TD1N Search Results
TD1N Price and Stock
STMicroelectronics STD1NK80ZT4- Tape and Reel (Alt: STD1NK80ZT4) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STD1NK80ZT4 | Tape & Reel | 880,000 | 32 Weeks | 2,500 |
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| STD1NK80ZT4 | Ammo Pack | 1 |
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STD1NK80ZT4 | 362 |
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STD1NK80ZT4 | Tape & Reel | 2,873 | 100 |
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| STD1NK80ZT4 | Cut Tape | 2,873 | 1 |
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| STD1NK80ZT4 | Tape & Reel | 2,500 |
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| STD1NK80ZT4 | Tape & Reel | 2,500 |
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STD1NK80ZT4 | 4,037 |
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| STD1NK80ZT4 | 1,863 | 1 |
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STD1NK80ZT4 | 368 | 1 |
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STD1NK80ZT4 | 4,900 |
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STD1NK80ZT4 | 27 Weeks | 2,500 |
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STD1NK80ZT4 | 40,000 | 27 Weeks | 2,500 |
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STD1NK80ZT4 | 36,411 |
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STMicroelectronics STD1NK60T4- Product that comes on tape, but is not reeled (Alt: 33R1142) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STD1NK60T4 | Ammo Pack | 5 |
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| STD1NK60T4 | Tape & Reel | 32 Weeks | 2,500 |
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STD1NK60T4 | 1,632 |
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STD1NK60T4 | Tape & Reel | 34,317 | 100 |
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| STD1NK60T4 | Cut Tape | 34,317 | 5 |
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| STD1NK60T4 | Tape & Reel | 2,500 |
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| STD1NK60T4 | Tape & Reel | 2,500 |
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STD1NK60T4 | 10,000 | 1 |
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| STD1NK60T4 | 21 |
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STD1NK60T4 | 1,693 | 1 |
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STD1NK60T4 | 27 Weeks | 2,500 |
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STD1NK60T4 | 24 |
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STD1NK60T4 | 105,000 | 27 Weeks | 2,500 |
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STD1NK60T4 | 20,000 |
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STMicroelectronics STD1NK60-1Power MOSFET, N Channel, 600 V, 500 mA, 8 ohm, TO-251AA, Through Hole - Rail/Tube (Alt: STD1NK60-1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STD1NK60-1 | Tube | 26 Weeks | 3,000 |
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STD1NK60-1 | 275 |
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STD1NK60-1 | 232 | 1 |
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STD1NK60-1 | 825 | 27 Weeks | 75 |
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STD1NK60-1 | 3,000 | 27 Weeks | 75 |
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onsemi HGTD1N120BNS9A- Tape and Reel (Alt: HGTD1N120BNS9A) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HGTD1N120BNS9A | Tape & Reel | 19 Weeks, 1 Days | 2,500 |
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HGTD1N120BNS9A | 33,060 |
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HGTD1N120BNS9A | Tape & Reel | 2,424 | 100 |
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| HGTD1N120BNS9A | Cut Tape | 2,424 | 1 |
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| HGTD1N120BNS9A | Tape & Reel | 2,500 |
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| HGTD1N120BNS9A | Tape & Reel | 2,500 |
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| HGTD1N120BNS9A | Cut Tape | 2,500 |
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HGTD1N120BNS9A | 2,500 |
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HGTD1N120BNS9A | 70 Weeks | 2,500 |
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HGTD1N120BNS9A | 18 Weeks | 2,500 |
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HGTD1N120BNS9A | 19 Weeks | 2,500 |
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HGTD1N120BNS9A | 2,500 |
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KOA Speer Electronics Inc MHL1JCTTD1N0JRF Inductors - SMD 1nH 5% |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MHL1JCTTD1N0J |
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TD1N Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MOTOROLA O rder this docum ent by M TD1N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD1N60E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 1.0 AMPERE 600 VOLTS N-Channel Enhancement-Mode Silicon Gate |
OCR Scan |
td1n60e/dtd1n60emtd1n60e/d | |
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Contextual Info: MOTOROLA O rder this docum ent by M TD1N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD1N50E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 1.0 AMPERE 500 VOLTS N-Channel Enhancement-Mode Silicon Gate |
