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    Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode G a A s Infrared Emitter 1 fla s h LD 261 2.8 4 not tru e to size . A p p ro x. w eigh t 0.0 3 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • G aA s-IR -Lum ineszenzdiode, hergestellt im


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