T3301 Search Results

H440

Abstract: PTB23001X PTB23003X PTB23003XA PTB23005X OC292
Contextual Info: P T B 23001X PTB23003X PT B 2 3 0 0 5 X PTB 23003XA PHILIPS INTERNATIONAL 5L.E T> m 7 11 0 fl2ti GCmfc.42fc, fl Tb M P H I N MICROWAVE POWER TRANSISTORS NPN silicon transistors fo r use in common-base class-B power amplifiers up to 4.2 GHz. Diffused em itter ballasting resistors, interdigitated structure, m ulticell geometry, localized th ick oxide

IEC134

Abstract: PTB42001X PTB42002X
Contextual Info: 1 - 3 IN T E R N A T IO N A L SbE D • 711DêSfc. - 0 / PTB42001X PTB42002X L P H IL IP S 3 GDMmMM Ô11 ■ P H IN MICROWAVE POWER TRANSISTORS NPN silicon transistors fo r use in common-base class-B power amplifiers up to 4.2 GHz. Diffused em itter ballasting resistors, interdigitated structure, m ulticell geometry, localized th ick oxide

TRANSISTOR BC 208

Abstract: transistor bc 207 npn transistor bc 209 npn transistor bc 209 b transistor Bu 208 transistor D 2588 transistor BC 209 transistor bc 207 TRANSISTOR BC 208 B 3100U
Contextual Info: i l . •.-.— 17E D TELEFUNKEN ELECTRONIC ■ 0 1 2 0 0 ^ 0001451 1 BU 207 * BU 208 • BU 209 TTf Li(FTOKIM electronic C re itM le c h n o to g w s r - 33-07 Silicon NPN Power Transistors Applications: Horizontal deflection circuits in colour TV-receivers

TA7290

Abstract: 2N5784 equivalent TA7270 TA7272 2N5783 2N5781 92SS-4J32 2N5782 Tektronix 2712 2N5783 HARRIS
Contextual Info: H A RR IS S E M I C O N D S E C T O R 5bE D • 4 3 G 2 2 7 1 0 0 4 0 4 7 0 T46 H H A S 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 Rie Number 413 n = 3 3 -o / Silicon N-P-N and P-N-P Epitaxial-Base Complementary-Symmetry T ransistors General-Purpose Types for Switching and

Contextual Info: REVISION D DESIGNED & DIMENSIONED IN MILLIMETERS [INCHES] ERF8-XXX-XX-X-D-RA-X-TR OPTION -TR : TAPE & REEL STANDARD PACKAGING (SEE NOTE 4) J No OF POSITIONS -010, -013, -020, -025, -030, -037 -040,-049, -050, *-053, -060, *-070, *-075, (PER ROW) OPTION

PT9734

Abstract: arco 404 PT9730 Arco 403 PT9731 ARCO 0.1 Z PT9732 PT8731 9730 motorola SO 402 NH
Contextual Info: MOTOROLA SC X S T R S /R F MbE D m b 3 b ? 2 S 4 00=15143 S MOTOROLA “T SEMICONDUCTOR - 3 ^ O ( TECHNICAL DATA PT973p Series The RF Line V H F Pow er Transistors . . . designed primarily for wideband, large-signal output amplifier stages in the 30-200 MHz frequency range.

S330020

Abstract: Z330187 R330111 C330029 y330025 R330019 w330184 V330183 X330185 T330021
Contextual Info: y«\44< *> Semiconductor Fuses European Fuses DIN 000 Fuses 6,6 gRB-URB - 5 URB GERMAN STANDARD 500 - 660 V AC gRB- URB from 20 to 400 A Size: 000 EXTREMELY HIGH INTERRUPTING RATING FUSES: PROTECTION OF POWER SEMICONDUCTORS ACCORDING TO 269.1 AND 4 500- 660 V VOLTAGE RATING RATING 20 TO 400 A

IT8511TE

Abstract: asus C5915 IT8511 C3923 J6801 c7319 R5707 T8-232 T2448
Contextual Info: 5 01 D C B A 4 Block Diagram 61 02 System Setting 62 USB CONN 03 * 63 * 04 04_CPU-Merom HOST 64 ISA ROM 05 05_CPU-Merom(PWR) 65 SPI ROM 06 * 66 LED 07 07_CRESTLINE(HOST) 67 * 08 08_CRESTLINE(DMI & CFG) 68 DC & BAT IN 09 09_CRESTLINE(GRAPHIC) 69 * 10 10_CRESTLINE(DDR2)

