TK10A Search Results
TK10A Datasheets (20)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| TK10A50D | Toshiba | Japanese - Transistors - Mosfets | Original | 268.85KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A50D | Toshiba | Transistors - Mosfets | Original | 196.98KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A50D(STA4,Q,M) | Toshiba | TK10A50D - Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220SIS | Original | 197.01KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A50W,S5X | Toshiba America Electronic Components | X35 PB-F POWER MOSFET TRANSISTOR | Original | 257.26KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A55D(STA4,Q,M) | Toshiba | TK10A55D - Trans MOSFET N-CH 550V 10A 3-Pin(3+Tab) TO-220SIS | Original | 189.33KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A60D | Toshiba | Japanese - Transistors - Mosfets | Original | 269.54KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A60D | Toshiba | Transistors - Mosfets | Original | 186.03KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A60D(Q) | Toshiba | TK10A60D - Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220SIS | Original | 186.05KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A60D(Q,M) | Toshiba | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 10A TO220SIS | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A60D(STA4,Q,M) | Toshiba | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 10A TO220SIS | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A60E,S4X | Toshiba Semiconductor and Storage | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V TO220SIS | Original | 239.42KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A60E,S5X | Toshiba | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V TO220SIS | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A60W | Toshiba | TK10A60 - TRANSISTOR POWER, FET, FET General Purpose Power | Original | 246.55KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A60W | Toshiba | Japanese - Transistors - Mosfets | Original | 348.58KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A60W | Toshiba | Transistors - Mosfets | Original | 246.53KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A60W,S4X | Toshiba Semiconductor and Storage | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N CH 600V 9.7A TO-220 | Original | 245.65KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A60W5,S5VX | Toshiba Semiconductor and Storage | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 9.7A TO-220SIS | Original | 242.16KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A60W,S4VX | Toshiba | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 9.7A TO-220SIS | Original | 10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A80E,S4X | Toshiba | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V TO220SIS | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A80W,S4X | Toshiba Semiconductor and Storage | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 9.5A TO220SIS | Original | 416.51KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK10A Price and Stock
Toshiba America Electronic Components TK10A60W5,S5VX(MTransistor: N-MOSFET; unipolar; 600V; 9.7A; 30W; SC67 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TK10A60W5,S5VX(M | 696 | 1 |
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TK10A60W5,S5VX(M | 6 | 3 |
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TK10A60W5,S5VX(M | 6 | 1 |
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TK10A60W5,S5VX(M | Bulk | 723 | 1 |
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TK10A60W5,S5VX(M | 23 Weeks | 50 |
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Toshiba America Electronic Components TK10A80W,S4X(STransistor: N-MOSFET; unipolar; 800V; 9.5A; 40W; SC67 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TK10A80W,S4X(S | 1 | 1 |
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TK10A80W,S4X(S | Bulk | 4 | 1 |
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TK10A80W,S4X(S | 8 |
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TK10A80W,S4X(S | 23 Weeks | 50 |
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Toshiba America Electronic Components TK10A60W,S4VX(MTransistor: N-MOSFET; unipolar; 600V; 9.7A; 30W; SC67 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TK10A60W,S4VX(M | 850 |
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| TK10A60W,S4VX(M | 1 |
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TK10A60W,S4VX(M | 30 | 3 |
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TK10A60W,S4VX(M | 30 | 1 |
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TK10A60W,S4VX(M | Bulk | 1,515 | 1 |
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TK10A60W,S4VX(M | 28 Weeks | 2,500 |
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TK10A60W,S4VX(M | 400 | 23 Weeks | 50 |
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Toshiba America Electronic Components TK10A80E,S4X(STrans MOSFET N-CH Si 800V 10A 3-Pin(3+Tab) TO-220SIS Tube |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TK10A80E,S4X(S | 40 | 3 |
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TK10A80E,S4X(S | 40 | 1 |
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TK10A80E,S4X(S | Bulk | 613 | 1 |
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TK10A80E,S4X(S | 28 Weeks | 1,000 |
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TK10A80E,S4X(S | 19 Weeks | 50 |
