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    TD1NA60 Search Results

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    TD1NA60 Price and Stock

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    SGS‑Thomson Microelectronics STD1NA60T4

    Trans MOSFET N-CH 600V 1.6A 3-Pin(2+Tab) DPAK T/R
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    Bristol Electronics STD1NA60T4 2,000
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    SGS Semiconductor Ltd STD1NA60

    N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Power Field-Effect Transistor, 1.6A I(D), 600V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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    ComSIT USA STD1NA60 1,629
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    TD1NA60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: *57 SGS-THOMSON !LiO T iQ £I S TD1NA60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE TD1NA60 V dss R DS(on Id 600 V < 8 a 1.6 A . TYPICAL R D S ( o n ) = 7.2 Q m AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		TD1NA60 STD1NA60 O-251) O-252) O-251 O-252 PDF