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    TK10A Search Results

    TK10A Datasheets (20)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TK10A50D
    Toshiba Japanese - Transistors - Mosfets Original PDF 268.85KB 6
    TK10A50D
    Toshiba Transistors - Mosfets Original PDF 196.98KB 6
    TK10A50D(STA4,Q,M)
    Toshiba TK10A50D - Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220SIS Original PDF 197.01KB 6
    TK10A50W,S5X
    Toshiba America Electronic Components X35 PB-F POWER MOSFET TRANSISTOR Original PDF 257.26KB
    TK10A55D(STA4,Q,M)
    Toshiba TK10A55D - Trans MOSFET N-CH 550V 10A 3-Pin(3+Tab) TO-220SIS Original PDF 189.33KB 6
    TK10A60D
    Toshiba Japanese - Transistors - Mosfets Original PDF 269.54KB 6
    TK10A60D
    Toshiba Transistors - Mosfets Original PDF 186.03KB 6
    TK10A60D(Q)
    Toshiba TK10A60D - Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220SIS Original PDF 186.05KB 6
    TK10A60D(Q,M)
    Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 10A TO220SIS Original PDF 6
    TK10A60D(STA4,Q,M)
    Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 10A TO220SIS Original PDF 6
    TK10A60E,S4X
    Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V TO220SIS Original PDF 239.42KB
    TK10A60E,S5X
    Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V TO220SIS Original PDF 9
    TK10A60W
    Toshiba TK10A60 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF 246.55KB 10
    TK10A60W
    Toshiba Japanese - Transistors - Mosfets Original PDF 348.58KB 11
    TK10A60W
    Toshiba Transistors - Mosfets Original PDF 246.53KB 10
    TK10A60W,S4X
    Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N CH 600V 9.7A TO-220 Original PDF 245.65KB
    TK10A60W5,S5VX
    Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 9.7A TO-220SIS Original PDF 242.16KB
    TK10A60W,S4VX
    Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 9.7A TO-220SIS Original PDF 10
    TK10A80E,S4X
    Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V TO220SIS Original PDF 9
    TK10A80W,S4X
    Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 9.5A TO220SIS Original PDF 416.51KB
    SF Impression Pixel

    TK10A Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components TK10A60W5,S5VX(M

    Transistor: N-MOSFET; unipolar; 600V; 9.7A; 30W; SC67
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    Newark TK10A60W5,S5VX(M Bulk 723 1
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    Toshiba America Electronic Components TK10A80W,S4X(S

    Transistor: N-MOSFET; unipolar; 800V; 9.5A; 40W; SC67
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    TME TK10A80W,S4X(S 1 1
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    Newark TK10A80W,S4X(S Bulk 4 1
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    Quest Components TK10A80W,S4X(S 8
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    Toshiba America Electronic Components TK10A60W,S4VX(M

    Transistor: N-MOSFET; unipolar; 600V; 9.7A; 30W; SC67
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    TME () TK10A60W,S4VX(M 850
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    TK10A60W,S4VX(M 1
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    Verical TK10A60W,S4VX(M 30 3
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    Arrow Electronics TK10A60W,S4VX(M 30 1
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    Newark TK10A60W,S4VX(M Bulk 1,515 1
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    Avnet Asia TK10A60W,S4VX(M 28 Weeks 2,500
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    EBV Elektronik TK10A60W,S4VX(M 400 23 Weeks 50
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    Toshiba America Electronic Components TK10A80E,S4X(S

    Trans MOSFET N-CH Si 800V 10A 3-Pin(3+Tab) TO-220SIS Tube
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    Verical TK10A80E,S4X(S 40 3
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    Newark TK10A80E,S4X(S Bulk 613 1
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    Avnet Asia TK10A80E,S4X(S 28 Weeks 1,000
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    EBV Elektronik TK10A80E,S4X(S 19 Weeks 50
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    Toshiba America Electronic Components TK10A60W,S4VX

    Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Magazine
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    Verical TK10A60W,S4VX 7 5
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    Avnet Americas TK10A60W,S4VX Tube 24 Weeks 1
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    Mouser Electronics TK10A60W,S4VX
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    Vyrian TK10A60W,S4VX 11,895
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    TK10A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K10A50D

    Abstract: K10A50 TK10A50D VDD400 K*A50D toshiba K10A50D
    Contextual Info: TK10A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK10A50D ○ スイッチングレギュレータ用 単位: mm z : RDS (ON) = 0.62 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 5.0 S (標準)


    Original
    tk10a50dsc-672-10u1b20070701-ja+5k10a50dk10a50vdd400k*a50dtoshiba k10a50d PDF

    Contextual Info: TK10A60W5 MOSFETs Silicon N-Channel MOS DTMOS TK10A60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 85 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Structure : DTMOS


    Original
    tk10a60w5o-220sis PDF

    k10a60d

    Contextual Info: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS VII TK10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original
    tk10a60dk10a60d PDF

    k10a60d

    Abstract: toshiba K10A60D transistor K10A60D K10A60 TK10A60D 20/equivalent for k10a60d
    Contextual Info: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62Ω (typ.) High forward transfer admittance: |Yfs| = 6.0S (typ.)