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Toshiba America Electronic Components TK10A60W,S4VXTrans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Magazine |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TK10A60W,S4VX | 7 | 5 |
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TK10A60W,S4VX | Tube | 24 Weeks | 1 |
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TK10A60W,S4VX |
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TK10A60W,S4VX | 7 | 1 |
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TK10A60W,S4VX | 11,895 |
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TK10A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
K10A50D
Abstract: K10A50 TK10A50D VDD400 K*A50D toshiba K10A50D
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tk10a50dsc-672-10u1b20070701-ja+5 | |
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Contextual Info: TK10A60W5 MOSFETs Silicon N-Channel MOS DTMOS TK10A60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 85 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Structure : DTMOS |
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tk10a60w5o-220sis | |
k10a60dContextual Info: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS VII TK10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) |
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tk10a60dk10a60d | |
k10a60d
Abstract: toshiba K10A60D transistor K10A60D K10A60 TK10A60D 20/equivalent for k10a60d
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tk10a60dk10a60dtoshiba k10a60dtransistor k10a60d+2 | |
TK10A60D5
Abstract: TK10A60D
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tk10a60d5o-220sistk10a60d | |
TK10A60D5
Abstract: 600VTH TK10A60D
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tk10a60d5o-220sissc-672-10u1s+2 | |
K10A50D
Abstract: K10A50 TK10A50D K*A50D
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tk10a50dsc-672-10u1bk10a50d+2 | |
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Contextual Info: TK10A80E MOSFETs Silicon N-Channel MOS π-MOS TK10A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) |
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tk10a80eo-220sis | |
k10a60d
Abstract: K10A60 TK10A60D equivalent for k10a60d toshiba K10A60D
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tk10a60dk10a60dk10a60equivalent for k10a60d+1 | |
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Contextual Info: TK10A60W MOSFETs Silicon N-Channel MOS DTMOS TK10A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) |
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tk10a60wo-220sis | |
k10a60d
Abstract: TK10A60D K10A60 VDD400 equivalent for k10a60d k10a IAR10
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tk10a60dsc-672-10u1bk10a60d+5 | |
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Contextual Info: TK10A60W MOSFET シリコンNチャネルMOS形 DTMOS TK10A60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.327 Ω (標準) (2) |
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tk10a60wo-220sis | |
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Contextual Info: TK10A80E MOSFETs Silicon N-Channel MOS π-MOS TK10A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) |
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tk10a80eo-220sis | |
K10A60
Abstract: k10a60d TK10A60D equivalent for k10a60d tk10a60d equivalent toshiba K10A60D TK10A60 transistor K10A60D k10a TC200
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tk10a60dk10a60k10a60dequivalent for k10a60d+6 | |
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k10a60dContextual Info: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) |
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tk10a60dk10a60d | |
toshiba K10A50D
Abstract: k10a50d toshiba marking code transistor k10a50d transistor K10a50d k10a50d data TK10A50D K10A50 K10a50d Transistor K*A50D k10a
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tk10a50dtoshiba k10a50dk10a50dtoshiba marking code transistor k10a50d+6 | |
k10a60d
Abstract: K10A60 tk10a60d VDD400 equivalent for k10a60d MJ500
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tk10a60dsc-672-10u1b20070701-ja+5 | |
K10A5
Abstract: K10A55D
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tk10a55dk10a5k10a55d | |
TK10A60E
Abstract: tk10a60
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tk10a60eo-220sistk10a60 | |
k10a50dContextual Info: TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.) |
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tk10a50dk10a50d | |
K10A50
Abstract: K10A50D toshiba marking code transistor k10a50d
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tk10a50dk10a50k10a50dtoshiba marking code transistor k10a50d | |
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Contextual Info: TK10A60W MOSFETs Silicon N-Channel MOS DTMOS TK10A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching |
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tk10a60wo-220sis | |
K10A50
Abstract: K10A50D toshiba K10A50D toshiba marking code transistor k10a50d K*A50D TK10A50D k10a50d data transistor K10a50d k10a *K10A50D
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tk10a50dk10a50k10a50dtoshiba k10a50d+5 | |
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Contextual Info: TK10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) |
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tk10a55d | |