BUV26AF Search Results

D988

Abstract: BUV26F Scans-00459 0031G73 max 1988 SWITCHING SYSTEMS INTERNATIONAL 26AF BUV26AF
Contextual Info: PHILIPS INTERNATIONAL MSB D ca 711Ga5b 0Q31G73 3 Q P H I N _ BUV26F BUV26AF J1 T - 3 3 - 0 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a S O T 186 envelope w ith electrically isolated mounting base, intended for use in converters, inverters, switching regulators, m otor control

Contextual Info: N AUER PHILIPS/DISCRETE b5E D • bb53531 0DSfl452 171 I IAPX BUV26F BUV26AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope w ith electrically isolated mounting base, intended fo r use in converters, inverters, switching regulators, m otor control

BUV26F

Abstract: BUV26AF
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUV26F/AF DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 90V(Min)- BUV26F 100V(Min)- BUV26AF ·High Switching Speed APPLICATIONS ·Designed for fast switching applications such as high

26AF

Abstract: BUV26AF BUV26F IEC134 0le30 vqe 14 display
Contextual Info: PHILIPS INT ERNATIONAL MSE » O 711Ga5b DQ31G73 3 EJPHIN BUV26F BUV26AF T-33-07 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a S O T 186 envelope w ith electrically isolated mounting base, intended for use in converters, inverters, switching regulators, m otor control

Z944

Abstract: 26AF BUV26AF BUV26F 2u45
Contextual Info: J> m b^E N AUER PHIL I P S / D I S C R E T E bb53^31 □□SÖ4SS 171 I IAPX '' BUV26F BUV26AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope w ith electrically isolated mounting base, intended fo r use in converters, inverters, switching regulators, m otor control

b0743

Abstract: KT819A B0545 BOT54 PT9784 2N3055-5 mje1660 40636 1561-0403 044VH4
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 .- 10 15 20 >= 30 PT9784A 2N3055/5 SPT3713 SOT9210 044VH1 BLW97 40325 2SC2609 ~~~~~~ 35 40 45 50 S01480 B0142 S3771 BOX13 BOX13 BOX13 40251 MJ2801 MJ2801 MJ2801 KT819A 1561-0403 1561-0404 1561-0404 BOX13/40251

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI