LD261 Search Results

SFH317-2

Abstract: SFH317-4 SFH501-2 SFH317F-4 sfh309-2 BP103-5 SFH309-3 BPY62-2 SFH317 LPT 80a
Contextual Info: Phototransistors Package Outline Part Typ* H«K Photocurrant Angl« XuSSOmn C ofttdor Emftter Vce-SV » V lreE(niA) SFH320-2 SFH320-3 L fc SFH320F-2 SFH320F-3 16-32 JiA SMTTOP-LED SMTTOPLED, daylight filter ±60” BP103B-4 SFH303-2 SFH303-3 SFH303-4 SFH303F-2

LD261-4

Abstract: LD261-5 LD269 lfl-10
Contextual Info: SIEMENS CMPNTS-i OPTO 25E D • âS3b3Sb 0G04E3S LD 261 SERIES S IE M E N S IN F R A R E D EMITTER SINGLE AND ARRAYS -40 to +80 Storage Temperature Soldering Temperature Distance from soldering joint FEATURES • Low Cost • Miniature Size • Available As Single Unit, LD 261 and

Contextual Info: SIEMENS LD 261 LD 262—269/260 s in g l e d io d e arrays Infrared Emitters Dimensions in inches mm APPLICATIONS • Miniature photointerrupters • Punched tape-readers • Industrial electronics • For control and drive circuits DESCRIPTION The LD260-269 series, GaAs infrared emitting diodes,

8PX43

Abstract: SFH415T GKDb L81a SFH402-2 SFH910 SFH485 SFH462 sfh481-3 LD275
Contextual Info: Infrared Emitters Radiant Intensity Package Outline Part Number Package TVP» Half Angle Surga Currant Features Page A SFH420 SMTTOPLED ±60" SFH421 SMTTOPLED ± 60 ° 2.5-5 too GaAs, 950 nm. On tape and reel. 7-25 4-8 100 GaAIAs, 880 nm. On tape and reel.

44e 003

Contextual Info: MME D SIEMENS CMPNTSi OPTO • Û23b32b QQOSlQfl b B S I E X SIEM ENS LD 261 SERIES INFRARED EMITTER SINGLE AND ARRAYS T - m -u Package Dimensions in Inches mm Single Unit ^ ]¿ t¿ s Maximum Ratings FEATURES • Low Cost • Miniature Size • Available As Single Unit, LD 261 and

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

lg 6154

Abstract: KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64
Contextual Info: Alphanumerische Bestellnummern Q-Nummern Alphanumeric Ordering Codes (Q numbers) Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Bestellnummer lyp

Contextual Info: MME D SIEMENS CMPNTS-, OPTO • Û23b32b QQOSlOfl b M S I E X SIEM ENS LD 261 SERIES INFRARED EMITTER SINGLE AND ARRAYS T - m -u Package Dimensions in Inches mm Single Unit 'zm Maximum Ratings FEATURES • Low Cost • Miniature Size • Available As Single Unit, LD 261 and

T20 96 diode

Abstract: LD260 LD261-5/6 LD262 LD261 diode
Contextual Info: LD 261 LD 262-269/260 SINGLE DIODE ARRAYS Infrared Emitters Dimensions in Inches mm GE006367 FEATURES • GaAs IR emltterdiode, made In a liquid phase epitaxy process • High reliability • Matches BPX 80-89 photofransistors • Availability: "A” Dimension (in mm)

vqe24

Abstract: VQE14 VQE23 MB111 TIL78 VQA13 VQB28 TIL414 VQA13-1 OPTOKOPPLER
Contextual Info: RFT VQA10 Beschreibung Siemens LED, 5 mm, TSN-rot, Gehäuse diffus LS5160 rot Hewlett Packard General Instruments Telefunken Texas Instruments Toshiba Valvo HLMP-3300 (MV5753) TLUG5400 (TIL228) (TLS154) CQX51 VQA13 LED, 5 mm, rot, Gehäuse diffus klar VQA13-1 LED, 5 mm, rot, Gehäuse diffus rot LR5160 HLMP-3000 MV5054A TLUR5400 (TIL220)

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode G a A s Infrared Emitter 1 fla s h LD 261 2.8 4 not tru e to size . A p p ro x. w eigh t 0.0 3 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • G aA s-IR -Lum ineszenzdiode, hergestellt im

TIL702

Abstract: TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6
Contextual Info: m The Optoelectronics Data Book for Design Engineers T e x a s In s t r u m e n t s IMPORTANT NOTICES Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible. Tl cannot assume any responsibility for any circuits shown or

s75 transistor

Abstract: BPX81-4 Diode s75 BPX-80 BPX81 BPX80
Contextual Info: BPX81 ARRAYS BPX82-89, 80 SIEMENS SINGLE DIODE 2-10 DIP SILICON NPN PHOTOTRANSISTOR Ràckage Dimensions in Inches mm .094 (2.4) .083(2.1) Dimension “A". Mm. Max, Part Ni>. BPX82 .177 (4.6) BPX89 :» *X 8 4 •BPX85 8PX 86 •S75 (7.0) 3Î7 W 47« (12.1)

SFH400-2

Abstract: LD275-2 IR remote control SFH205 sfh910 LD274-3 LD275-3 SFH402-2 LD242-3 Gaa 725
Contextual Info: Infrared Emitters Radiant tntenarty Package Outline r r n 0 r = ~ i p t— !ï-" à i h Part Number Package Type Surge Current HaH Angle mA (t< 10|ie ) A Fealuree Paga SFH420 SMTTOPLED ±60“ 2.5-5 100 GaAs, 950 nm. On tape and reel. 7-25 SFB421 SMTTOPLED

TAA761A

Abstract: TDA4050B BPW32 TAA761 FLH101 TCA335A tda4050 TCA965 equivalent tca965 transistor bc238
Contextual Info: Light Activated Switches Appnote 33 able and adjustable in its position an efficiency maximum can be achieved. Miniature Light Barrier for a Shaft Position Encoder or a Revolution Counter Figure 2. Miniature light barriers are required for shaft position encoders,

Q62703-Q66

Abstract: LD 263
Contextual Info: IR-Lumineszenzdioden Infrared Emitters 1. GaAs-IRED 1. GaAs IRED 1.1 im Plastikgehäuse Xpeak = 950 nm Vf = 1 ,3 V (/f = 100 mA) 1.1 in plastic package (Xpeak = 950 nm) VT = 1.3 V ( / F = 100 mA) h Bestellnum m er deg. mW/sr O rdering code ±30 2 . . . 6.3