TAA 761 APPLICATION Search Results

TAA 761 A

Abstract: 85280-X 814100 TAA 761 Application fujitsu 814100 B8528
Contextual Info: M ay 1990 IP R O D U C T p r o f il e FUJITSU : MB85280-80/-10/-12 CMOS 4M X 8 FAST PAGE MODE DRAM MODULE The Fujitsu M B 85280 is a fully decoded, C M O S dynam ic random access m em ory D R A M m odule consisting o f eight M B814100 devices. The M B85280 is optim ized fo r tho se applications requiring high speed, high

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-428000A32 S E R IE S 8M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-428000A32 series is a 8 388 608 words by 32 bits dynamic RAM module on which 16 pieces of 16M DRAM uPD 4217400 are assembled.

Contextual Info: ROHM CO LT D 4oe d m T a e a 'm ooom a? I C / M e m o r y ICs s b irh h BR2865A 'T-4L-/3-2~ 7 8K X 8 fcf-y K 5V EEPROM 8K X 8 Bit 5V EEPROM •W fi^ ife E l/D im e n s io n s U n it: mm BR2865A ( i, 8192 X 8 M "j (EEPROM) T 'f « U, Betti y ? RAM tmmzti k?

tantalum Capacitor A8 Jh

Contextual Info: 21014 1M 262,144 x 4 DYNAMIC RAM WITH FAST PAGE MODE • Performance Range Parameter 21014-07 21014-08 Units tRAC Access Time from RAS 70 80 ns *CAC Access Time from CAS 20 25 ns tRC Read Cycle Time 130 160 ns Symbol ■ Fast Page Mode Operation ■ Single 5V ±10% Power Supply

Contextual Info: SAHSUN6 ELECTRONICS INC b?E ]> WË TlbMlME 0 0 1 b 0 ? l KM41C16100L T'îS • sriGK CMOS DRAM 16M X1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C16100L is a CMOS high speed 16,777,216 x 1 Dynamic Random Access Memory. Its de­

Contextual Info: KM44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION * Perform ance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: HIGH-SPEED 4K x 9 DUAL-PORT STATIC RAM IDT7014S Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • High-speed access — Military: 20/25/35ns max. — Commercial: 12/15/20/25ns (max.)

AN 7112E

Contextual Info: FUJITSU MICROELECTRONICS F U JIT SU 53E D 3 7 417b2 PROGRAMMABL SCHOTTKY? 256!-B ll READ?ONÜfMEMOR’ QQDÖ737 MB MB MB MB ñ 7111E/H 7112E/H/Y 7111L 7112L March 1986 Edition 2.0 SCHOTTKY 256 BIT DEAP PROM 32 WORDS x 8 BITS The Fujitsu MB 7111 and MB 7112 are high speed Schottky T T L electrically

Contextual Info: IBM11M2645H 2M x 64 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 2Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc pins)

Contextual Info: MH8M40AJD-6,-7 FAST PAGE MODE 335544320-BIT 8388608-WORD BY 40-BIT DYNAMIC RAM DESCRIPTION The M H 8 M 4 0 A J D is 8 3 8 8 6 0 8 -w o rd x 4 0 -b it d yna m ic R AM . PIN CONFIGURATION (TOP VIEW) [Both side, 2-Layer] This c o n s is ts o f tw e n ty in d u s try sta n d a rd 4 M x 4 d ynam ic

34P3210

Abstract: pdcr 921 "tape storage"
Contextual Info: Ai ABRIDGED VERSION s im tis u s k m s A TDK Group /C o m p any SSI 34P3210 Read Channel for High Density Floppy and Tape Storage Advance Information February 1996 FEATURES DESCRIPTION Complete zoned recording application support The SSI 34P3210 is a high performance BiCMOS

KM428C128

Contextual Info: PRELIMINARY CMOS VIDEO RAM KM428C128 SAMSUNG ELECTRONICS INC 7 = ^ 4 1 4 2 OaiGbMb T 42E D 128KX8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 128K X 8 bits RAM port 256 X 8 bits SAM port • Performance The Samsung KM 428C128 is a CMOS 12 8 K X 8 bit Dual

