TD13 Search Results

13005 2 transistor

Abstract: D13005 TRANSISTOR 13005 13005 s 13005 TRANSISTOR d13005t 13005T 13005 ballast 13004 TRANSISTOR transistor 13005 CIRCUIT
Contextual Info: TD13004 • TD13005 Te m ic TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology Very low dynam ic saturation • G lass passivation Very low operating tem perature • Very short sw itching times High reverse voltage

transistor Electronic ballast 13005

Abstract: TD13005 transistor E 13005 SMD 13005 transistor transistor d 13005 13005 ballast 13005 TO-252 transistor 13005 CIRCUIT BR 13005 transistor 13005
Contextual Info: T e m ic TD13004 • TD13005 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • Very low dynamic saturation • Glass passivation • Very low operating temperature • Very short switching times

td13005d

Abstract: TD13004 TD13004D TD13005 9915 transistor
Contextual Info: TD13004D • TD13005D TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D D D D Monolithic integrated C-E-free-wheel diode HIGH SPEED technology Planarpassivation Very short switching times D D D D Very low switching losses Very low dynamic saturation

Contextual Info: N Datenblatt / Data sheet Netz-Thyristor-Modul Phase Control Thyristor Module TT131N TT131N TD131N DT131N Kenndaten Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max

thyristor tt 131

Abstract: 4650N DT131N KM14 TD131N TT131N
Contextual Info: Datenblatt / Data sheet N Netz-Thyristor-Modul Phase Control Thyristor Module TT131N TT131N TD131N DT131N Kenndaten Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max

13003 transistor SMD

Abstract: transistor smd XH d13003 TD13002 13003 NPN Transistor features TD13003 al 13003 electronic ballast 13003 transistor al 13003 c s 13003 TRANSISTOR h
Contextual Info: T e m ic TD13002 • TD13003 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • Very low dynamic saturation • Glass passivation • Very low operating temperature • Very short switching times

TD13004D

Abstract: TD13005D smd diode 239
Contextual Info: TD13004D • TD13005D TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D Monolithic integrated C-E-free-wheel diode D Very low switching losses D HIGH SPEED technology D Very low dynamic saturation D Planarpassivation D Very low operating temperature

td13003

Abstract: 597 smd transistor td13002
Contextual Info: TD13002 • TD13003 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D D D D D Very low dynamic saturation D Very low operating temperature D High reverse voltage HIGH SPEED technology Glass passivation Very short switching times

Contextual Info: TD13004D • TD13005D wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor • Very short switching times Features Very low switching losses • Very low dynamic saturation • Very low operating temperature • High reverse voltage • •

Contextual Info: MOTOROLA Order this document by TD1302/D SEMICONDUCTOR TECHNICAL DATA Advance Information H D T M O S E-FET H igh D e n s ity P o w e r FET DPAK fo r S u rfa c e M o u nt M TD1302 TMOS POWER FET 20 AMPERES 30 VOLTS RDS on = 0.022 OHM N-Channel Enhancement Mode Silicon Gate

transistor SMD LOA

Abstract: 9915 transistor TD13005D 1b.1 smd transistor ir 9911
Contextual Info: Temic Semiconductors TD13004D • TD13005D Silicon NPN High Voltage Switching Transistor Features Monolithic integrated C-E-free-wheel diode HIGH SPEED technology Planar passivation Very short switching times Very low switching losses Very low dynamic saturation

transistor 13005D

Abstract: LO 13005D TRANSISTOR 13005D D13005d BR 13005d 13005D TRANSISTOR LO 13005D TR 13005D w 13005d 13004D
Contextual Info: Te m ic TD13004D • TD13005D TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • M o n o lith ic in te g ra te d C -E -fre e -w h e e l d io d e V ery low sw itch in g losses • H IG H S P E E D te c h n o lo g y V ery low d y n a m ic satu ratio n

