TFK AF Search Results

Vishay LCD

Abstract: LCD-160H128B-TFK-VZ LCD-160H128B
Contextual Info: LCD-160H128B-TFK-VZ www.vishay.com Vishay 160 x 128 Graphic LCD FEATURES • Type: Graphic • Display format: 160 x 128 dots • Built-in controller: RA6963 • Duty cycle: 1/128 • + 5 V power supply • Optional N.V. • Material categorization: For definitions of compliance

TFK 082

Abstract: J1 TRANSISTOR
Contextual Info: ß tfk c m 1 m a n A M P com pany Wireless Bipolar Power Transistor, 12W PH1617-12N 1.6-1.7 GHz y/b Features £4 /7 '25 • • • • • • • ( 18 . 4 2 ) NPN Silicon M icrow ave P ow er T ran sisto r D esigned fo r L inear A m plifier A pplications

TFK 175

Contextual Info: A tfK Ô M m an A M P com pany 10W GaAs SPDT Switch DC-3 GHz MASW2020G V 2 .0 0 Features QNO 1 B1 COM RF1 GND 2 • V e r y l l i g l i P o w e r, l W atts I tl H C o m p r e s s i o n <f«-l()V • l.o w In s e r tio n Loss, 0. I d B T y p i c a l @ I C iH z

TFK U B

Abstract: R75n
Contextual Info: Thh dD«urn«n1 re t h i pr«p«rty «f A m pha io l C w p a n rlk n and fs d*nv«r«d an R E V IS IO N S +h« e xp ress c an dR ia n m o i fh ¡e r o + +a be tfk c b s a d , rap ra dM csd o r u s s d . In whale o r In pari, ta r manu Tod urs ar M l« by « ny«i» al hcr m an Am phm nl

transistor Bc 540

Abstract: tfk 540 TFK 212 TRANSISTOR BC 212 bc 212 BC212 BC 540 TRANSISTOR
Contextual Info: SHi2:ium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and driver stages Besondere Merkmale: Features: • • • • Verlustleistung 300 mW • In G ruppen so rtie rt

TFK 450 B2

Abstract: tfk bcy 59 TFK 79 tfk bcy 58 BCY79 BCY790 75558 BCY78 BCY 59
Contextual Info: BCY 78 • BCY 79 'W Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: Allgem ein und NF-Verstärker Applications: General and AF am plifiers Besondere Merkmale: Features: • Verlustleistung 1 W • Power dissipation 1 W

42t sot-23

Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
Contextual Info: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

TFK BC

Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
Contextual Info: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:

fr 309

Abstract: BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731
Contextual Info: BC 177 • BC 178 • BC179 BC 307 - BC 308 • BC 309 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and d river stages Besondere Merkmale: Features: • BC 179, BC 309 fü r rauscharm e Vorstufen

rjr ce

Abstract: BD170 Scans-0010668 BD 166, 168, 170 bd166 JEDECTO126 BD169 BD - 100 V
Contextual Info: BD166 • BD168 • BD170 Silicon PNP Epitaxial Planar Power Transistors Anwendungen: Allgemein im NF-Bereich Applications: General in AF-range Besondere Merkmale: • Verlustleistung 20 W Features: • Power dissipation 20 W

NJU7074D

Abstract: NJU7071 NJU7071D NJU7071M NJU7071V NJU7072D NJU7072M NJU7074M NJU7074V nju707
Contextual Info: H S Î @ Ï I 4S I AUOÉflPN A^¿o¿nrN im oinP N at¿o¿nrN NUO¿nPN ai¿o¿nPN N Z¿ 0 ¿ n P N Q2¿0¿nPN ZNI.— X 3 S J J 0 I— fri ‘8 dOSS / H ‘8 dNa / H ‘8 día SlftSM-O« Afr¿0¿ílPN ALZ.0Z.Í1PN •teau¿o¿nPN ( d A * v d l = 9 1 I) 'g m u y y q : y #

c 337 25

Abstract: NPN 337 bc 170 c BC 337 bc 170 BC338 bc337 bc 338 npn bc 337 AF200
Contextual Info: BC 337 * BC 338 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: T reiber und Endstufen Applications: D river and p o w e r stages Features: Besondere Merkmale: • Verlustleistung 625 mW • In G ruppen so rtie rt

BSW39

Abstract: lamb
Contextual Info: BSW39 Silizium-NPN-Epitaxial-Planar-Schalttransistor Silicon NPN Epitaxiai Pianar Switching Transistor Anwendungen: NF-Verstärker und Schalter Applications: AF am plifiers and sw itches Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

