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TK10A80E Datasheets (1)

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Toshiba

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TK10A80E,S4X		Toshiba	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V TO220SIS	Original	PDF		9

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Toshiba America Electronic Components


Toshiba America Electronic Components TK10A80E,S4X(S Trans MOSFET N-CH Si 800V 10A 3-Pin(3+Tab) TO-220SIS Tube
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Verical	TK10A80E,S4X(S		40		3	1 - 10 $2.07 100 $2.07 1000 $2.07 10000 $2.07	Buy Now
Arrow Electronics	TK10A80E,S4X(S		40		1	1 $2.07 10 $2.07 100 $2.07 1000 $2.07 10000 $2.07	Search Findchips
Newark	TK10A80E,S4X(S	Bulk	613		1	1 $2.01 10 $1.76 100 $1.48 1000 $1.28 10000 $1.09	Buy Now
Avnet Asia	TK10A80E,S4X(S			28 Weeks	1,000	1 - 10 - 100 - 1000 $1.09 10000 $1.02	Buy Now
EBV Elektronik	TK10A80E,S4X(S			19 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TK10A80E,S4X - Rail/Tube (Alt: TK10A80E,S4X)
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Avnet Americas	TK10A80E,S4X	Tube		16 Weeks	50	1 - 10 - 100 $1.13 1000 $0.96 10000 $0.96	Buy Now
Vyrian	TK10A80E,S4X		800			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TK10A80ES4X SILICON N-CHANNEL (PI-MOSVIII) MOSFET Power Field-Effect Transistor
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ComSIT USA	TK10A80ES4X		200			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TK10A80E
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Win Source Electronics	TK10A80E		10,000			1 - 10 - 100 $0.84 1000 $0.56 10000 $0.56	Buy Now

TK10A80E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TK10A80E MOSFETs Silicon N-Channel MOS π-MOS TK10A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA)	Original	tk10a80e o-220sis	PDF
Contextual Info: TK10A80E MOSFETs Silicon N-Channel MOS π-MOS TK10A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA)	Original	tk10a80e o-220sis	PDF
Contextual Info: TK10A80E MOSFETs Silicon N-Channel MOS π-MOS TK10A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA)	Original	tk10a80e o-220sis	PDF
gt50jr22 Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W Contextual Info: System Catalog May 2014 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g –2 Types and Applications of Switching Power Supplies Types of DC-DC converters embedded in various	Original	sce0024g gt50jr22 fast tlp785 toshiba bipolar power transistor +5tk10a65d tlp152 tlp293 tph1400anh tk8p65w	PDF