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TL128 Datasheets (1)

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Telefunken Electronic

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TL12800		Telefunken Electronic	Electronic Component Data Book 1976	Scan	PDF	122.3KB	1

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GW Instek GTL-128T Extension cable; free end x2,plug type T; Len: 0.6m
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	GTL-128T				1	1 $168.75 10 $168.75 100 $168.75 1000 $168.75 10000 $168.75	Get Quote
STMicroelectronics STL128D - Rail/Tube (Alt: STL128D)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	STL128D	Tube		45 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics	STL128D				1	1 $1.68 10 $0.80 100 $0.71 1000 $0.56 10000 $0.56	Buy Now
Abracon Corporation O-CEGM-0175Z10-CS-HTL-1.280GHZ - Bulk (Alt: O-CEGM-0175Z10-CS-HTL-1.280GHZ)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	O-CEGM-0175Z10-CS-HTL-1.280GHZ	Bulk		36 Weeks	5	1 - 10 $7162.16 100 $6625.00 1000 $6625.00 10000 $6625.00	Buy Now
Braemac Americas-Symmetry	O-CEGM-0175Z10-CS-HTL-1.280GHZ				1	1 $6625.00 10 $6625.00 100 $6625.00 1000 $6625.00 10000 $6625.00	Buy Now
TE Connectivity BTL1-28-14-1-B-SB Circular MIL Spec Backshells BTL1-28-14-1-B-SB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	BTL1-28-14-1-B-SB					1 - 10 - 100 $190.60 1000 $190.60 10000 $190.60	Get Quote
STMicroelectronics STL128DFP Trans GP BJT NPN 400V 4A 30000mW 3-Pin(3+Tab) TO-220FP Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	STL128DFP		987			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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TL128 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TL205 Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147 Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's	Original	ptfc260202fc 10-watt h-37248-4 tl205 +8tl2322 ro4350 tl233 tl241 587-1818-2-nd c201 017 c202 tl147	PDF
transistor TL131 Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	ptfb212507sh 200-watt h-34288g-4/2 transistor tl131 +8tl231 tl127 tl130 tl131 transistor tl120 8c802 tl-130 lm78l05acmnd	PDF
tl249 Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242 Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	ptfb182503el ptfb182503fl 240-watt h-33288-6 +10h-34288-6 tl249 tl2472 tl244 transistor tl131 tl251 tl239 ptfb182503 tl250 tl242	PDF
Contextual Info: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.	Original	ptfa091503el 150-watt h-33288-6	PDF
LM7805ACH-ND Abstract: TL174 tl173 PTVA035002EV V1 Contextual Info: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features	Original	ptva035002ev h-36275-4 a035002 50stances +4lm7805ach-nd tl174 tl173 ptva035002ev v1	PDF
C109 ceramic capacitor Abstract: TL235 Contextual Info: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	ptfb213208fv ptfb213208sv 320-watt h-34275g-6/2 +2c109 ceramic capacitor tl235	PDF
PTFB212507SH Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	ptfb212507sh 200-watt	PDF
TRANSISTOR tl131 Abstract: tl239 Contextual Info: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include	Original	ptfb082817fh h-34288-4/2 transistor tl131 tl239	PDF
C205 Contextual Info: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications	Original	ptfb191501e ptfb191501f 150-watt h-36248-2 +2h-37248-2 c205	PDF
PTFB090901EA Contextual Info: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced	Original	ptfb090901ea ptfb090901fa 90-watt h-37265-2	PDF
TL272 Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148 Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use	Original	ptma080304m 20-lead pg-dso-20-63 tl272 +9tl184 tl181 tl271 tl308 tl187 transistor tl274 tl293 tl193 tl148	PDF
PTFB090901 Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801 Contextual Info: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	ptfb090901ea ptfb090901fa 90-watt h-36265-2 +9h-37265-2 ptfb090901 tl127 569w 100b4r7bw500x pcc104bctnd pcc104bct-nd transistor c104 transistor c801	PDF
TL145 Abstract: TL245 transistor c111 C216 TL152 Contextual Info: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	ptfb093608fv h-37275-6/2 tl145 tl245 +3transistor c111 c216 tl152	PDF
TRANSISTOR tl131 Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117 Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications	Original	ptfb182503el ptfb182503fl 240-watt transistor tl131 +8ptfb192503 tl134 tl105b tl231 ptfb192503el v1 c103 transistor ro4350 tl117	PDF

schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	p462-nd p463-nd lng295lfcp2u lng395mftp5u +11us2011 schematic diagram atx power supply 500w pioneer pal 012a 1000w inverter pure sine wave schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 tle 9180 infineon smsc mec 1300 nu tbe schematic diagram inverter 2000w dk55 circuit diagram of luminous 600va ups	PDF
PTFB090901EA Contextual Info: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	ptfb090901ea ptfb090901fa 90-watt h-37265-2	PDF
TL139 Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 Contextual Info: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	ptfb183404f 340-watt h-37275-6/2 tl139 +9ptfb183404 ptfb183404ef tl148 transistor tl131 tl162 tl170 tl172 c105 transistor tl145	PDF
PTFB192503EL Abstract: ATC100A8R2BW150XB c103 TRANSISTOR tl131 TRANSISTOR c104 C802 C803 R250 587-1818-2-ND TL231 Contextual Info: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	ptfb192503el ptfb192503fl 240-watt h-33288-6 +10h-34288-4/2 atc100a8r2bw150xb c103 transistor tl131 transistor c104 c802 c803 r250 587-1818-2-nd tl231	PDF
PTFB192503EL V1 Contextual Info: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier	Original	ptfb192503el ptfb192503fl 240-watt h-33288-6 +2h-34288-4/2 ptfb192503el v1	PDF
TL107 linear Abstract: TRANSISTOR tl131 Contextual Info: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET speciically designed for use in Doherty cellular power ampliier applications in the 1805	Original	ptfb182557sh 250-watt h-34288g-4/2 tl107 linear +1transistor tl131	PDF
PTFB212503FL Contextual Info: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power	Original	ptfb212503el ptfb212503fl 240-watt h-33288-6 +1h-34288-4/2	PDF
TRANSISTOR tl131 Contextual Info: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include	Original	ptfb211501e ptfb211501f 150-watt h-36248-2 +2h-37248-2 transistor tl131	PDF
Contextual Info: PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications in the 1805 to 1880 MHz frequency band. Features include input	Original	ptfb182503el ptfb182503fl 240-watt h-33288-6 +1h-34288-4/2	PDF
Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's	Original	ptfc260202fc 10-watt h-37248-4	PDF

TL128 Search Results

TL128 Datasheets (1)

TL128 Price and Stock

GW Instek GTL-128T

STMicroelectronics STL128D

Abracon Corporation O-CEGM-0175Z10-CS-HTL-1.280GHZ

TE Connectivity BTL1-28-14-1-B-SB

STMicroelectronics STL128DFP

TL128 Datasheets Context Search

TL205

transistor TL131

tl249

LM7805ACH-ND

C109 ceramic capacitor

PTFB212507SH

TRANSISTOR tl131

C205

PTFB090901EA

TL272

PTFB090901

TL145

TRANSISTOR tl131

schematic diagram atx Power supply 500w

PTFB090901EA

TL139

PTFB192503EL

PTFB192503EL V1

TL107 linear

PTFB212503FL

TRANSISTOR tl131