TIP147 TO247 Search Results

Contextual Info: TIP142, TIP147 Complementary power Darlington transistors Datasheet — production data Features • Monolithic Darlington configuration ■ Integrated antiparallel collector-emitter diode Applications ■ 1 Linear and switching industrial equipment 3 TO-247

4132

Abstract: tip142 TIP147 morocco tip147 TIP142 TIP147 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 rev8 TIP142 morocco
Contextual Info: TIP142, TIP147 Complementary power Darlington transistors Datasheet — production data Features • Monolithic Darlington configuration ■ Integrated antiparallel collector-emitter diode Applications 2 ■ Linear and switching industrial equipment TO-247

4132

Abstract: tip142/TIP142 TIP142 TIP147
Contextual Info: TIP142 TIP147 Complementary power Darlington transistors Features • Monolithic Darlington configuration ■ Integrated antiparallel collector-emitter diode Applications ■ 2 Linear and switching industrial equipment Description TO-247 The devices are manufactured in planar

tip142/TIP147 AMPLIFIER CIRCUIT

Abstract: TIP142 TIP140 TIP147 tip142 tip147 darlington TIP142 power amplifier tip147 transistor tip142,tip147 amplifier circuits TIP145 TIP141
Contextual Info: TIP140 to TIP142 & TIP145 to TIP147 Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications. • Collector-Emitter sustaining voltage VCEO sus = 60V (Minimum) - TIP140, TIP145 = 80V (Minimum) - TIP141, TIP146

TIP147

Abstract: TIP142 TIP142 TIP147 TIP147 to247 tip147 transistor transistor TIP142 to-247 transistor tip142 JESD97
Contextual Info: TIP142 TIP147 Complementary power Darlington transistors Features . • Monolithic Darlington configuration ■ Integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment 3 2 Description 1 The TIP142 is an Epitaxial-base NPN power

TIP147 morocco

Abstract: TIP142 TIP147 tip142 tip147 TIP142 MOROCCO tip142/TIP142 JESD97 TIP147 to247 transistor TIP142 to-247
Contextual Info: TIP142 TIP147 Complementary power Darlington transistors Features . • Monolithic Darlington configuration ■ Integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment 3 2 Description 1 The TIP142 is an Epitaxial-base NPN power

TIPI42

Abstract: TIP1411 TIP142 TIP147 TIP140 TIP141 TIP142 TIP145 TIP146 TIP147 TIPI47
Contextual Info: ÆàMOS PEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageVCeo sus = 60 V (Min) - TIP140.TIP145 = 80 V (Min) - TIP141.TIP146

tip142/TIP147 AMPLIFIER CIRCUIT

Abstract: BDV65, BDV64 TIP36C to-247 BDW83C TIP147 tip147 data sheet TIP2955 TIP35C BDV65A BDV65B
Contextual Info: Power Transistors TO-218 Case* Continued General Purpose Amplifier TYPE NO. IC PD (A) (W) BVCBO BVCEO hFE @ IC @ VCE VCE(SAT) @ IC (V) (V) MIN MIN MIN MAX 125 60 60 1,000 - 5.0 4.0 2.0 5.0 60* 12 125 80 80 1,000 - 5.0 4.0 2.0 5.0 60* BDV64B 12 125 100

BDV65, BDV64

Abstract: TIP-1 tip142 BDV64 TIP3055 DARLINGTON TRANSISTORS
Contextual Info: Power Transistors TO-218Case* Continued General Purpose Amplifier TYPE NO. *C (A) Pd (W) BV c b o (V) h FE BVCEO (V) @ lC (A) @ V(je VCE(SA T) @ lc h (MHz) (V) (V) (A) «Typ NPN PNP BDV65 BDV64 12 BDV65A BDV64A BDV65B MIN MIN MIN MAX MAX 125 60 60 1,000

tip142/TIP147 AMPLIFIER CIRCUIT

Abstract: tip141 equivalent TIP35C EQUIVALENT BDV65, BDV64 BDV65 TIP35C BDV65A BDV65B BDW83A BDW83B
Contextual Info: Power Transistors TO-218 Case* Continued General Purpose Amplifier TYPE NO. IC PD (A) (W) BVCBO BVCEO hFE @ IC @ VCE VCE(SAT) @ IC (V) (V) MIN MIN MIN MAX 125 60 60 1,000 - 5.0 4.0 2.0 5.0 60* 12 125 80 80 1,000 - 5.0 4.0 2.0 5.0 60* BDV64B 12 125 100

BOW84C

Abstract: BOW83B
Contextual Info: Power Transistors TO-218 Case* Continued f f General Purpose Amplifier TYPE NO. Pd (W) *C (A) BV c b O 00 h FE b v CEO (V) @«C (A) v CE VCE(SA T)@ »C <T (MHz) (V) (V) (A) «Typ NPN PNP BDV65 BDV64 12 BDV65A BDV64A BDV65B MIN MIN MIN MAX 125 60 60 1,000

tip142/TIP3055

Abstract: BDV64 BDV64A BDV64B BDV65 BDV65A BDV65B BDW83A BDW83B BDW83C
Contextual Info: Pow er Transistors TO-218Case* Continued General Purpose Amplifier TYPE NO. *C (A) Pd (W) BV c b o (V) @ lC @ V( je VCE(SA T) @ lc (MHz) (A) (V) (V) (A) h h FE BVCEO (V) *TYP NPN PNP BDV65 BDV64 12 BDV65A BDV64A 12 125 80 BDV65B BDV64B 12 125 BDW83A BDW84A

