BR2864A Search Results

220V DC output

Abstract: BR2864A-250 BR2864A-300 BR2864A-350 BR2864A-450 BR2864AF-250 DIP28
Contextual Info: BR2864A 8K x 8 Bit Electrically Erasable PROM FEATURES • Fast Read Access Time: 250ns ■ 5 Volt-Only Operation Including Write ■ Fast Nonvolatile Write Cycle: 10ms Max. - Automatic Write Timeout - Internally Latched Data - Internally Latched Address - Automatic Erase Before

Contextual Info: ROHM CO LT D 4oe d m T a e a 'm ooom a? I C / M e m o r y ICs s b irh h BR2865A 'T-4L-/3-2~ 7 8K X 8 fcf-y K 5V EEPROM 8K X 8 Bit 5V EEPROM •W fi^ ife E l/D im e n s io n s U n it: mm BR2865A ( i, 8192 X 8 M "j (EEPROM) T 'f « U, Betti y ? RAM tmmzti k?

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

br6116-100

Abstract: BR2864A-350 BR93C56B BR9021A BR6264P-100 BR6116 BR2804A-250 BR2804A-450 EEPROM Capacity br6216 ic
Contextual Info: mna M o n o lith ic ICs EEPROM * Capacity bits Type Configuration (words X bits) BR93C46 BR93C46A 1K BR93CS46 BR93LC46 BR93CS6A BR93C56B BR9021A ☆BR9021B CD (/) 2K 128 X 16 BR93C66B 4K 256 X 4K 16K _ 03 64 K Supply voltage (V) 512x8 8K X X 8 8 Standby

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

br6116-100

Abstract: BR6264-12 br6264 BR6264-10 BR2804 BR6116
Contextual Info: lUMm BR6264 8K x 8 CMOS SRAM Features High-speed 100/120 ns Max. TTL compatible-all inputs and outputs Low power dissipation Common I/O using three-state outputs Standard version: Operating 90mA Max. Standby 2mA Max. Output enable and two chip enable inputs

EEPROM 2864 INTEL

Abstract: EEPROM 2864 2864 eeprom 2864 eeprom intel intel 2864 2864 rom CI EEPROM 2864 hn58064p-25 HN58064P-30 SEEQ 52B33
Contextual Info: - 76 - 2 3 6 4 m & tt £ iá g íc S l °C X4 '/ % > TAAC max (ns) TCAC max (ns) TOH ta x (ns) TO E max (ns) TO D max (ns) VDD (V) -h A SSL I DD/STAÍDBY (nA) V IL Biax (V) V IH min (V) ai C i max (pF) -h/m%n, m V O L / I VOL max (V/mA) V O H / IV O H min

RCM2008R

Abstract: 1SS299 bu24204 RCM2027 BA3422S BA843 BA6490FS da119 k2 BA6404 BA857
Contextual Info: 87 87 87 87 87 88 88 88 88 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 90 90 90 87 87 87 87 87 87 86 86 86 86 88 88 88 88 88 88 88 88 88 88 88 88 88 88 88 88 86 86 86 86 86 87 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 87 86 86 86 88 88

BR93LC46A

Abstract: BR9021B
Contextual Info: 7 f l 2 í m tí 0 0 0 7 3 0 0 M□ Lf WDHffl RHri EEPROM •Serial 3-wire Operating voltage Capacity Bit Power Organization (Word X Bit) Part No. supply (V) Read(V) Write(V) Curent consunption(Max) Write cycle Active Stand-by time(Max) <mA) Operating temp Rewritability

SLO 365 R

Abstract: BR6116-100 BR6264P-100 BR62256-70 BR28C16-150 XLS78C800P-25 BR2804A-250 BR9021A 5 m0 365 R XLS78C800P-45
Contextual Info: ROHM CO L T D 40E C ? ñ 2 ñ cm D 00Q3537 IRHM 1 B Memory ICs • EEPROM * Under Development Capacity bits Type BR93C46 BR93C46A BR93CS46 1K « ☆BR93C56A ☆ BR93C56B 2K BR9021A tf) Configuration Max. access Min. cycle Supplyvoilage Max currentconsumption(mA) Re.vritecycles Data life