BR6116-12
Abstract: BR6116
Contextual Info: BR6116 / BR6116F 2K x 8 High Speed CMOS SRAM Features • Single 5V supply and high density 24 pin package ■ Directly TTL compatible: All inputs and outputs ■ High speed: Fast access time ■ Pin Compatible with standard 16K EPROM/Mask ROM ■ Equal access and cycle time
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br6116br6116f90ns/120ns250mw+6br6116-09/-12br6116f-09/-12384-bitbu16f-0924-pinbr6116-12
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BR6116-12
Abstract: BR6116 br6116f-12 BR6116-09 XACS
Contextual Info: lumm BR6116/BR6116F 2K X 8 High Speed CMOS SRAM Features • Single 5V supply and high density 24 pin package ■ Directly TTL compatible: ■ High speed: ■ Pin Com patible with standard 16K EPROM/Mask ROM 90ns/120ns max. ■ Equal access and cycle time
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br6116br6116f90ns/120ns250mw+8br6116-09/-12br6116f-09/-12384-bit00s0bscbr6116-12br6116f-12br6116-09xacs
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br6116-100
Abstract: BR2864A-350 BR93C56B BR9021A BR6264P-100 BR6116 BR2804A-250 BR2804A-450 EEPROM Capacity br6216 ic
Contextual Info: mna M o n o lith ic ICs EEPROM * Capacity bits Type Configuration (words X bits) BR93C46 BR93C46A 1K BR93CS46 BR93LC46 BR93CS6A BR93C56B BR9021A ☆BR9021B CD (/) 2K 128 X 16 BR93C66B 4K 256 X 4K 16K _ 03 64 K Supply voltage (V) 512x8 8K X X 8 8 Standby
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br93c46br93c46abr93cs46br93lc46+14br93cs6abr93c56bbr9021abr9021bbr93c66b512x8br6116-100br2864a-350br6264p-100br6116br2804a-250br2804a-450eeprom capacitybr6216 ic
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br6116-100
Abstract: BR6264-12 br6264 BR6264-10 BR2804 BR6116
Contextual Info: lUMm BR6264 8K x 8 CMOS SRAM Features High-speed 100/120 ns Max. TTL compatible-all inputs and outputs Low power dissipation Common I/O using three-state outputs Standard version: Operating 90mA Max. Standby 2mA Max. Output enable and two chip enable inputs
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100pabr6264br6264-10l/12l28-pin+10536-bitbpd1000j-p9bpd1000j-p8bpd0256j-p9bpd0256j-p8br6116-100br6264-12br6264-10br2804br6116
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MK4802
Abstract: BR6116-100 BR6116-45 MK48Z02 CDM6116A-9 F3528-35 24PIN CY7C128-45 CY7C128-55 CY7C128A-15
Contextual Info: - 16 K X nMOS 'f S t a t i c f RAM iî 2 0 4 8 x 8 « % it £t OC) TAAC aax (ns) TCAC (us) TOE max (ns) TOH min (ns) TOD max (ns) TWP «in (ns) TDS •in (ns) TDH min (ns) TWD min (ns) TWR max (ns) V D D or V C C (V) A M ¿&&ÍEH m 2 4 P I N IDD aax (ibA)
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24pinam9128-15aa9128-20cy7c128-35+13cy7c128-45cy7c128-55cy7c128a-20cy7c128a-25cy7c12m-35cy7c128a-45mk4802br6116-100br6116-45mk48z02cdm6116a-9f3528-35cy7c128a-15
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BR6116-100
Abstract: inverter welder schematic BR6116-45 CDM6116A-3 CMD6116-1 24PIN CDM6116A-9 CMB6116-2 UPD446 CDM6116
Contextual Info: - 48 - 16 K m % it £ ÍS KSI OC A TMC max ns) KAC max (ns) 4 CMOS - , TOE max (ns) TOH din (ns) * y TOD max (ns) y S t a t i c RAM (2 0 4 8 x 8 ) n m TtfP T U S itin min (n¡;) (as) TDH rain (ns) TfD (ns) Tffl max (ns) V D D or V C C (V) 24P I N 6 II A
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2048x824pin5116s/l-105116s/l-12+14br6116-100cy7c128-35cy7c128-45cy7c128-55cy7c128a-20cy7c128a-25inverter welder schematicbr6116-45cdm6116a-3cmd6116-1cdm6116a-9cmb6116-2upd446cdm6116
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RCM2008R
Abstract: 1SS299 bu24204 RCM2027 BA3422S BA843 BA6490FS da119 k2 BA6404 BA857
Contextual Info: 87 87 87 87 87 88 88 88 88 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 90 90 90 87 87 87 87 87 87 86 86 86 86 88 88 88 88 88 88 88 88 88 88 88 88 88 88 88 88 86 86 86 86 86 87 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 87 86 86 86 88 88
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2n39062n39462n39472n4059+16n40602n40612n40622n41232n41242n4125rcm2008r1ss299bu24204rcm2027ba3422sba843ba6490fsda119 k2ba6404ba857
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SLO 365 R
Abstract: BR6116-100 BR6264P-100 BR62256-70 BR28C16-150 XLS78C800P-25 BR2804A-250 BR9021A 5 m0 365 R XLS78C800P-45
Contextual Info: ROHM CO L T D 40E C ? ñ 2 ñ cm D 00Q3537 IRHM 1 B Memory ICs • EEPROM * Under Development Capacity bits Type BR93C46 BR93C46A BR93CS46 1K « ☆BR93C56A ☆ BR93C56B 2K BR9021A tf) Configuration Max. access Min. cycle Supplyvoilage Max currentconsumption(mA) Re.vritecycles Data life
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00q3537br93c4664x16br93c46a+15br93cs46br93c56abr93c56bbr9021abr9021bbr93c66aslo 365 rbr6116-100br6264p-100br62256-70br28c16-150xls78c800p-25br2804a-2505 m0 365 rxls78c800p-45
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