TC 9310 IC DATA SHEET Search Results

74LS160D

Abstract: 74LS160PC IC 74LS160 74160PC 74LS160 parallel counter 74LS160P Ls 74160 74LS162D 74162FC logic diagram of 74ls160
Contextual Info: 160 • 162 CONNECTION DIAGRAM \ftoic oïb PINOUT A 54/74160 • 54LS/74LS160 ¿ ,6 ^ /7 4 1 6 2 • 94LS/74LS162 0/co4- / ^SYNCHRONOUS PRESETTABLE BCD DECADE COUNTERS H E îfilv c c C P |7 î ï DESCRIPTION — The ’160 and '162 are high speed synchronous decade

RHRU5040

Abstract: RHRU5050 RHRU5060
Contextual Info: RHRU5040, RHRU5050, RHRU5060 Data Sheet April 1995 File Number 3919.1 50A, 400V - 600V Hyperfast Diodes Features RHRU5040, RHRU5050 and RHRU5060 TA49065 are hyperfast diodes with soft recovery characteristics (tRR < 45ns). They have half the recovery time of ultrafast

74160PC

Abstract: 74LS160 parallel counter 74LS160PC BCD Decade logic diagram 74160 74LS160D 74LS162 74LS160DC 74160 74LS162 parallel counter logic diagram of 74ls160
Contextual Info: 160 162 • CO NN ECTIO N DIAGRAM / n i * 54/74160 54LS/74LS160 S4LS/74LS162 ^ ^ 4 /7 4 1 6 2 P IN O U T A \ / ô / o ô ï o / ^S Y N C H R O N O U S PRESETTABLE BCD DECADE COUNTERS DESC R IP TIO N — The ’160 and '162 are high speed synchronous decade

tc 9310

Abstract: AN7254 AN7260 RFP15N15 TB334
Contextual Info: RFP15N15 Data Sheet October 1998 15A, 150V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

la 4290

Abstract: 1E14 2E12 3E12 FRF450R4 JANSR2N7298
Contextual Info: JANSR2N7298 Formerly FRF450R4 Data Sheet Radiation Hardened, N-Channel Power MOSFET The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as

Contextual Info: JANSR2N7438 Semiconductor Data Sheet Formerly Available As FSL913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

5962F9671601VEC

Abstract: 5962F9671601VXC ACTS161HMSR ACTS161MS CDFP4-F16
Contextual Info: ACTS161MS Radiation Hardened 4-Bit Synchronous Counter January 1996 Features Pinouts • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96716 and Intersil’s QM Plan 16 PIN CERAMIC DUAL-IN-LINE

ACS161HMSR

Abstract: ACS161MS CDFP4-F16 5962F9670601VEC 5962F9670601VXC
Contextual Info: ACS161MS Radiation Hardened 4-Bit Synchronous Counter January 1996 Features Pinouts • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96706 and Intersil’ QM Plan 16 PIN CERAMIC DUAL-IN-LINE

BYW51

Abstract: BYW51100 byw51200 BYW51-100 BYW51150 BYW51-150 BYW51-200
Contextual Info: BYW51-100, BYW51-150, BYW51-200 June 1995 File Number 8A, 100V - 200V Ultrafast Dual Diodes Features The BYW51 series devices are low forward voltage drop, ultra-fast-recovery rectifiers tRR < 35ns . They use a planar ion-implanted epitaxial construction.

1E14

Abstract: 2E12 FSYE23A0D FSYE23A0D1 FSYE23A0D3 FSYE23A0R FSYE23A0R1 FSYE23A0R3
Contextual Info: FSYE23A0D, FSYE23A0R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

g12n60d1

Abstract: AN7254 AN7260 HGTP12N60D1 G12N60D
Contextual Info: HGTP12N60D1 12A, 600V N-Channel IGBT April 1995 Features Package • 12A, 600V JEDEC TO-220AB • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR FLANGE • Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device

2E12

Abstract: 3E12 FSYC360D FSYC360D1 FSYC360R FSYC360R3 FSYC360R4
Contextual Info: FSYC360D, FSYC360R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single

FSYE13A0D

Abstract: FSYE13A0D1 FSYE13A0D3 FSYE13A0R FSYE13A0R1 FSYE13A0R3 2E12 MIL-STD-750 a3 4741 5
Contextual Info: FSYE13A0D, FSYE13A0R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

2E12

Abstract: FSYA150D FSYA150D1 FSYA150D3 FSYA150R FSYA150R1 FSYA150R3
Contextual Info: FSYA150D, FSYA150R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

2E12

Abstract: FSL13A0D FSL13A0D1 FSL13A0D3 FSL13A0R FSL13A0R1 FSL13A0R3
Contextual Info: FSL13A0D, FSL13A0R Data Sheet 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

FSYE913A0R3

Abstract: 2E12 FSYE913A0D FSYE913A0D1 FSYE913A0D3 FSYE913A0R FSYE913A0R1
Contextual Info: FSYE913A0D, FSYE913A0R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

2E12

Abstract: 3E12 FSYA450D FSYA450D1 FSYA450D3 FSYA450R FSYA450R1 smd transistor chart
Contextual Info: FSYA450D, FSYA450R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

2E12

Abstract: FSL110D FSL110D1 FSL110D3 FSL110R FSL110R1 FSL110R3
Contextual Info: FSL110D, FSL110R Data Sheet October 1998 File Number 4224.3 3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

2E12

Abstract: FSYA9150D FSYA9150D1 FSYA9150D3 FSYA9150R FSYA9150R1
Contextual Info: FSYA9150D, FSYA9150R Data Sheet October 1998 File Number 4582 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Features The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

2E12

Abstract: 3E12 FSYE430D FSYE430D1 FSYE430D3 FSYE430R FSYE430R1 FSYE430R3
Contextual Info: FSYE430D, FSYE430R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

1E14

Abstract: 2E12 FSYC163D FSYC163D1 FSYC163D3 FSYC163R FSYC163R1 FSYC163R3
Contextual Info: FSYC163D, FSYC163R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Contextual Info: FSYE430D, FSYE430R June 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor Communications Division has developed a series of Radiation Hardened MOSFETs specifically designed for

max6239

Contextual Info: FSTJ9055D, FSTJ9055R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Harris has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

2E12

Abstract: FSL9110D FSL9110D1 FSL9110D3 FSL9110R FSL9110R1 FSL9110
Contextual Info: FSL9110D, FSL9110R Data Sheet October 1998 File Number 4225.3 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.