TIP NPN Search Results

tip35

Abstract: tip 35c
Contextual Info: 7 ^ 5 3 7 002^247 SGS-THOMSON T TIP35/35A/35B/35C TIP36/36A/36B/36C S G S - T H 0 MS 0 N 3QE ] POWER AMPLIFIER AND SWITCHING APPLICATIONS ADVANCE DATA DESCRIPTION The TIP35/TIP35A/TIP35B/TIP35C are silicon epi­ taxial-base NPN transistors in SOT-93 plastic

OP165W

Abstract: OP505W IB 115
Contextual Info: @.OPIEK •i bv^asao □□□2bL3 abb Product Bulletin O P505W June 1996 NPN Silicon Phototransistor Type OP5Q5W Features A b so lute M axim um R atings T a = 25° C unless otherw ise noted • Wide receiving angle • T-1 package style • Small package size for space limited

1-ST1781

Abstract: ST178
Contextual Info: [*Q REFLECTIVE OBJECT SENSOR OPTOELECTRONICS QRC1133 PACKAGE DIMENSIONS DESCRIPTION The QRC1133 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor reponds to radiation from the emitting

LE57D111BTC

Abstract: Le57D111DJC zarlink PACKING TISP6NTP2A GR-357-CORE
Contextual Info: Le5711 Dual Subscriber Line Interface Circuit VE580 Series Data Sheet Features Document ID#: 081132 • Dual-channel SLIC device with small footprint • On-chip Thermal Management TMG feature in Normal and Reverse Polarity • Control states: Active (Normal and Reverse

OPB865T51

Contextual Info: SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB865T11/OPB865T51/OPB865T55 PACKAGE DIMENSIONS SEE NOTE 3 N 1 s <3p - t •S’ The OPB865T series of switches is designed to allow the user m axim um flexibility in applications. Each switch consists of an infrared em itting diode facing an NPN

K934

Abstract: CSP1034 Krypton isolation k952 TRANSISTOR SMD MARKING CODE R8 smd diode code GU K936 k2950 Motorola modem schematic diagram 56k MARKING d4 SMD PNP TRANSISTOR
Contextual Info: K²950G/K²950GU DATA ACCESS ARRANGEMENT CHIPSET HIGH PERFORMANCE, LOW COST, ALL SILICON DAA DATA ACCESS ARRANGEMENT FOR US (FCC), CANADA (DOC), and JAPAN (JATE) APPLICATIONS FEATURES ♦ High performance for modems up to V.34/ 33.6Kbps and V.90/56Kbps ♦ Low power consumption: 20mW active,

c2689

Abstract: C2689 equivalent automotive ignition tip162 T1P160 equivalent to tip162
Contextual Info: TEXAS INSTR ÌOPTO> d ìT | 8961 72 6 TEXAS INSTR OPTO 003^.^30 62C 36938 TIPI 60, TIPI 61, TIPI 62 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V ISE D O C T O B E R 1 9 84 50 W at 100°C Case Temperature T-33-29 10 A Rated Continuous Collector Current

T1P102

Contextual Info: bH TEXAS I N S T R -COPTO} Ï Ë J Ö lbl7ab 896-1726 TEXAS INSTR OPTO 0D3bö7D □ 62C 3Ó870 TIP100, TIP101, TIP102 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS _ J A N U A R Y 1 9 7 7 - RE V ISE D OCTO BER 1 9 84 • Designed for Complementary Use with TIP105, TIP106, TIP107

Contextual Info: MH88210Hybrid DTMF Receiver System M ITE L OCT. 1981 Features • • • • • • • • Up to 40dB Dynamic Range Single Power Supply No External Components Needed Direct Connection To Telephone Line Exceptional Talk Off 14dB Signal to Noise Ratio

MPQ6842 motorola

Abstract: MPQ6842 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MPQ6842/D SEMICONDUCTOR TECHNICAL DATA Quad Complementary Pair Transistor MPQ6842 lui lìpripnil iwim m NPN/PNP Silicon LA J LA J Voltage and current are negative for PNP transistors COMPLEMENTARY rvi rvi llJ liJ LiJ LiJ LiJ Li! LzJ

DA 2688

Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
Contextual Info: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055

L791A

Abstract: TIPL791A
Contextual Info: TIPL791, TIPL791A NPN SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 • Rugged Triple-Diffused Planar Construction • 4 A Continuous Collector Current • Operating Characteristics Fully Guaranteed

Contextual Info: TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK AUG UST 1978 - REVISED MARCH 1997 • Rugged Triple-Diffused Planar Construction • 6 A Continuous Collector Current • Operating Characteristics Fully Guaranteed

ultrasonic probe ge

Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines GaAs FET chip ultrasonic bond AN-1001 Ultrasonic bubble kulicke Soffa nec microwave
Contextual Info: California Eastern Laboratories AN-1001 APPLICATION NOTE RECOMMENDED HANDLING PROCEDURES FOR MICROWAVE TRANSISTOR AND MMIC CHIPS INTRODUCTION This document is provided to inform users of some of the handling precautions necessary and the assembly processes

VE880

Abstract: IPC-D-275 Le79252 thyristor regulator CPTC thermistors LE79242 schematic design for surge protector and electric TISP9110 K15 thermistor GR-1089-CORE
Contextual Info: Protecting Legerity Subscriber Line Interface Circuits SLICs with Bourns TISP® Protector Products Version 1 Circuit Protection Solutions Written by Tim Ardley, Sr. Telecom Field Applications Engineer June 2006 Table of Contents Objective .1

FZH 161

Abstract: FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171
Contextual Info: What HEWLETT wHHM P A C K A R D 4.8 V NPN Common Em itter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% C ollector Efficiency

Contextual Info: i5n SLOTTED OPTICAL SWITCH OPIOELECTROIIICS QVL21653 PACKAGE DIMENSIONS © ; y .138 ±.02 3.5 ±0.5 — .050 (1.27) .100 NOM NOTES: 1. DIM ENSIONS ARE IN INCHES (m m ). 2. TOLERANCE IS ±.0 1 0 UNLESS OTHERWISE SPECIFIED. DESCRIPTION The QVL21653 consists of an infrared light emitting

Ic 4084 14 pin

Abstract: RL011
Contextual Info: rEMIC U 4084 B ELEFUNKEN Semiconductors vow Voltage Voice Switched Circuit for Hands-free peration in Telephone, Intercom Systems, Household, tusiness Use, Car Telephones etc. description ow voltage voice switched speakerphone circuit 4084 B, incorporates many functions given below

E32-D32

Abstract: E3X-CN12 E3X-NA11 E3X-NA41 E3X-NAG11 E3X-NAG41 Polycarbonate 1501-50 power regulator E32-D11R E32-D12R
Contextual Info: User-Friendly Fiber-Optic Amplifier E3X-NA Solve Your Basic Sensing Challenges Easily with the E3X-NA Series • ■ ■ ■ ■ ■ ■ ■ ■ Streamlined features provide basic sensing immediately after plug-in Wire-saving amplifiers reduce installation

Contextual Info: SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB862N51/OPB862N55 PACKAGE DIMENSIONS SEE NOTE 3- 125 3 .1 8 H OPTICAL n CENTERLINE -.4 8 5 (12.32 (-.110 (2.7 9) T .345 (8.78) .425 (10.80)^MIN -I f ^ COLLECTOR 3 r .425(10.79) PIN 1 IDENTIFICATION (-.3 2 0 (8 .1 3 )

TRANSISTOR BO 345

Contextual Info: [sO SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB866N51/OPB866N55 DESCRIPTION PACKAGE DIMENSIONS SEE NOTE 3 125 3 .1 8 OPTICAL CENTERLINE -.4 85(12.3 2) r .110(2.79) The OPB866N series of switches is designed to allow the user maximum flexibility in applications. Each switch

NTE731

Contextual Info: NTE731 Integrated Circuit TV Video Signal Processor Description: The NTE731 is an integrated circuit in a 16−Lead DIP type package and performs many of the functions which are often collectively referred to as the video “jungle”. This device provides keyed AGC

25C31

Abstract: 5113 LED
Contextual Info: SIEMENS FEATURES IL256 AC INPUT PHOTOTRANSISTOR SMAUL OUTLINE SURFACE MOUNT OPTOCOUPLER Package Dimensions in Inches mm • Guranteed CTR Symmetry, 2:1 Maximum • B idirectional AC Input • Industry Standard SOtC-8 Surface Mountable Package • Standard Lead Spacing, .05*

transistor 3B6 smd

Contextual Info: TAXIchip Integrated C ircuits Transparent Asynchronous Transmitter/Receiver Interface Am7968/Am7969-125 Am7968/Am7969-175 Data Sheet and T e c h n ic a l Manual 1994 A D V A N C E D M I C R O D E V I C E S £1 1994 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products