TAA 761 APPLICATION Search Results

TAA 761 A

Abstract: 85280-X 814100 TAA 761 Application fujitsu 814100 B8528
Contextual Info: M ay 1990 IP R O D U C T p r o f il e FUJITSU : MB85280-80/-10/-12 CMOS 4M X 8 FAST PAGE MODE DRAM MODULE The Fujitsu M B 85280 is a fully decoded, C M O S dynam ic random access m em ory D R A M m odule consisting o f eight M B814100 devices. The M B85280 is optim ized fo r tho se applications requiring high speed, high

1CE2

Abstract: TAA 761 A 82S129A Signetics Generic I fusing procedure
Contextual Info: Signetics 82S126A 82S129A 1K-Bit TTL Bipolar PROM Product Specification Military Bipolar Memory Products DESCRIPTION FEATURES APPLICATIONS The 82S126A and 82S129A are field programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing

Contextual Info: CMOS DRAM KM41C16100L 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C16100L is a CMOS high speed 16,777,216 x 1 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications

Contextual Info: PRELIMINARY PDM31038 1 Megabit 3.3V Static RAM 256K x 4-Bit Revolutionary Pinout Features Description • High-speed access times Com’l: 12, 15, 17 and 20 ns Ind’l: 15, 17 and 20 ns The PDM31038 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. This product is

tca 761

Abstract: 44C4000-6 KM44C4000
Contextual Info: CMOS DRAM KM44C4000 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-428000A32 S E R IE S 8M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-428000A32 series is a 8 388 608 words by 32 bits dynamic RAM module on which 16 pieces of 16M DRAM uPD 4217400 are assembled.

Contextual Info: ^ 0 LG GMM7408200AS/SG-6/7/8 S e m ic o n 8,388,6 o s w o r d s x 40 b i t CMOS DYNAMIC RAM MODULE C o .,L td . Features Description The G M M 7408200AS/SG is an 8M x 40 bits dynamic RAM M ODULE which is assembled 20 pieces o f 4M x 4 bit DRAMs in 24 pin SOJ

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-428000A32 SERIES 8M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-428000A32 series is a 8 388 608 words by 32 bits dynamic RAM module on which 16 pieces of 16M DRAM uPD 4217400 are assembled.

Contextual Info: ROHM CO LT D 4oe d m T a e a 'm ooom a? I C / M e m o r y ICs s b irh h BR2865A 'T-4L-/3-2~ 7 8K X 8 fcf-y K 5V EEPROM 8K X 8 Bit 5V EEPROM •W fi^ ife E l/D im e n s io n s U n it: mm BR2865A ( i, 8192 X 8 M "j (EEPROM) T 'f « U, Betti y ? RAM tmmzti k?

Contextual Info: HYMA6V32730E14HGTG 32MX72, 3.3V, 4K Ref, EDO Description The HYMA6V32730E14HGTG familiy is an 32Mx72 bits Dynamic RAM Module which is assembled 36 pieces of 16Mx4bit DRAMs in 32pin TSOP-II package and two 16bit driver ICs in 48pin TTSOP package and 8bit driver IC in

tantalum Capacitor A8 Jh

Contextual Info: 21014 1M 262,144 x 4 DYNAMIC RAM WITH FAST PAGE MODE • Performance Range Parameter 21014-07 21014-08 Units tRAC Access Time from RAS 70 80 ns *CAC Access Time from CAS 20 25 ns tRC Read Cycle Time 130 160 ns Symbol ■ Fast Page Mode Operation ■ Single 5V ±10% Power Supply

Contextual Info: SAHSUN6 ELECTRONICS INC b?E ]> WË TlbMlME 0 0 1 b 0 ? l KM41C16100L T'îS • sriGK CMOS DRAM 16M X1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C16100L is a CMOS high speed 16,777,216 x 1 Dynamic Random Access Memory. Its de­

Contextual Info: KM44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION * Perform ance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: HIGH-SPEED 4K x 9 DUAL-PORT STATIC RAM IDT7014S Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • High-speed access — Military: 20/25/35ns max. — Commercial: 12/15/20/25ns (max.)

