TD 6950 Search Results

MSM6950

Contextual Info: OKI semiconductor MSM6950B ANALOG FRONT END LSI GENERAL DESCRIPTION The M S M 6950B is an analog front-end LSI which is fabricated by O K I's low power con­ sumption CMOS silicon gate technology for modem chip set based on Bell 2 1 2A . C C IT T V . 22 and C C IT T V . 22 bis standard. The M SM 6950B consists of tw o BPFs, for lo w band

2SK2225

Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Contextual Info: CONTENTS • Index. 4 ■ General Information.

AN569

Abstract: MTW20N50E
Contextual Info: MOTOROLA Order this document by MTW20N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination

S 170 MOSFET TRANSISTOR

Abstract: MTW20N50E-D TO-247 Package
Contextual Info: MOTOROLA Order this document by MTW20N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW20N50E Motorola Preferred Device TMOS POWER FET 20 AMPERES 500 VOLTS RDS on = 0.24 OHM

AN569

Abstract: MTW20N50E
Contextual Info: MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

Contextual Info: MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

Contextual Info: 2SJ361 Silicon P-Channel MOS FET Application UPAK High speed power switching 1 Features • • • • 3 Low on–resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source 2 4 2, 4 1. Gate 2. Drain 3. Source 4. Drain

td 6950

Abstract: 2SJ361
Contextual Info: 2SJ361 Silicon P-Channel MOS FET Application UPAK High speed power switching 1 Features • • • • 3 Low on–resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source 2 4 2, 4 1. Gate 2. Drain 3. Source 4. Drain

Hitachi DSA002713

Contextual Info: 2SJ361 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Outline UPAK 3 2 1 4 D 1. Gate 2. Drain

Contextual Info: New Product Si4890BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.012 at VGS = 10 V 16 0.016 at VGS = 4.5 V 14 VDS (V) 30 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS 10 nC APPLICATIONS

Contextual Info: New Product Si4890BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.012 at VGS = 10 V 16 0.016 at VGS = 4.5 V 14 VDS (V) 30 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS 10 nC APPLICATIONS

transistor mj 1504

Abstract: AN569 MTV20N50E SMD310 mj 1504 transistor mj 1504 scheme
Contextual Info: MOTOROLA Order this document by MTV20N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor D3PAK for Surface Mount Designer's MTV20N50E TMOS POWER FET 20 AMPERES 500 VOLTS RDS on = 0.240 OHM N–Channel Enhancement–Mode Silicon Gate

Si3458BDV

Abstract: Si3458BDV-T1-E3
Contextual Info: New Product Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 VDS (V) 60 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS 3.5 nC APPLICATIONS

Si4890BDY

Abstract: Si4890BDY-T1-E3 69502
Contextual Info: Si4890BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.012 at VGS = 10 V 16 0.016 at VGS = 4.5 V 14 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Si3458BDV-T1-E3

Abstract: Si3458BDV
Contextual Info: New Product Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 VDS (V) 60 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS 3.5 nC APPLICATIONS

SI3458BDV-T1-GE3

Abstract: Si3458BDV Si3458BDV-T1-E3
Contextual Info: Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

MOSFET 20n50e

Abstract: 20N50E motorola 20n50e gs 431 transistor
Contextual Info: MOTOROLA Order this document by MTW20N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW20N50E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 20 AMPERES 500 VOLTS

8414 hr papst

Contextual Info: Kompaktlüfter für Gleich- und Wechselspannung Ausgabe 2015-04 Trendsetter in der Lüftertechnologie Kompromisslose Qualität made by ebm-papst Zu den Besten gehören Mit innovativen Technologien Trends setzen. Den Kunden zuhören. Aus den Anforderungen der Praxis neue Ideen entwickeln und mit Pioniergeist in die Tat umsetzen. Mit dieser Philosophie ist ebm-papst zum

Si3458BDV

Abstract: Si3458BDV-T1-E3 Si3458BDV-T1-GE3
Contextual Info: Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

c 4977 transistor

Abstract: transistor on 4977 mosfet 452 JSs 97 diode
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet TMOS E-FET ™ Power Field Effect Transistor D3PAK for Surface Mount MTV20N50E TMOS POWER FET 20 AMPERES 500 VOLTS RDS on = 0.240 OHM N-Channel Enhancement-Mode Silicon Gate The D^PAK package has the capability of housing the largest chip

Hitachi 2SJ

Abstract: Hitachi DSA002779
Contextual Info: 2SJ361 Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Outline 2SJ361 Absolute Maximum Ratings Ta = 25°C

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

TDA 8841 IC

Contextual Info: Compact fans for AC and DC version 2014 Trendsetter in fan technology Uncompromising quality made by ebm-papst Among the best. Trendsetting with innovative technologies. Listening to customers’ needs. Developing new ideas to meet requirements and realising them with

Contextual Info: 25 Vertretungen Zubehör AC-Radiallüfter AC-Axiallüfter ACmaxx / GreenTech EC-Kompaktventilatoren DC-Lüfter - Specials DC-Radiallüfter DC-Axiallüfter Übersicht DC-Axiallüfter / DC-Diagonallüfter 2014-11 DC-Axiallüfter Informationen DC-Axiallüfter