PS8101T

Abstract: J3303 j3305 AR8121 P2003EVG ASM1442T AU-6433 RT8206 AR8131 UP7711U8
Contextual Info: 5 D 4 3 Penryn SFF BLOCK DIAGRAM ULV 2 CPU DUAL CORE: SU9400 1.4 GHz SU9300 1.3 GHz SINGLE CORE: SU3300 1.2GHz 1 CLOCK GENERATOR FAN & THERMAL SENSOR D 956 uFCBGA FSB 800MHz LVDS DDR2 667 GS45 Express CRT ON BOARD DDR2 2Gb X 8 HDMI LEVEL SHIFTER Parade PS8101T

RTM875T-336

Abstract: J6801 J6806 Q4819 M51VA 8796G IT8502 RTM875T c2335 r RT8206
Contextual Info: 5 4 3 2 UX50 CLOCK GENERATOR RTM875T-336 Penryn SFF D 1 FAN & THERMAL SENSOR 956 uFCBGA D FSB 800MHz LVDS DDR2 SDRAM 800 MHz nVIDIA NB9M-GS CRT PCIE * 16 GS45 Express 1363 uFCBGA HDMI STANDARD DDR2 DIMM STANDARD DDR2 DIMM DMI 100MHz C C SATA 2.5" HDD USB CARD READER

c5129

Abstract: C5149 C5148 88E8001 CPUTEST29H D4203 D4004 u6202 R6130 R6503
Contextual Info: 5 4 3 2 A6M 1 REVISION: 2.0 128-BIT AMD S1g1 D Unbuffer DDR2 SO-DIMM Channel A/B x16 HyperTransport 200/400/800 MHz 638 PIN PACKAGE LVDS nVIDIA Gigabit Ethernet RTL8111B PCI-E x1 CRT C51MV C TV OUT X8 /X4 HyperTransport 200/400/800 MHz BGA 468 PCMCIA 33MHz

IT8511TE

Abstract: asus 6C720 AC_IN_OC 498C0 IT8511 R5538 ALC660 U5403 ICS9LPR363AGLFT
Contextual Info: 5 01 D B A 61 02 System Setting 62 USB CONN * 63 * 04 04_CPU-Merom HOST 64 ISA ROM 05 05_CPU-Merom(PWR) 65 SPI ROM 06 * 66 LED 07 07_CRESTLINE(HOST) 67 * 08 08_CRESTLINE(DMI & CFG) 68 DC & BAT IN 09 09_CRESTLINE(GRAPHIC) 69 * 10 10_CRESTLINE(DDR2) 70 Debug CONN.

IEC134

Abstract: PTB42001X PTB42002X RTC4202X
Contextual Info: N AMER PHILIPS/DISCRETE ObE D bL53T31 0015111 7 • PTB4200ÌX PTB42002X T ­ r - 3 3 -< ? 7 MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base c!ass-B power amplifiers up to 4 ,2 GHz. . Diffused em itter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

DN000UB69V80

Abstract: DN000GB69V125V DN000UB69V100 DN000UB69V315L DN000UB69V315 DN000UB69V125 DN000UB69V350L
Contextual Info: Semiconductor fuses Semiconductor AC fuses Protistor Square-body Fuses PSC gR/aR sizes 000/00 gR/aR - 500 to 690 VAC DIN 000 GERMAN STANDARD gRB - URB from 20 to 400 A Size: 000 - EXTREMELY HIGH BREAKING CAPACITY FUSES: PROTECTION OF POWER SEMICONDUCTORS ACCORDING TO IEC 60269-1 and 4

motorola mpsu05

Abstract: MPSU06 mpsu05 MPSU07 MPS-U05 MPS-U06 MPSU-05
Contextual Info: M O T O R O L A SC i D I O D E S / O P T O J 6367255 MOTOROLA SC 34 DË"|fc.3b7aSS 0030020 34 c D IO D ES/O PTO 38028 T-33-01 S IL IC O N S M A L L -S IG N A L T R A N S IS T O R D IC E (continued) MPSUC05 die no. LINE SOURCE — DEL504 D NPN This die provides performance similar to that of the following device types:

MJF16206

Abstract: MTP12N10 pin configuration MJH16206 transistor D 1557 K1194 MJW16206 MPF930 TMJE210 ci mc7812 MC1391P
Contextual Info: MOTOROLA SC X S T R S / R F 4bE b3b7254 D 00^3470 3 T -3 2 > -O i IflOTb Order this data sheet by MJF16206/D MOTOROLA •i SEMICONDUCTOR m TECHNICAL DATA MJF16206 MJH16206 MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors

MJF16212

Abstract: MJH16212 ferroxcube P3C8 CL099 transistor equivalent 0107 NA 340B-03
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3b?£S4 ÜO^BMflO b Bin OT b MOTOROLA T '3 3 '0 1 Order this data sheet by MJH16212/D • SEMICONDUCTOR TECHNICAL DATA M JH16212 MJF16212 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution Monitors

amphenol 12 pin male circular plug

Abstract: C16-3 amphenol amphenol 2 pin male circular plug right angle 40 pin male connector JPD-1410446 t6483-001 transistor D 1002 T3361-001 U 10I01 amphenol 2 pin female circular plug
Contextual Info: Amphenol C 16-1 Catalogue ASA200005 Rev 1.A Interconnection Solution Guide Circular Connector Threaded Coupling – Plastic Designed to meet the high requirements of Industrial applications under harsh environment. Available in Screw; Solder and Crimp terminations.

E63093

Abstract: 12 pin circular din connector DIN 2248 IEC130-9 T3487000 T3361-001 T3402-009 T336-2 T3360018 T3485-001
Contextual Info: 171-2012:QuarkCatalogTempNew 8/20/12 2:13 PM Page 171 2 Circular DIN Connectors RoHS 3 4 5 5S 7 6 7 DIN 8 12 14 Straight Male Cable Connector Fig. A CIRCULAR CONNECTORS Series C091A Circular DIN Connectors — Screw Locking and EMI Shielding Straight Female

D988

Abstract: BUV26F Scans-00459 0031G73 max 1988 SWITCHING SYSTEMS INTERNATIONAL 26AF BUV26AF
Contextual Info: PHILIPS INTERNATIONAL MSB D ca 711Ga5b 0Q31G73 3 Q P H I N _ BUV26F BUV26AF J1 T - 3 3 - 0 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a S O T 186 envelope w ith electrically isolated mounting base, intended for use in converters, inverters, switching regulators, m otor control

E50R

Abstract: IEC134 LV1721E50R 7Z94095
Contextual Info: N AMER P H I L I P S / D I S C R E T E GbE~1 • □ GlM'ìfl'ì S WÊ ' LV1721Ë50R , T -3 3 -O '? A MICROWAVE LINEAR POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-emitter, class-A amplifier from 1,7 GHz to 2,1 GHz in c.w. conditions in m ilitary and professional applications.

BS000UB69V250

Abstract: BS000GB69V40
Contextual Info: Semiconductor fuses Semiconductor AC fuses Other Protistor Fuses BS88-4 Fuses 000 BS88 - 500 V to 690 VAC EXTREMELY HIGH BREAKING CAPACITY FUSES: PROTECTION OF POWER SEMICONDUCTORS AS PER IEC STANDARD 60269.1 AND 4, AND EN 60269-1 AND 4 500- 690 V VOLTAGE RATING (RATING 20 TO 400 A)

E210615

Abstract: y330025
Contextual Info: 6,9 gRB-URB DIN German Standard German Standard 500 - 690V AC gRB-URB FROM 20 TO 400A Size: 000 Features/Benefits: •• Extremely high interrupting rating •• Protection of power semiconductors according to IEC 269.1 and EN 60269.4 •• 500-690V [Rating 20 to 400A]

ITE IT8502E

Abstract: IT8502E R5U230 RT8206A SC8825 IT8301E 9LRS3197 D4802 ICS9LRS3197 MAX17028
Contextual Info: 5 4 SYSTEM PAGE REF. Content PAGE D C B 1 2 3 4 5 6 7 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 36 37 40 43 44 45 46 47 48 50 51 52 53 56 57 58 60 61 64 65 66 67 70 Block Diagram System Setting CPU 1 _DMI,PEG,FDI,CLK,MISC CPU(2)_DDR3 CPU(3)_CFG,RSVD,GND