc1097 philips ecg semiconductors master replacement guide electronic ballast 40w using 13005 transistor	PDF
atc200b104kw50 Abstract: TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147 Contextual Info: PTFB183404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	ptfb183404f 340-watt atc200b104kw50 tl170 +8tl235 tl138 tl140 tl239 tl141 tl163 tl172 tl147	PDF
Contextual Info: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power ampliier applications in the 920 to 960 MHz frequency band. Features include input and output matching,	Original	ptfb093608fv h-34275g-6/2	PDF

TL151 Search Results

TL151 Price and Stock

Honeywell Sensing and Control 1TL1-51

Honeywell Sensing and Control 2TL1-51

Honeywell Sensing and Control 1TL1-51E

Honeywell Sensing and Control 2TL1-51E

Thomas & Betts ATL1-516

TL151 Datasheets Context Search

LM7805ACH-ND

C109 ceramic capacitor

TL272

TL145

schematic diagram atx Power supply 500w

TL139

ATC100B6R2CT500X

transistor c124

PFR 215 N

TL139

PTFB093608

TL272

NEC B1100

220v AC voltage stabilizer schematic diagram

TL244

TL250

hitachi ic 29050 h

4871I

VdS 2093 2009

220v AC voltage stabilizer schematic diagram

atc200b104kw50