TA 7299 Search Results

CPH6414

Contextual Info: CPH6414 Ordering number : EN7299A N-Channel Silicon MOSFET CPH6414 General-Purpose Switching Device Applications Features • • Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage

D65806

Contextual Info: W So 1393 C M O S -8 5 -V O L T , 0 .6 5 -M IC R O N CM OS GATE ARRAYS NEC NEC Electronics Inc. April 1993 Description Figure 1. Sample CMOS-8 Packages NEC’s 5-volt CMOS-8 family are ultra-high performance, s u b -m ic ro n gate a rra y s , ta rg e te d fo r a p p lic a tio n s

LG color tv Circuit Diagram schematics

Abstract: texas ttl YJ 162A Texas Instruments TTL integrated circuits catalog SN74180 AC digital voltmeter using 7107 Sii 9024 MC3123 sn74ls860 SN7490AJ sn74243
Contextual Info: IN D EXES Alphanumeric • Functional/Selection Guide IN T E R C H A N G E A B ILIT Y GUIDE G E N E R A L INFORM ATION O RD ERIN G IN STRUCTIO N S AND M ECH A N ICA L D A TA 5 4 /7 4 FA M ILIE S OF CO M PATIBLE T T L C IR C U ITS 54/74 F A M IL Y SSI C IR C U ITS

LC7385

Abstract: U245 3003B DIP18 LC7385M 7385M 3-0033 3003c Q1/KAPPA 235
Contextual Info: 注文コードNo. N 3003C No. 3003C 72998 半導体ニューズ No.3003B とさしかえてください。 CMOS LSI LC7385,7385M −DTMFレシーバ である。

2n6080

Abstract: 2N6083 2N6081 2N6084 2N6082 Thomson-CSF
Contextual Info: SOLID STATE MICROWAVE 2N 6 08 0 2N6081 2N 6082 2N 6083 2N 6 08 4 THOMSON-CSF COMPONENTS CORPORATION MontgomeryyiUe, PA 18936 • 215 362-8500 ■ TWX 510-661-7299 VHF COMMUNICATIONS TRANSISTOR DESCRIPTION: This line o f epitaxial silicon NPN-planar transistor is designed primarily

MT59

Abstract: 2N4428 MT 59 2N4429 2N4430 THOMSON-CSF MICROWAVE TRANSISTORS MT-59
Contextual Info: S G S — T H OMS ON 05C D SOLID STATE MICROWAVE 2N4428 2N4430 THOMSONCSF COMPONENTS CORPORATION 2N4429 2N4431 Montgomeryville, PA 18936" 215 362-8500 • TW X 510-661-7299 .75 W/1 W/2,5 W/5 W, 28 V, UHF PO W ER T R A N S IS T O R DESCRIPTION: This family o f single chip silicon transistors was designed for reliable

2N6080

Abstract: 2N6081 2N6084 2N6083
Contextual Info: S G S-THOM SON _ _ DMC I 7 ^ 5 3 ? Q 0 Q D DT 7 SOLID STATE MICROWAVE 4 | _ D _7% ’ ?5l7 2N6080 2N6081 2N6082 2N6083 2N6084 : THOMSON-CSF COMPONENTS CORPORATION : MontgomeryviUe, PA 18936 • 215 362-8500 ■ TWX 510-661-7299 VHF COMMUNICATIONS TRANSISTOR

2N3553

Abstract: 2N3375 2N3733 2N 3375
Contextual Info: s 'G S-THOMSON ÜSC D | 7T2TE37 GOQanQ 5 Ì o T ~ ? $ r ? SOLID STATE MICROWAVE 2N 3375 2N 3632 THOMSON-CSF COMPONENTS CORPORATION 2N3553 2N 3733 ‘Montgomeryville, PA 1893Ç • 215 362-8500 ■ TWX 510-661-7299 2.5 W /3.0 W /1 0 W /l 3.5 W, 28 V, DESCRIPTIO N:

2N3924

Abstract: 2N3927 2N3926 THOMSON-CSF MICROWAVE TRANSISTORS N3924
Contextual Info: S G S-THO MSON SOLID STATE MICROWAVE 2N 3924 2N 3926 2N3927 THQMSON-CSF COMPONENTS CORPORATION ;Montgomeryvilie, P A 18936 • 215 362-8500 » TWX 510-661-7299 VHF COMMUNICATIONS TRANSISTORS DESCRIPTION: These SSM devices are silicon epitaxial NPN-planar transistors which

LB1939T

Abstract: 61945
Contextual Info: 注文コードNo.N※6 1 9 4 No. N 6 1 9 4 72999 LB1939T モノリシックディジタル集積回路 1.5ch Hブリッジ定電圧/定電流ドライバIC ＬＢ１９３９Ｔは低電圧、低飽和、低消費電流の２相励磁バイポーラステッピングモータドライバである。

118-136 mhz

Abstract: sd1222-6 transistor rf vhf
Contextual Info: S G S'•TH O M SO N QSC I 7=1^237 D G Q G 17E 3 SOLID STATE MICROWAVE SD1222-6 JHOMSON-CSF COMPONENTS CORPORATION Montgomeryville, PA 18936« 215 362-8500 • TWX 510-661-7299 15 W, 28 V VHF POWER TRANSISTOR DESCRIPTION SSM device type SD 1222-6 is an epitaxial silicon NPN-planar transistor

2N5591

Abstract: 2N5590 2N5589 transistor 2N5589 2n5591_
Contextual Info: S G S-"THOMSON Q5C Q | ?cia clS 3 7 T-JS'-u 0 0 0 0 jb fl2 SOLID STATE MICROWAVE 2N 5589 2N 5590 2N5591 THOMSON-CSF COMPONENTS CORPORATION Montgomeryviile, PA 18936 • 215 362-8500 ■ T W X 510-661-7299 3 W /1 0 W /2 4 W, 12.5 V VHF POWER TRANSISTOR DESCRIPTION:

transistor 2N5

Abstract: 2N5641 2000C 2N5642 2N5643 MT-72 2n56
Contextual Info: s G S-THOMSQN ~ OSC D | 7151537 □□□Ol'lfl T J ~ 0 ^ SOLID STATE MICROWAVE 2N5641 2N 5642 THOMSON-CSF COMPONENTS CORPORATION « N5643 Montgomeryville, RA 18936 • 215 362-8500 ■ TW X 510-661-7299 ° 7 W /20 W /40 W, 28 V, VHF POWER TRANSISTOR DESCRIPTION:

2N5635

Abstract: 2N5636 2N5637 2N5637-MT72 MT-72 MT-71
Contextual Info: □ HC DT S G S-THOMSON I rv \ :7 1 2 W MICRO WAVE SOLID THOMSON-CSF COMPONENTS CORPORATION Q D 001EE ? T- ?S -0 ? 2N5635 2N5636 2N5637 ; tjyiontgómeryvillét PÀ 1g936 • (215 855-840Ò ■ TWX 510-661-7299 UHF COMMUNICATIONS TRANSISTOR DESCRIPTION:

ST3232ECDR

Abstract: 15KV SSOP16 ST3232E TSSOP16
Contextual Info: ST3232E ±15KV ESD-PROTECTED, 3 TO 5.5V, LOW POWER, UP TO 250KBPS, RS-232 DRIVERS AND RECEIVERS • ■ ■ ■ ■ ■ ESD PROTECTIO FOR RS-232 I/O PINS ±15KV HUMAN BODY MODEL ±8KV IEC 1000-4-2 CONTACT DISCHARGE 300µA SUPPLY CURRENT 250Kbps MINIMUM GUARENTEED DATA

15KV

Abstract: SSOP16 ST3232E TSSOP16
Contextual Info: ST3232E ±15kV ESD-Protection, 3 to 5.5V, low power, up to 250KBPS, RS-232 drivers and receivers Feature summary • ESD protection for RS-232 I/O pins ■ ±15KV human body model ■ ±8KV IEC 1000-4-2 contact discharge ■ 300µA supply current ■ 250Kbps minimum guaranteed data rate

IEC1000-4-2

Abstract: SSOP16 ST3232E ST3232EB ST3232EC TSSOP16
Contextual Info: ST3232EB ST3232EC ± 15 kV ESD protection 3 to 5.5 V low power, up to 250 kbps, RS-232 drivers and receivers Features • ESD protection for RS-232 I/O pins ■ ±15 kV human body model ■ ±8 kV IEC 1000-4-2 contact discharge ■ 300 µA supply current ■

Contextual Info: ST3232E ±15kV ESD-Protection, 3 to 5.5V, low power, up to 250KBPS, RS-232 drivers and receivers Feature summary • ESD protection for RS-232 I/O pins ■ ±15KV human body model ■ ±8KV IEC 1000-4-2 contact discharge ■ 300µA supply current ■ 250Kbps minimum guaranteed data rate

RS232 TTL self powered

Abstract: IEC1000-4-2 SSOP16 ST3232E ST3232EB ST3232EC ST3232ECDR TSSOP16
Contextual Info: ST3232EB ST3232EC ± 15 kV ESD protection 3 to 5.5 V low power, up to 250 kbps, RS-232 drivers and receivers Features • ESD protection for RS-232 I/O pins ■ ±15 kV human body model ■ ±8 kV IEC 1000-4-2 contact discharge ■ 300 µA supply current ■

CPH6414

Contextual Info: Ordering number : ENN7299 CPH6414 N-Channel Silicon MOSFET CPH6414 Ultrahigh-Speed Switching Applications Preliminary Features • • Low ON-resistance. Ultrahigh-speed switcing. 4V drive. unit : mm 2151A [CPH6414] 0.15 2.9 5 4 0.6 6 0.2 • Package Dimensions

Si4894BDY

Abstract: 4113-4
Contextual Info: Si4894BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET D 100% Rg Tested ID (A) rDS(on) (W) 0.011 @ VGS = 10 V 12 0.016 @ VGS = 4.5 V 9.8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View

Si7806ADN

Abstract: 41645
Contextual Info: Si7806ADN New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.011 @ VGS = 10 V 14 0.016 @ VGS = 4.5 V 12 D TrenchFETr Power MOSFET D PWM Optimized D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile

LA1140

Abstract: LA1230 IF transformers 10.7 mhz FM stereo radio circuit la1140 la3370 24782 cbtkac-24782 sanyo la1230 inverter diagram sumida 72915
Contextual Info: Ordering number: EN 729E Monalithic Linear IC LA1140 FM IF System for Car Radio Package Dimensions Overview The LA1140 is an IF system IC designed for FM car stereo receivers. It features versatile muting characteristics and allows receiver designers to realize the muting performance according

Contextual Info: Si7806ADN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 14 0.016 @ VGS = 4.5 V 12 D TrenchFETr Power MOSFET D PWM Optimized D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile