SGS116 Search Results

Contextual Info: SGS116 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k h(FE) Max. Current gain.

sgs110

Abstract: SGS116
Contextual Info: •I 7 ^ 2 3 7 002^2^3 fi H ^ 3 3 ^/ SCS-THOMSON TIP/SGS110-111-112 [IQMmiiOïtMQÛS TIP/SGS115-116-117 S G S-TH0MS0N 3DE D POWER DARLINGTONS DESCRIPTIO N The TIP110, TIP111, TIP112 and SGS110, SGS111, SQS112 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration

mje520

Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
Contextual Info: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen­ hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50

2M3055

Abstract: B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908
Contextual Info: G E N E R A L P U R P O S E T R A N S IS T O R S Comple­ Type mentary V CE0 V CB0 V (V) 'c (A) hFE * 'c (A) V CE V CEsat (V) (V) 9 'c (A) 'b R 1hj-c (mA) fC/W) 1.5 1.17 1.17 1.17 1.17 1399 1047 1047 1053 1053 T O -3 T O -3 T O -39 T O -3 T O -3 1047 1047

U/25/20/TN26/15/850/yd 803 ic

Abstract: BUX22M JE13005 JE802 TIP+317+data+sheet bu808df1 je200 2n5337 S13003 2N6057
Contextual Info: G E N E R A L P U R P O S E T R A N S IS T O R S TY PE ‘c V CE V CEsat 8 A (V) (V) 'o (A) 'b Rthj-c (mA) rc / w ) V CE0 V CB0 'c (V) (V) (A) 22 22 4 BD433 BD434 50 2.00 1.0 0.50 2.00 200 25 40 5 M JE200 M JE210 70 0.50 1.0 0.30 0.50 50 30 30 3 M JE520