    Original
    tk10a60dk10a60dtoshiba k10a60dtransistor k10a60d+2k10a6020/equivalent for k10a60d PDF

    TK10A60D5

    Abstract: TK10A60D
    Contextual Info: TK10A60D5 MOSFETs Silicon N-Channel MOS π-MOS TK10A60D5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trrf = 50 ns (typ.), trr = 90 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.8 Ω (typ.)


    Original
    tk10a60d5o-220sistk10a60d PDF

    TK10A60D5

    Abstract: 600VTH TK10A60D
    Contextual Info: TK10A60D5 MOSFET シリコンNチャネルMOS形 π-MOS TK10A60D5 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) 逆回復時間が早い。: trrf = 50 ns (標準), trr = 90 ns (標準) (2) オン抵抗が低い。: RDS(ON) = 0.8 Ω (標準)


    Original
    tk10a60d5o-220sissc-672-10u1s+2600vthtk10a60d PDF

    K10A50D

    Abstract: K10A50 TK10A50D K*A50D
    Contextual Info: TK10A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK10A50D ○ スイッチングレギュレータ用 単位: mm z : RDS (ON) = 0.62 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 5.0 S (標準)


    Original
    tk10a50dsc-672-10u1bk10a50d+2k10a50k*a50d PDF

    Contextual Info: TK10A80E MOSFETs Silicon N-Channel MOS π-MOS TK10A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA)


    Original
    tk10a80eo-220sis PDF

    k10a60d

    Abstract: K10A60 TK10A60D equivalent for k10a60d toshiba K10A60D
    Contextual Info: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original
    tk10a60dk10a60dk10a60equivalent for k10a60d+1toshiba k10a60d PDF

    Contextual Info: TK10A60W MOSFETs Silicon N-Channel MOS DTMOS TK10A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)


    Original
    tk10a60wo-220sis PDF

    k10a60d

    Abstract: TK10A60D K10A60 VDD400 equivalent for k10a60d k10a IAR10
    Contextual Info: TK10A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ TK10A60D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.58 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)


    Original
    tk10a60dsc-672-10u1bk10a60d+5k10a60vdd400equivalent for k10a60dk10aiar10 PDF

    Contextual Info: TK10A60W MOSFET シリコンNチャネルMOS形 DTMOS TK10A60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.327 Ω (標準) (2)


    Original
    tk10a60wo-220sis PDF

    Contextual Info: TK10A80E MOSFETs Silicon N-Channel MOS π-MOS TK10A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA)


    Original
    tk10a80eo-220sis PDF

    K10A60

    Abstract: k10a60d TK10A60D equivalent for k10a60d tk10a60d equivalent toshiba K10A60D TK10A60 transistor K10A60D k10a TC200
    Contextual Info: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original
    tk10a60dk10a60k10a60dequivalent for k10a60d+6tk10a60d equivalenttoshiba k10a60dtk10a60transistor k10a60dk10atc200 PDF

    k10a60d

    Contextual Info: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original
    tk10a60dk10a60d PDF

    toshiba K10A50D

    Abstract: k10a50d toshiba marking code transistor k10a50d transistor K10a50d k10a50d data TK10A50D K10A50 K10a50d Transistor K*A50D k10a
    Contextual Info: TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original
    tk10a50dtoshiba k10a50dk10a50dtoshiba marking code transistor k10a50d+6transistor k10a50dk10a50d datak10a50k10a50d transistork*a50dk10a PDF

    k10a60d

    Abstract: K10A60 tk10a60d VDD400 equivalent for k10a60d MJ500
    Contextual Info: TK10A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ TK10A60D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.62 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)


    Original
    tk10a60dsc-672-10u1b20070701-ja+5k10a60dk10a60vdd400equivalent for k10a60dmj500 PDF

    K10A5

    Abstract: K10A55D
    Contextual Info: TK10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original
    tk10a55dk10a5k10a55d PDF

    TK10A60E

    Abstract: tk10a60
    Contextual Info: TK10A60E MOSFETs Silicon N-Channel MOS π-MOS TK10A60E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (3)


    Original
    tk10a60eo-220sistk10a60 PDF

    k10a50d

    Contextual Info: TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original
    tk10a50dk10a50d PDF

    K10A50

    Abstract: K10A50D toshiba marking code transistor k10a50d
    Contextual Info: TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original
    tk10a50dk10a50k10a50dtoshiba marking code transistor k10a50d PDF

    Contextual Info: TK10A60W MOSFETs Silicon N-Channel MOS DTMOS TK10A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original
    tk10a60wo-220sis PDF

    K10A50

    Abstract: K10A50D toshiba K10A50D toshiba marking code transistor k10a50d K*A50D TK10A50D k10a50d data transistor K10a50d k10a *K10A50D
    Contextual Info: TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original
    tk10a50dk10a50k10a50dtoshiba k10a50d+5toshiba marking code transistor k10a50dk*a50dk10a50d datatransistor k10a50dk10a PDF

    Contextual Info: TK10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original
    tk10a55d PDF