TAA761A

Abstract: TDA4050B BPW32 TAA761 FLH101 TCA335A tda4050 TCA965 equivalent tca965 transistor bc238
Contextual Info: Light Activated Switches Appnote 33 able and adjustable in its position an efficiency maximum can be achieved. Miniature Light Barrier for a Shaft Position Encoder or a Revolution Counter Figure 2. Miniature light barriers are required for shaft position encoders,

Contextual Info: 21014 1M 262,144 x 4 DYNAMIC RAM WITH FAST PAGE MODE • Performance Range Parameter 21014-07 21014-08 Units *RAC Access Time from RAS 70 80 ns *CAC Access Time from CAS 20 25 ns tRC Read Cycle Time 130 160 ns Symbol ■ ■ ■ Fast Page Mode Operation

Contextual Info: IBM11M2645H 2M x 64 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 2Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc pins)

Contextual Info: MH8M40AJD-6,-7 FAST PAGE MODE 335544320-BIT 8388608-WORD BY 40-BIT DYNAMIC RAM DESCRIPTION The M H 8 M 4 0 A J D is 8 3 8 8 6 0 8 -w o rd x 4 0 -b it d yna m ic R AM . PIN CONFIGURATION (TOP VIEW) [Both side, 2-Layer] This c o n s is ts o f tw e n ty in d u s try sta n d a rd 4 M x 4 d ynam ic

34P3210

Abstract: pdcr 921 "tape storage"
Contextual Info: Ai ABRIDGED VERSION s im tis u s k m s A TDK Group /C o m p any SSI 34P3210 Read Channel for High Density Floppy and Tape Storage Advance Information February 1996 FEATURES DESCRIPTION Complete zoned recording application support The SSI 34P3210 is a high performance BiCMOS

KM428C128

Contextual Info: PRELIMINARY CMOS VIDEO RAM KM428C128 SAMSUNG ELECTRONICS INC 7 = ^ 4 1 4 2 OaiGbMb T 42E D 128KX8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 128K X 8 bits RAM port 256 X 8 bits SAM port • Performance The Samsung KM 428C128 is a CMOS 12 8 K X 8 bit Dual

CY7B134

Abstract: CY7B135 7B135-35 f21l 48-pin TSOP I
Contextual Info: CY7B134 CY7B135 CY7B1342 ¥ CYPRESS 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores Features Functional Description • 0.8-micron BiCMOS for high performance The CY7B134, CY7B135, and CY7B1342 are high-speed BiCMOS 4K x 8 dual-port

28c128

Contextual Info: PRELIMINARY CMOS VIDEO RAM KM428C128 1 2 8 K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 1 28K x 8 bits RAM port 256 x 8 bits SAM port • Performance The Samsung KM 428C128 is a CMOS 128 K X 8 bit Dual Port DRAM. It consists of a 1 2 8 K X 8 dynamic random

SMB122N

Abstract: L7 diode QFN-64 thermistor R53 schematic diagram 48v battery charger lead QFN PACKAGE thermal resistance 12V to 42V hi amps dc dc converter step-up 12V to 48V hi amp dc to dc converter step-up FDC6420 TP1429
Contextual Info: SMB122/SMB122X Eight-Channel Programmable DC-DC Power Managers with Battery Charger FEATURES & APPLICATIONS INTRODUCTION 2 • Digital programming of all major parameters via I C interface and non-volatile memory o Output voltage setpoint/margining o Sequencing & digital soft start

Contextual Info: SMB122/SMB122X Preliminary Information Eight-Channel Programmable DC-DC Power Managers with Battery Charger FEATURES & APPLICATIONS INTRODUCTION 2 • Digital programming of all major parameters via I C interface and non-volatile memory o Output voltage setpoint/margining