br6116-100
Abstract: BR2864A-350 BR93C56B BR9021A BR6264P-100 BR6116 BR2804A-250 BR2804A-450 EEPROM Capacity br6216 ic
Contextual Info: mna M o n o lith ic ICs EEPROM * Capacity bits Type Configuration (words X bits) BR93C46 BR93C46A 1K BR93CS46 BR93LC46 BR93CS6A BR93C56B BR9021A ☆BR9021B CD (/) 2K 128 X 16 BR93C66B 4K 256 X 4K 16K _ 03 64 K Supply voltage (V) 512x8 8K X X 8 8 Standby
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br93c46br93c46abr93cs46br93lc46+14br93cs6abr93c56bbr9021abr9021bbr93c66b512x8br6116-100br2864a-350br6264p-100br6116br2804a-250br2804a-450eeprom capacitybr6216 ic
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uPD23C4000
Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A
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64kx4km424c64mt42c4064upd41264+16upd42264hm53461tms446164kx8256kx4km428c64upd23c400093c46 atmelsony cross referenceatmel 93c66hn62404p93c46lrom at29c010hitachi sram cross referencex2864aupd23c2000
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41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page
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41c25641c25741c25841c464+1441c46641c100041c100244c25644c25841c4000tc55b8128424170 neccy7019944c1000iot7164hn62308bphn62404ptc5116100
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TC55B8128
Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6
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tc511001tc514101514170b514280b+16tc5316200pkm2x16100km23c16000gkm23c16100gkm23c16000fpkm23c16100fptc55b8128km23c4000agtc534000afhn62308bptc551632hitachi crossmb8368512uhitachi 64k dramtc55b4256
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RCM2008R
Abstract: 1SS299 bu24204 RCM2027 BA3422S BA843 BA6490FS da119 k2 BA6404 BA857
Contextual Info: 87 87 87 87 87 88 88 88 88 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 90 90 90 87 87 87 87 87 87 86 86 86 86 88 88 88 88 88 88 88 88 88 88 88 88 88 88 88 88 86 86 86 86 86 87 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 87 86 86 86 88 88
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2n39062n39462n39472n4059+16n40602n40612n40622n41232n41242n4125rcm2008r1ss299bu24204rcm2027ba3422sba843ba6490fsda119 k2ba6404ba857
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al 232 nec
Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258
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km41c256km41c257km41c258km41c464+16km41c466km41c1000km41c1001km41c1002km44c256km44c258al 232 nectc55b4257mb832001nm9306eeprom cross referenced41264tc5116100hn28c256nm9307oki cross reference
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SLO 365 R
Abstract: BR6116-100 BR6264P-100 BR62256-70 BR28C16-150 XLS78C800P-25 BR2804A-250 BR9021A 5 m0 365 R XLS78C800P-45
Contextual Info: ROHM CO L T D 40E C ? ñ 2 ñ cm D 00Q3537 IRHM 1 B Memory ICs • EEPROM * Under Development Capacity bits Type BR93C46 BR93C46A BR93CS46 1K « ☆BR93C56A ☆ BR93C56B 2K BR9021A tf) Configuration Max. access Min. cycle Supplyvoilage Max currentconsumption(mA) Re.vritecycles Data life
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00q3537br93c4664x16br93c46a+15br93cs46br93c56abr93c56bbr9021abr9021bbr93c66aslo 365 rbr6116-100br6264p-100br62256-70br28c16-150xls78c800p-25br2804a-2505 m0 365 rxls78c800p-45
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