TK10A80E Search Results

TK10A80E Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TK10A80E,S4X		Toshiba	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V TO220SIS	Original	PDF		9

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Toshiba America Electronic Components


Toshiba America Electronic Components TK10A80E,S4X MOSFET N-CH 800V 10A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK10A80E,S4X	Tube			1	1 $3.68 10 $3.68 100 $1.87 1000 $1.24 10000 $1.21	Buy Now
Avnet Americas	TK10A80E,S4X	Tube		16 Weeks	50	1 - 10 - 100 $1.84 1000 $1.21 10000 $1.21	Buy Now
Mouser Electronics	TK10A80E,S4X		103			1 $3.75 10 $2.18 100 $1.91 1000 $1.21 10000 $1.21	Buy Now
Vyrian	TK10A80E,S4X		112			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TK10A80E,S4X(S Trans MOSFET N-CH Si 800V 10A 3-Pin(3+Tab) TO-220SIS Tube
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Verical	TK10A80E,S4X(S		35		35	1 - 10 - 100 $2.15 1000 $2.15 10000 $2.15	Buy Now
Newark	TK10A80E,S4X(S	Bulk	653		1	1 $0.83 10 $0.83 100 $0.83 1000 $0.83 10000 $0.83	Buy Now
Avnet Asia	TK10A80E,S4X(S		5,000	24 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	TK10A80E,S4X(S			19 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components TK10A80ES4X SILICON N-CHANNEL (PI-MOSVIII) MOSFET Power Field-Effect Transistor
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ComSIT USA	TK10A80ES4X		200			1 - 10 - 100 - 1000 - 10000 -	Get Quote

TK10A80E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TK10A80E MOSFETs Silicon N-Channel MOS π-MOS TK10A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA)	Original	TK10A80E O-220SIS	PDF
Contextual Info: TK10A80E MOSFETs Silicon N-Channel MOS π-MOS TK10A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA)	Original	TK10A80E O-220SIS	PDF
Contextual Info: TK10A80E MOSFETs Silicon N-Channel MOS π-MOS TK10A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA)	Original	TK10A80E O-220SIS	PDF
gt50jr22 Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W Contextual Info: System Catalog May 2014 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g –2 Types and Applications of Switching Power Supplies Types of DC-DC converters embedded in various	Original	SCE0024G gt50jr22 fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W	PDF