TIP53

Contextual Info: Power Transistors TO-218 Case* NPN High Voltage Switching TYPE NO. *C A Pd (W) bvcbo bvceo (V) (V) VCE(S/ T) @ 1C (V) (A) MIN MIN MAX @ IB *off *T (mA) (MS) (MHz) *TYP *TYP MAX MIN 2N6931 10 150 350 300 1.0 10 2,000 3.0 . 2N6932 10 150 450 400 1.0

TIP36C to-247

Abstract: tip51 BDW83C
Contextual Info: Pow er T ran sisto rs Q TO-218 Case* NPN High Voltage Switching TYPE NO. •c A Pd (W) B V cB O BV c e o (V) (V) VCE(SA T ) @ I C (V) MIN MIN MAX @Ib (mA) (A) toff (US) (MHz) +TYP +TYP MAX MIN 2N6931* 10 150 350 300 1.0 10 2,000 3.0 . 2N6932* 10 150

box54c

Abstract: BOX34C b0336 BOW84C B0650 2SB1100K 2SB1098L BOW24C 2SB1099 2SB897
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) PD Max (W) fT hFE Min Max (Hz) leBO Max (A) t, Max tf Max (s) (s) TOper Max (Oe) Package Style PNP Darlington Transistors, (Co nt' d) 5 10 B0262B B0262B B0682 2SB1098M 2SB1098L

BUV48A

Abstract: TIP35CW failure report IGBT B505 BDW83C BU941ZP TIP142 TIP2955 TIP34C tip35
Contextual Info: PRODUCT/PROCESS CHANGE NOTIFICATION PCN APM-PWR/07/2362 Notification Date 03/19/2007 Package change from TO218 to TO247 for Power Bipolar products PWR - PWR BIP/ IGBT/ RF 1/14 PCN APM-PWR/07/2362 - Notification Date 03/19/2007 Table 1. Change Identification

BZX85C12V

Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Contextual Info: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes

BUX98PI

Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI
Contextual Info: April Ô99 DEVICE TYPE NPN PNP 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490

BU808DFH

Abstract: ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH
Contextual Info: Power Bipolar Transistors Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions P/N NPN PNP STX112 STBV68 STBV45 STBV42 STBV32 STX13003 100 400 400 400 400 400 P/N NPN PNP BSS44 BFX34 2N5153 2N5681 2N5682 2N5415 BUY49S 2N3440 2N5416

ST1803DFP

Abstract: BUX98PI BU808DFI equivalent BUV48FI electronic balast ST1803DHI equivalent st2001hi SOT93 package BUX48A ST2310HI equivalent
Contextual Info: Selection guide April 2000 SOT-32 / TO-126 Device Type NPN PNP BD433 BD435 MJE521 BD135 BD437 BD235 BD439 2N5191 BD677 BD677A 2N4923 BD139 BD139-10 BD179 BD441 2N5192 2N6039 BD679 BD679A MJE802 BD237 MJE182 BD681 MJE3440 MJE340 2N5657 ST13003 BULT118 BULT118D

ssp11n60s5

Abstract: SSP11n60 STW5N150 SVT6251 STI3005 ST4N150 STI-3007 A STP8N90 SVT6060 SVT300-5
Contextual Info: STI Type: SSP11N60S5 Notes: Breakdown Voltage: Continuous Current: RDS on Ohm: Trans Conductance Mhos: Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: Polarity:

BUL310P

Abstract: smps 100w half bridge BUW89 complementary BUR52 to-39 transistors BUTW92 bd707 application BU508DFI BUH315D BUH515
Contextual Info: TRANSISTORS POWER BIPOLAR HORIZONTAL DEFLECTION TYPICAL APPLICATION Device BU808DFI BUH315 BUH315D THD218DHI BU508AFI BU508DFI BUH515 BUH515D S2000AFI THD277HI BUH615D THD215HI THD200FI BUH1015HI BUH1015 BUH1215 BUH2M20AP VCEO VCBO IC Ptot V (V) (A) (W)

fw26025

Abstract: FW26025A fw26025a1 equivalent fw26025a1 st5027 st1802fx st2310fx MD1803DFX BUL312FP BU808DFH
Contextual Info: Power bipolar transistors TO-264 Device type NPN VCEO [V] PNP HD1530JL* HD1750JL* 700 800 VCBO VCES VCEV [V] IC [A] 1500 1700 26 24 hFE @ IC VCE Ptot [W] 200 200 VCE sat @ IC IB Application Min Max [A] [V] [V] [A] [mA] 5.5 5.5 9 9.5 13 12 5 5 2 3 13 12 3250

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B