SI4392 Search Results

Contextual Info: Si4392ADY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 a RDS(on) () ID (A) 0.0075 at VGS = 10 V 21.5 0.0115 at VGS = 4.5 V 17.4 • • • • Qg (Typ.) 12 nC Extremely Low Qgd for Low Switching Losses

Si4392DY

Abstract: Si4392DY-T1
Contextual Info: Si4392DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFETt FEATURES D Extremely Low Qgd WFET Technology for Switching Losses D TrenchFETr Power MOSFET D 100% Rg Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.00975 @ VGS = 10 V 12.5 0.01375 @ VGS = 4.5 V

trans* 72151

Contextual Info: Si4392DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFETt FEATURES D Extremely Low Qgd WFET Technology for Switching Losses D TrenchFETr Power MOSFET D 100% Rg Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0115 @ VGS = 10 V 12.5 0.0165 @ VGS = 4.5 V

Contextual Info: Si4392DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFETt FEATURES D Extremely Low Qgd WFET Technology for Switching Losses D TrenchFETr Power MOSFET D 100% Rg Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.00975 @ VGS = 10 V 12.5 0.01375 @ VGS = 4.5 V

Si4392ADY

Abstract: Si4392ADY-T1-E3
Contextual Info: Si4392ADY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A)a 0.0075 at VGS = 10 V 21.5 0.0115 at VGS = 4.5 V 17.4 • Extremely Low Qgd WFET Technology for Low Switching Losses

trans* 72151

Abstract: 72151 Si4392DY 72151 mos-fet s t r 72151 Si4392DY-T1
Contextual Info: Si4392DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFETt FEATURES D Extremely Low Qgd WFET Technology for Switching Losses D TrenchFETr Power MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0115 @ VGS = 10 V 12.5 0.0165 @ VGS = 4.5 V

Si4392DY

Contextual Info: SPICE Device Model Si4392DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

2648

Abstract: 3271 AN609 Si4392ADY
Contextual Info: Si4392ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

trans* 72151

Abstract: Si4392DY
Contextual Info: Si4392DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFETt FEATURES D Extremely Low Qgd WFET Technology for Switching Losses D TrenchFETr Power MOSFET D 100% Rg Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0115 @ VGS = 10 V 12.5 0.0165 @ VGS = 4.5 V

Si4392DY

Contextual Info: Si4392DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) () ID (A) 0.00975 at VGS = 10 V 12.5 0.01375 at VGS = 4.5 V 10.0 • Extremely Low Qgd for Low Switching Losses • TrenchFET Power MOSFET

Si4392ADY

Abstract: Si4392ADY-T1-E3 SI4392
Contextual Info: Si4392ADY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A)a 0.0075 at VGS = 10 V 21.5 0.0115 at VGS = 4.5 V 17.4 • Extremely Low Qgd WFET Technology for Low Switching Losses

Si4392DY

Abstract: Si4392DY SPICE Device Model
Contextual Info: SPICE Device Model Si4392DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4392DY

Contextual Info: Si4392DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.00975 at VGS = 10 V 12.5 0.01375 at VGS = 4.5 V 10.0 • Extremely Low Qgd WFET Technology for Switching Losses • TrenchFET® Power MOSFET

Contextual Info: Si4392ADY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY rDS on (W) ID (A)a 0.0075 @ VGS = 10 V 21.5 0.0115 @ VGS = 4.5 V 17.4 VDS (V) 30 Qg (Typ) 12 nC D Extremely Low Qgd WFETr Technology for Low Switching Losses

Contextual Info: Si4392DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) () ID (A) 0.00975 at VGS = 10 V 12.5 0.01375 at VGS = 4.5 V 10.0 • Extremely Low Qgd for Low Switching Losses • TrenchFET Power MOSFET

Si4392DY

Abstract: 72151 transistor Si4392DY-T1 Si4392DY-T1-E3 SI4392 trans* 72151
Contextual Info: Si4392DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.00975 at VGS = 10 V 12.5 0.01375 at VGS = 4.5 V 10.0 • Extremely Low Qgd WFET Technology for Switching Losses • TrenchFET® Power MOSFET

20658

Abstract: 3271 AN609 Si4392DY 73823
Contextual Info: Si4392DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4392DY

Abstract: si4392
Contextual Info: SPICE Device Model Si4392DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4392ADY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY rDS on (W) ID (A)a 0.0075 @ VGS = 10 V 21.5 0.0115 @ VGS = 4.5 V 17.4 VDS (V) 30 Qg (Typ) 12 nC D Extremely Low Qgd WFETr Technology for Low Switching Losses

ni usb 6212

Abstract: SS-00259-1 C2060 C2055 C2068 quanta C2096 R2067 915GM SW1010CPT
Contextual Info: 1 2 3 4 5 478 PIN micro FC-PGA 14, 15, 15w , 17w inch XGA, SXGA+ A LVDS LCD P7 P3,4 400/533 MHz A LVDS Alviso DVI M24/M26 UNBUFFERED DDRII SODIMM DDRII 400/533 P10 915GM/PM R/G/B CRT P9 R/G/B UNBUFFERED DDRII SODIMM DDRII 400/533 1257 PIN (micro FCBGA) PCIE 16Lanes

l9122

Abstract: IT8510 asus RC415ME 12G140001089 ATI SB600 CON3603 RC415M ISL6262CRZ foxconn
Contextual Info: 5 4 3 2 1 T12R Block Diagram FAN + SENSOR MAX6657MSA PAGE 4 V2.0 CLOCK GEN ICS951463 CPU YONAH-CM D PAGE 5 DISCHARGER CIRCUIT D PAGE 37 PAGE 2,3 Power On Sequence FSB 533MHz PAGE 40 DC/BATT IN LVDS & INV ATI RC415M PAGE 12 CRT & TV OUT PAGE 13 PAGE 41 DDR2-533

MCP67MV

Abstract: RTS5117 MCP67MV- A2 12VSUS IT8511TE D1703 D1804 D1803 asus F9DC
Contextual Info: 5 4 3 2 1 F9DC BLOCK DIAGRAM THERMAL SENSOR G781 BATTERY TYPE Page 5 D D 3S1P 3S2P FAN CTRL Page 5 AC & BAT CON Page 47 CPU S1g1 GDDR2 16Mx16 x4 DDR2 16M*16-2.5 1.8V Page42 INFINEON DDR2 SDRAM 667MHz Page2,3,4 DDR2 667 SODIMM X2 +1.8V +0.9VS Page11,12,13

TAIMAG HD 081 A

Abstract: ce-0702 TAIMAG HA 003 1C-8100 ALC660 CE-0703 0845a asus sw3205 R3627
Contextual Info: 5 4 3 2 1 G1S: MEROM/965-PM/ICH8-M/NB8P-GS BLOCK DIAGRAM CLOCK GEN CK505 ICS9LPR363CGLF-T D Merom CPU FAN + THERMAL SENSOR 478B uFCPGA VRAM CH.C GDDR3 *2 LVDS PAGE 45 PAGE 46 PAGE 50 FSB 800 MHz 136 FBGA PAGE 72 NVIDIA NB8P-GS CRT PAGE 3-6 VRAM CH.A GDDR3 *2

mcp67m

Abstract: MCP67MV MCP67D MCP67MV- A2 c5304 asus nvidia mcp67 MCP67 C9236 ricoh r5c833
Contextual Info: A B C D E A8N_A8Dc AMD/MCP67MV/MCP67D BLOCK DIAGRAM 1 BATTERY TYPE Sub block Diagram / BOM option 1 3S2P 64 POWER SEQENCE 2 . CPU CPU CAP 5 AMD Turion 64 F/G DDR2 533/667/800 SODIMM X2 3,4 LFB 2 LFB LFB HOST BUS DVI Dual CH. 47 CRT & TV CON 46 LFB VGA CON