AF239

Abstract: germanium-pnp-mesa-hf-transistor AF 239
Contextual Info: 'W Nicht für Neuentwicklungen Not for new developments AF 239 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 900 MHz Applications: Pre, m ixe r and o scilla to r stages up to 900 MHz

TFK 940

Contextual Info: EL-IK3 £, 7 DIMENSIONS > 7 L t z ^ TO -\W'C7<r>&\&-hQ>atefrJS-%%?'< (Unit: mm F T fo 14, iii1 S $ S 1 4 W ^ ( = ^ ^ J 1 - 0 The EL-1K3 is a high-power GaAs IRED mounted in durable, hermetically sealed TO-18 metal can package, which provides years of reliable performance even under

BF314

Abstract: tfk 248 TFK 29 16go TFK 4 314 TFK 450 ic251 TFK 175 TRANSISTOR K 314 BF 251
Contextual Info: BF 314 'W Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Feafures: • Kleine R ückwirkungskapazität

TFK E 1024

Abstract: TFK 351
Contextual Info: DEC T 1992 4M egx 1 Monolithic DRAM m o l a i e MDM14001-80/10/12 issue 1.2 : December 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. 4,194,304 x 1 CMOS High Speed Dynamic RAM Features Row Access Time of 80,100,120 ns Available in 20 Pin DIP, 20 & 24 Pin VIL

JX5417

Abstract: diode tfk s 220 transistor b 595 PH0810-150 AF100 TFK 03
Contextual Info: yMâcGM Æ a n A M P com pany Wireless Bipolar Power Transistor, 150W 850 - 960 MHz PH0810-150 Features • • • • D esigned for Linear A m plifier A pplications Class AB: -32 dBc Typ 3 rd 1MD at 150 W atts PEP C o m m o n E m itter C o n fig u ratio n

TFK 839

Abstract: TFK 609 TFK 834 AEG TFK TELEFUNKEN TFK 809 TFK 893 TFK 9730 tfk 944 TFK 505 am diode tfk 817
Contextual Info: Tem ic Sales Offices TELEFUNKEN Semiconductors Addresses Europe Denmark Hungary THMIC Dansk c/o AFXi Dansk Aktieselskab Roskildevej 8-10 2620 Albcrtslund Tel: 45 42 64 85 22 Fax: 45 43 62 62 28 TEMIC TELEFUNKEN microelectronic GmbH Kruppstrasse 6 45128 Essen

SGLA36AT0600

Abstract: SGHA36AT0600 GE TFK Breakers SELA36AT0100 SGHA36AT0400 TFK4 Cable GEH-5591 SKHA36AT1200 skla36at0800 sfla36at0250
Contextual Info: Molded Case Circuit Breakers Molded Case Circuit Breakers – Features .3-2 Spectra RMS Circuit Breakers with MicroVersaTrip Plus Trip Units – Features .3-3 Molded Case Circuit Breakers – Quick Reference Guide .3-4

3 tfk 206

Abstract: tfk Phototransistor TFK 201 DIN 50014 STANDARD Vishay Telefunken tfk transistor MCT62H tfk order
Contextual Info: MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using

sn76447

Abstract: 7B449 20 TFK diodes
Contextual Info: SN7S446 THRU SN75449 DUAL PERIPHERAL DRIVERS D 2 4 8 1 . DECEMBER 1 9 7 8 -R E V IS E D DECEMBER 1 9 8 9 • Vary Low Power Requirements • Very Low Input Current • Characterized for Uae to 3 5 0 mA • No Output Latch-Up at 50 V After Conducting 3 00 mA

Contextual Info: [Z T ^ 7 #. SCS-THOMSON L9946 R{flö [^ Q [l[Ul©TFK ROD©i MULTIPLE HALF BRIDGE DRIVER ADVANCE DATA • ■ ■ ■ ■ 4.75A TOTAL OUTPUT CURRENT VERY LOW CONSUMPTION IN OFF STATE OVERLOAD DIAGNOSTIC OPEN LOAD DIAGNOSTIC GROUNDED CASE DESCRIPTION The L9946 device Is a quad half bridge plus an

Contextual Info: 19-0625; Rev 1; 1/07 EEPROM-Programmable, High-Voltage, 350mA LED Drivers with LED Current Foldback The MAX16805/MAX16806 LED drivers eliminate the need for microcontrollers or switch-mode converters for automotive interior dome, map, and courtesy light applications. An EEPROM-programmable LED currentsense reference simplifies production by using one