TC 9310 IC DATA SHEET Search Results

74LS160D

Abstract: 74LS160PC IC 74LS160 74160PC 74LS160 parallel counter 74LS160P Ls 74160 74LS162D 74162FC logic diagram of 74ls160
Contextual Info: 160 • 162 CONNECTION DIAGRAM \ftoic oïb PINOUT A 54/74160 • 54LS/74LS160 ¿ ,6 ^ /7 4 1 6 2 • 94LS/74LS162 0/co4- / ^SYNCHRONOUS PRESETTABLE BCD DECADE COUNTERS H E îfilv c c C P |7 î ï DESCRIPTION — The ’160 and '162 are high speed synchronous decade

RHRG75100

Abstract: RHRG7570 RHRG7580 RHRG7590
Contextual Info: RHRG7570, RHRG7580, RHRG7590, RHRG75100 Data Sheet 75A, 700V - 1000V Hyperfast Diodes RHRG7570, RHRG7580, RHRG7590 and RHRG75100 TA49068 are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ionimplanted epitaxial planar construction.

40TB10

Abstract: RHRU50100 RHRU5070 RHRU5080 RHRU5090
Contextual Info: RHRU5070, RHRU5080, RHRU5090, RHRU50100 Data Sheet April 1995 File Number 3665.1 50A, 700V - 1000V Hyperfast Diodes Features RHRU5070, RHRU5080, RHRU5090 and RHRU50100 TA49066 are hyperfast diodes with soft recovery characteristics (tRR < 75ns). They have half the recovery time of

RHRU75100

Abstract: RHRU7570 RHRU7580 RHRU7590
Contextual Info: RHRU7570, RHRU7580, RHRU7590, RHRU75100 Data Sheet April 1995 File Number 3925.1 75A, 700V - 1000V Hyperfast Diodes Features RHRU7570, RHRU7580, RHRU7590 and RHRU75100 TA49068 are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of

RHRU5080

Abstract: RHRU5090 RHRU50100 RHRU5070
Contextual Info: RHRU5070, RHRU5080, RHRU5090, RHRU50100 Data Sheet April 1995 File Number 3665.1 50A, 700V - 1000V Hyperfast Diodes Features RHRU5070, RHRU5080, RHRU5090 and RHRU50100 TA49066 are hyperfast diodes with soft recovery characteristics (tRR < 75ns). They have half the recovery time of

RHRU75100

Abstract: RHRU7570 RHRU7580 RHRU7590
Contextual Info: RHRU7570, RHRU7580, RHRU7590, RHRU75100 Data Sheet April 1995 File Number 3925.1 75A, 700V - 1000V Hyperfast Diodes Features RHRU7570, RHRU7580, RHRU7590 and RHRU75100 TA49068 are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of

RHRU5040

Abstract: RHRU5050 RHRU5060
Contextual Info: RHRU5040, RHRU5050, RHRU5060 Data Sheet April 1995 File Number 3919.1 50A, 400V - 600V Hyperfast Diodes Features RHRU5040, RHRU5050 and RHRU5060 TA49065 are hyperfast diodes with soft recovery characteristics (tRR < 45ns). They have half the recovery time of ultrafast

RHRU7540

Abstract: RHRU7550 RHRU7560
Contextual Info: RHRU7540, RHRU7550, RHRU7560 Data Sheet April 1995 File Number 3945.1 75A, 400V - 600V Hyperfast Diodes Features RHRU7540, RHRU7550 and RHRU7560 TA49067 are hyperfast diodes with soft recovery characteristics (tRR < 55ns). They have half the recovery time of ultrafast

RHRU5040

Abstract: RHRU5050 RHRU5060
Contextual Info: RHRU5040, RHRU5050, RHRU5060 Data Sheet April 1995 File Number 3919.1 50A, 400V - 600V Hyperfast Diodes Features RHRU5040, RHRU5050 and RHRU5060 TA49065 are hyperfast diodes with soft recovery characteristics (tRR < 45ns). They have half the recovery time of ultrafast

RHRU7540

Abstract: RHRU7550 RHRU7560
Contextual Info: RHRU7540, RHRU7550, RHRU7560 Data Sheet April 1995 File Number 3945.1 75A, 400V - 600V Hyperfast Diodes Features RHRU7540, RHRU7550 and RHRU7560 TA49067 are hyperfast diodes with soft recovery characteristics (tRR < 55ns). They have half the recovery time of ultrafast

RHRG75100

Abstract: RHRG7570 RHRG7580 RHRG7590
Contextual Info: RHRG7570, RHRG7580, RHRG7590, RHRG75100 Data Sheet 75A, 700V - 1000V Hyperfast Diodes RHRG7570, RHRG7580, RHRG7590 and RHRG75100 TA49068 are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ionimplanted epitaxial planar construction.

74160PC

Abstract: 74LS160 parallel counter 74LS160PC BCD Decade logic diagram 74160 74LS160D 74LS162 74LS160DC 74160 74LS162 parallel counter logic diagram of 74ls160
Contextual Info: 160 162 • CO NN ECTIO N DIAGRAM / n i * 54/74160 54LS/74LS160 S4LS/74LS162 ^ ^ 4 /7 4 1 6 2 P IN O U T A \ / ô / o ô ï o / ^S Y N C H R O N O U S PRESETTABLE BCD DECADE COUNTERS DESC R IP TIO N — The ’160 and '162 are high speed synchronous decade

tc 9310

Abstract: AN7254 AN7260 RFP15N15 TB334
Contextual Info: RFP15N15 Data Sheet October 1998 15A, 150V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

2N6784

Abstract: TB334
Contextual Info: 2N6784 Data Sheet April 1998 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET • 2.25A, 200V • rDS ON = 1.500Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device

g6n50e

Abstract: G6N50 HGTD6N40E1 HGTD6N40E1S HGTD6N50E1 HGTD6N50E1S
Contextual Info: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S 6A, 400V and 500V N-Channel IGBTs March 1997 Features Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • VCE ON : 2.5V Max. EMITTER • TFALL: 1.0µs • Low On-State Voltage COLLECTOR

la 4290

Abstract: 1E14 2E12 3E12 FRF450R4 JANSR2N7298
Contextual Info: JANSR2N7298 Formerly FRF450R4 Data Sheet Radiation Hardened, N-Channel Power MOSFET The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as

G10N50

Abstract: HGTD10N40F1 HGTD10N40F1S HGTD10N50F1 HGTD10N50F1S HGTD10N40
Contextual Info: HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S 10A, 400V and 500V N-Channel IGBTs March 1997 Features Packages • 10A, 400V and 500V HGTD10N40F1, HGTD10N50F1 JEDEC TO-251AA • VCE ON 2.5V Max. • TFALL ≤1.4µs EMITTER COLLECTOR GATE • Low On-State Voltage

G20N50c

Abstract: g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254
Contextual Info: HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance

diode 10a 400v

Abstract: 200v dc motor igbt ultrafast diode 10a 400v 10N40F1D ge 047 TRANSISTOR HGTP10N40F1D HGTP10N50F1D 10N50F1
Contextual Info: HGTP10N40F1D, HGTP10N50F1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4µs COLLECTOR GATE • High Input Impedance

Contextual Info: FSTYC9055D, FSTYC9055R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Contextual Info: JANSR2N7438 Semiconductor Data Sheet Formerly Available As FSL913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

1E14

Abstract: 2E12 FSL923A0R4 JANSR2N7439
Contextual Info: JANSR2N7439 Data Sheet Formerly Available As FSL923A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

1E14

Abstract: 2E12 FSF254R4 JANSR2N7407
Contextual Info: JANSR2N7407 Data Sheet Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

FSS913A0R4

Abstract: 2E12 JANSR2N7440
Contextual Info: JANSR2N7440 Data Sheet Formerly Available as FSS913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.