SMB122N

Abstract: L7 diode QFN-64 thermistor R53 schematic diagram 48v battery charger lead QFN PACKAGE thermal resistance 12V to 42V hi amps dc dc converter step-up 12V to 48V hi amp dc to dc converter step-up FDC6420 TP1429
Contextual Info: SMB122/SMB122X Eight-Channel Programmable DC-DC Power Managers with Battery Charger FEATURES & APPLICATIONS INTRODUCTION 2 • Digital programming of all major parameters via I C interface and non-volatile memory o Output voltage setpoint/margining o Sequencing & digital soft start

QFN-64

Abstract: L7 diode QFN-64 thermal resistance paddle 12V to 42V hi amps dc dc converter step-up
Contextual Info: SMB122/SMB122X Eight-Channel Programmable DC-DC Power Managers with Battery Charger FEATURES & APPLICATIONS INTRODUCTION X 2 2 1 / 2 2 1 B M S e Th y l i m a f t c u d pro d e h c a e r s a h E F I L F O D EN s i d n a r e g n o l o n . n o i t c u d o r p

toa-b21

Contextual Info: User’s Manual V850ES/HE3, V850ES/HF3, V850ES/HG3, V850ES/HJ3 32-bit Single-Chip Microcontrollers Hardware V850ES/HE3: PD70F3747 V850ES/HF3: μPD70F3750 V850ES/HG3: μPD70F3752 V850ES/HJ3: μPD70F3755 μPD70F3757 Document No. U18854EJ2V0UD00 2nd edition

Contextual Info: Preliminary User’s Manual V850ES/JG3-U, V850ES/JH3-U 32-bit Single-Chip Microcontrollers Hardware V850ES/JG3-U PD70F3763 μPD70F3764 V850ES/JH3-U μPD70F3768 μPD70F3769 Document No. U19287EJ1V0UD00 1st edition Date Published September 2008 N 2008 Printed in Japan

nec sgp

Abstract: qb-mini2 schematic 2n 1305 taa 723 556 TIMER CIRCUIT COLLECTION DIODE 709 1334 pfc65 uPD70F3763 1120K uPD70F3768
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: TOSHIBA UC/UP fciME D • ^ 7 2 ^ DD2b7D4 725 MT0S3 FLOPPY DISK CONTROLLER 11 TC8566AF F lo p p y D is k C ontroller 1. INTRODUCTION TC8566AF is a single chip LSI for Floppy Disk controller which has VFO and other circuits with FDC chip for interfacing a processor to floppy

Contextual Info: 1, 2, 4 MEG X 64 NONBUFFERED DRAM DIMMs M IC R O N DRAM MODULE MT4LD(T 164A(X) MT8LD264A(X) MT16LD464A(X) FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JEDEC pin-out in a 168-pin, dual in-line memory module (DIMM) • 8MB (1 Meg x 64), 16MB (2 Meg x 64),

V850ES

Abstract: V850ES instruction set
Contextual Info: User’s Manual 32 V850ES/JE3-E, V850ES/JF3-E, V850ES/JG3-E User’s Manual: Hardware RENESAS MCU V850ES/Jx3-E Microcontrollers V850ES/JE3-E V850ES/JF3-E V850ES/JG3-E PD70F3826 μPD70F3830 μPD70F3834 μPD70F3827 μPD70F3831 μPD70F3835 μPD70F3828 μPD70F3832

4N500

Abstract: IC 741 cn
Contextual Info: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N

1270FW

Abstract: rtc668 Building Management System uPD70F3778 uPD70F3779 uPD70F3780 PD70F3781 uPD70F3782 uPD70F3783 cs163
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

HR5000

Abstract: U10-2 SMD CAPACITOR 1206 2.2Mf 16V smd code 12.00 Jn 1K100 NOJB107M006 FXXXX Plastic Mold CRYSTAL SMD TCJD106M050 CWR11
Contextual Info: www.avx.com AVX Tantalum and Niobium Oxide Capacitors Version 10.10 Contents SECTION 1: SURFACE MOUNT COMMERCIAL TANTALUM Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3