OCR Scan |
td1n50e/dtd1n50emtd1n50e/d | |
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Contextual Info: MOTOROLA O rder this docum ent by M TD1N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD1N80E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 1.0 AMPERES 800 VOLTS N-Channel Enhancement-Mode Silicon Gate |
OCR Scan |
td1n80e/dtd1n80emtd1n80e/d | |
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Contextual Info: *57 SGS-THOMSON !LiO T iQ £I S TD1NA60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE TD1NA60 V dss R DS(on Id 600 V < 8 a 1.6 A . TYPICAL R D S ( o n ) = 7.2 Q m AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C |
OCR Scan |
td1na60std1na60o-251o-252 | |
2118B-02
Abstract: STV2118B sharp colour tv circuit diagram stv2118 STV2112A TDA8174 4.25mhz Vision Mid 28 NTSC Decoders STV8224
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stv2118bshrink42stv8224tda1771+9 | |
ene kb3310qf c1
Abstract: kb3310qf c1 ene kb3310qf a0 ene kb3310qf b0 MB39A129 ene kb3310 KB3310 kb3310qf ene kb3310qf RTM875T-606
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ck505m533mhz945gms/gse512mb+16 | |
schottky barrier diode b22
Abstract: g17g diode td15
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56bitbu7988kvt150mhz112mhz+6 | |
cx20561-12z
Abstract: IT8502 IT8502E fds8884 8502E CX20561 RT8204 ISL6251 ALPRS355B R5538
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318mhzalprs355bmlf64pin768khz+15 | |
TA141
Abstract: diode td13 TD-101 TA22 TD-121 TD13 TB-23 BU7988KVT g171
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bu7988kvt56bit12057eat05150mhz+12 | |
TER22Contextual Info: KOA SPEER ELECTRONICS, INC. SS-222 R7 AHA 1/12/04 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency |
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ss-222ter22 | |
tdr22Contextual Info: KOA SPEER ELECTRONICS, INC. SS-222 R5 AHA 6/30/03 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency |
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ss-222tdr22 | |
TDR15
Abstract: TD18N TD68N TP82N TP68N
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tdr15td18ntd68ntp82n+1 | |
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Contextual Info: KOA SPEER ELECTRONICS, INC. SS-222 R9 AHA 2/09/05 Multilayer Ceramic Inductors Type MHL CERTIFIED CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency |
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ss-222dimensions039 | |
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Contextual Info: KQ high Q inductor features dimensions and construction L Flat Top Film Ceramic/ Ferrite Core t Electrode h d Size Code W1 Magnetic Inner Wire Coating W2 L W1 Dimensions inches mm W2 t .02±.004 KQT0402 .039±.004 (1.0±0.1) (0.5±0.1) h d .02±.004 .022±.004 .006±.004 .01±.004 |
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kqt0402kq0603 | |
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NDF 4003
Abstract: k312 451 lcd 5421 rd2n ap 4604 rd13n STM-16 STM-64 STS-192 STS-48
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tsot0410g4sts-192stm-64sts-48+11 | |
txc 24.5
Abstract: rd2p 2 pin crystal oscillator 24.5 mhz VALOR lan transformer 82553 AUTOMATIC PHASE SELECTOR feed-forward encoder 0190A1
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100base-t10base-ttxc 24.5rd2p+6 | |
369A-10
Abstract: AN569 MTD1N40 MTD1N40-1 TO-252 N-channel power MOSFET
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OCR Scan |
mtd1n40369a-10an569mtd1n40-1+1 | |
rd2n
Abstract: TX33 BCM5000 PE-69024 30MHZ rd2p td3p 92112
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10/100base-t410/100mb/spe-69024pe-69025+7 | |
pal 011 A SPEAKER OUTPUT ICContextual Info: { Z T S G S -T H O M S O N JÆ , I M » I [ L I ^ [ M i * STV 2116 A BUS CONTROLLED PAL/NTSC TV PROCESSOR • ■ ■ ■ ■ ■ ■ - l2C BUS CONTROL OF ALL FUNCTIONS INTEGRATED FILTERS (TRAP, BANDPASS INTEGRATED LUMINANCE DELAY LINE PAL7NTSCCHROMA DEMODULATORS |
OCR Scan |
stv8223tda1771tda8174stv2180+1 | |
pinout of bel 100N transistor
Abstract: DP83223V ST70321 SF1020 service manual sd-118 sd BCM5000 Valor Electronics SF1020 80z1209 10BASE5 ML6692
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10/100-mb/snet10/100base-txpinout of bel 100n transistordp83223v+8 | |
Kappa current transformer catalog
Abstract: dp83840vce BCM5000 78Z4 DP83223V valor st6118 DP83223 DP83223A DP83840 RJ45-8
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1140a10/100-mb/skappa current transformer catalogdp83840vce+8 | |
TX1B
Abstract: tx-3b BCM5000 100BASE-T4 RD4N
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OCR Scan |
100base-t4tx1btx-3bbcm5000+1 | |
rd2n
Abstract: rd2p BCM5000 78Z9022SM Broadcom Ethernet EMI TX33
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100base-t4pe-69024pe-69025rd2n+5 | |
STV2116
Abstract: STV2116 pin out crystal 4.43MHZ oscillator STV2216 211602 stv2112a xsxx STV8223 STV2112 211617
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stv2116shrink42stv8223tda1771+12 | |