TD13003

Abstract: TD13002
Contextual Info: TD13002 • TD13003 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D HIGH SPEED technology D Very low dynamic saturation D Glass passivation D Very low operating temperature D Very short switching times D High reverse voltage

TD13005D

Abstract: TD13005 TD13004 TD13004D
Contextual Info: TD13004D • TD13005D Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D Monolithic integrated C-E-free-wheel diode D HIGH SPEED technology D Planar passivation D D D D D Very short switching times Very low switching losses Very low dynamic saturation

TD13005D

Abstract: 9915 transistor TD13005 power transistor Ic 4A NPN smd 95-9911 TD13004D smd transistor a2 ir 9911 9666 TD13004
Contextual Info: TD13004D • TD13005D Silicon NPN High Voltage Switching Transistor Features D D D D Monolithic integrated C-E-free-wheel diode HIGH SPEED technology Planar passivation Very short switching times D D D D Very low switching losses Very low dynamic saturation

td1316

Abstract: philips vhf uhf tuner philips vhf uhf tuner td1316 TUNER module DVB-t tuner module hybrid TUNER philips philips application philips tuner mt352 design manual DVB-T
Contextual Info: DVB-T REFERENCE DESIGN WITH PHILIPS ZLE10518 PRODUCT PREVIEW The ZLE10518 reference design is a complete DVB-T digital terrestrial front-end built around the Zarlink MT352 high-performance COFDM demodulator and the Philips TD1316 DVB-T hybrid tuner, inclusive of

Contextual Info: Datenblatt / Data sheet N Netz-Thyristor-Modul Phase Control Thyristor Module TT131N TT131N TD131N DT131N Kenndaten Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max

9915 transistor

Abstract: TD13005 TD13004 power transistor Ic 4A NPN smd
Contextual Info: TD13004 • TD13005 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D D D D D Very low dynamic saturation D Very low operating temperature D High reverse voltage HIGH SPEED technology Glass passivation Very short switching times

4650N

Abstract: DT131N KM14 TD131N TT131N
Contextual Info: Datenblatt / Data sheet N Netz-Thyristor-Modul Phase Control Thyristor Module TT131N TT131N TD131N DT131N Kenndaten Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max

mosfet k 1312

Abstract: motorola transistor dpak marking
Contextual Info: MOTOROLA Order this document by TD1312/D SEMICONDUCTOR TECHNICAL DATA Advance Information M TD1312 HDTMOS1A High Density Power FET DPAK for Surface Mount SINGLE TMOS POWER MOSFET 30 VOLTS RDS on = 0.016 OHM N-Channel Enhancement Mode Silicon Gate This advanced HDTMOS1A power FET is designed to withstand

transistor sw 13003

Abstract: sw 13003 E 13003 TRANSISTOR 13003 TRANSISTOR transistor 13003 k 13002 TRANSISTOR Sw 13003 c transistor 13003 d 13003 x T 13003 transistor
Contextual Info: Te m ic TD13002 • TD13003 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIG H SPEED technology Very low dynam ic saturation • Glass passivation Very low operating tem perature • Very short sw itching tim es High reverse voltage

SMJ9914

Contextual Info: SMJ9914A GRIB CONTROLLER JU N E 1 9 8 6 - R E V ISE D M A R C H 1988 • Handles AH IEEE-488 1975/78 Functions • Compatible with IEEE-488A 1980 Supplement • Maximum Transfer Rate . . . Greater Than 360 Kilobytes/Second • Talker and Listener Function T, TE, L, LE

TSB41LV03

Contextual Info: TSB12LV01A / TSB12LV01AI Data Manual IEEE 1394-1995 High-Speed Serial-Bus Link-Layer Controller Sourced from: SLLS332A February 2000 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue

SLLA081

Abstract: paccom ev app abstract
Contextual Info: TSB12LV01BĆEP IEEE 1394Ć1995 HighĆSpeed SerialĆBus LinkĆLayer Controller Data Manual July 2002 Mixed Signal Products SGLS123 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications,