SI4894BDY Search Results
SI4894BDY Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI4894BDY | Vishay Siliconix | MOSFETs | Original | 54.19KB | 5 | ||
| SI4894BDY | Vishay Telefunken | N-channel 30-v (d-s) Mosfet | Original | 31.43KB | 1 | ||
| SI4894BDY-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8.9A 8-SOIC | Original | 9 | |||
| SI4894BDY-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8.9A 8-SOIC | Original | 9 |
SI4894BDY Price and Stock
Vishay Intertechnologies SI4894BDY-T1-GE3Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 9.5A; Idm: 40A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4894BDY-T1-GE3 | 2,500 |
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SI4894BDY-T1-GE3 | Ammo Pack | 1 |
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| SI4894BDY-T1-GE3 | Tape & Reel | 52 Weeks | 2,500 |
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SI4894BDY-T1-GE3 | 3,182 |
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SI4894BDY-T1-GE3 | Cut Tape | 5 | 1 |
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| SI4894BDY-T1-GE3 | Tape & Reel | 2,500 |
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SI4894BDY-T1-GE3 | 4,084 | 1 |
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SI4894BDY-T1-GE3 | 3,267 |
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| SI4894BDY-T1-GE3 | 3,267 |
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SI4894BDY-T1-GE3 | 53 Weeks | 2,500 |
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Vishay Intertechnologies SI4894BDY-T1-E3Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 9.5A; Idm: 40A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4894BDY-T1-E3 | 2,500 |
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SI4894BDY-T1-E3 | 2,500 | 2,500 |
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SI4894BDY-T1-E3 | Tape & Reel | 52 Weeks | 2,500 |
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SI4894BDY-T1-E3 | 3,925 |
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SI4894BDY-T1-E3 | Tape & Reel | 2,500 |
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| SI4894BDY-T1-E3 | Cut Tape | 2,500 |
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SI4894BDY-T1-E3 | Reel | 2,500 |
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SI4894BDY-T1-E3 | 514 | 1 |
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SI4894BDY-T1-E3 | 411 |
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| SI4894BDY-T1-E3 | 411 |
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SI4894BDY-T1-E3 | 54 Weeks | 2,500 |
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SI4894BDY-T1-E3 | 53 Weeks | 2,500 |
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Vishay Siliconix SI4894BDY-T1-E3SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 8.9A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4894BDY-T1-E3 | 1,980 |
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Vishay Intertechnologies SI4894BDY-T1-E3-PBF |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4894BDY-T1-E3-PBF | 874 |
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Vishay Intertechnologies SI4894BDYT1GE330-V N-CHANNEL (D-S) MOSFET Small Signal Field-Effect Transistor, 8.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4894BDYT1GE3 | 3,915 |
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Get Quote | |||||||
SI4894BDY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si4894BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 12 0.016 at VGS = 4.5 V 9.8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested |
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si4894bdysi4894bdy-t1-e3si4894bdy-t1-ge311-mar-11 | |
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Contextual Info: Si4894BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 12 0.016 at VGS = 4.5 V 9.8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested |
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si4894bdysi4894bdy-t1-e3si4894bdy-t1-ge32002/95/ec+3 | |
Si4894BDYContextual Info: SPICE Device Model Si4894BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si4894bdys-60245rev20-feb-06 | |
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Contextual Info: Si4894BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 12 0.016 at VGS = 4.5 V 9.8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested |
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si4894bdysi4894bdy-t1-e3si4894bdy-t1-ge32011/65/eu+2 | |
Si4894BDY
Abstract: Si4894BDY-T1-E3 Si4894BDY-T1-GE3 si4894bdyt1e3
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si4894bdysi4894bdy-t1-e3si4894bdy-t1-ge318-jul-08+1 | |
s41134Contextual Info: Si4894BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET D 100% Rg Tested ID (A) rDS(on) (W) 0.011 @ VGS = 10 V 12 0.016 @ VGS = 4.5 V 9.8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View |
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si4894bdysi4894bdy--e3si4894bdy-t1--e308-apr-05+1 | |
4468
Abstract: AN609 Si4894BDY 74598
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si4894bdyan60901-jun-074468+1 | |
Si4894BDY
Abstract: Si4894BDY-T1-E3
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si4894bdysi4894bdy-t1-e308-apr-05 | |
Si4894BDY
Abstract: Si4894BDY-T1-E3
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si4894bdysi4894bdy-t1-e308-apr-05 | |
SI4894DY-T1-E3
Abstract: Si4894BDY-T1-E3 Si4894BDY Si4894DY Si4894DY-T1
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si4894bdysi4894dysi4894bdy-t1si4894dy-t1+3 | |
SI4894DY
Abstract: SI4894DY-T1-E3 SI4894BDY Si4894BDY-T1-E3 Si4894DY-T1
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si4894bdysi4894dysi4894bdy-t1si4894dy-t1+4 | |
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Contextual Info: New Product Si4894BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 12 0.016 at VGS = 4.5 V 9.8 • TrenchFET Power MOSFET • 100 % Rg Tested RoHS COMPLIANT D SO-8 S 1 8 D S 2 7 |
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si4894bdysi4894bdy-t1-e318-jul-08 | |
Si4894BDYContextual Info: SPICE Device Model Si4894BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si4894bdy18-jul-08 | |
Si4894BDY
Abstract: Si4894BDY-T1-E3 Si4894BDY-T1-GE3
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si4894bdysi4894bdy-t1-e3si4894bdy-t1-ge311-mar-11 | |
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5a 12v dc dc converterContextual Info: LTC2978A 8-Channel PMBus Power System Manager Featuring Accurate Output Voltage Measurement Description Features n n n n n n Sequence, Trim, Margin and Supervise Eight Power Supplies Manage Faults, Monitor Telemetry and Create Fault Logs PMBus Compliant Command Set |
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ltc2978a16-bit2978af14-bit+2 | |
RTL8192
Abstract: RTL819 abc c789 100uf 10p MEC1308-NU BA59-02570A tps51620 w192 BA41-01100A rtl-8192 mec1308
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ba68-10150bba81-06661aba81-06662aba81-06663a+16 | |
c5129
Abstract: C5149 C5148 88E8001 CPUTEST29H D4203 D4004 u6202 R6130 R6503
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usb/ac97/smb1394/sdalc880rj45/11/mdc+16 | |
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Contextual Info: LTC2977 8-Channel PMBus Power System Manager Featuring Accurate Output Voltage Measurement Description Features Sequence, Trim, Margin and Supervise Eight Power Supplies n Manage Faults, Monitor Telemetry and Create Fault Logs n PMBus Compliant Command Set |
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ltc2977c14-bitltc297416-bit+3 | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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p462-ndp463-ndlng295lfcp2ulng395mftp5u+11 | |
BS250KL-TR1-E3
Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
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si3865bdv-t1-e3ct-ndsi4720cy-t1-e3ct-ndsi6924aedq-t1-e3ct-ndsi1040x-t1-e3tr-nd+16 | |
FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
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gp-20fsq510 equivalentbta12 6008bta16 6008+7 | |
irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
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element-14f155-6af155-10af165-15a+11 | |
Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
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cy8c38cy8c29incl79512t9797+16 | |
LTC2978AIUP#PBF
Abstract: 017VL 210 895 LTC2978AIUP LTC2978ACUP#PBF
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ltc2978a16-bit2978af14-bit+6 | |