T02S Search Results

AGE Module

Contextual Info: MilitaryAerospace Division Military-Aerospace Division PowerM OS IV herm etic M O SFET s BVdss V R d s(O N ) lD(C on t) (/> ) PD (W ) ^is^(pF) Q g(nC ) P ack age Flat pack (FN) T02S8 (HN ) T0254 (CN) Pow er m od ules for high rei applications Sem elab’s 4th Generation M O SFE T s, bipolar

U3158

Abstract: stanag LISTING 4093 N JANTXV 2N2880 equivalent
Contextual Info: MîlitaryAerospace Division Military-Aerospace Division introduction and quality approvals jÊÈÈÊÊDim*, T02S8 Since its e s ta b lis h m e n t as a m anufacturer, Sem elab has specialised in the fabrication of very high quality products especially intended

T0220

Abstract: D-PAK BUF654 DPAK TDI30 BUD630
Contextual Info: T em ic S e m i c o n d u c t o r s T02S2 DPAK T0251 DPAK T0220 Bipolar Power Transistors Maximum Ratings Part Number Plot at Tease W °c Electrical Characteristics k: VCES VCEG A V V tf at fis hpE k: A at Ic and Vce A ! v CEsat at Ic and hpE V V A i Package

2SA169

Abstract: 2SC4390 2sc4705 2SC5155
Contextual Info: H ig h -h p g ale H i g h — h F E , H i g h — ♦ ♦ ♦ ♦ H ig h V gßQ T r a n s i s t o r s V E B O Case outlines unit:mm SANYO :SMCP*f-o.s .„.i.i B'-Base -¿¡Collector C E:Emi tter B E T r - a n s i s t o r - s A p p 1 i c a t F e a t u r e s

13005 2 transistor

Abstract: D13005 TRANSISTOR 13005 13005 s 13005 TRANSISTOR d13005t 13005T 13005 ballast 13004 TRANSISTOR transistor 13005 CIRCUIT
Contextual Info: TD13004 • TD13005 Te m ic TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology Very low dynam ic saturation • G lass passivation Very low operating tem perature • Very short sw itching times High reverse voltage

Q400414

Abstract: 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M
Contextual Info: LORAS INDUSTRIES ITrms Amps PART No. INC 42E VDRM IDRM Volts mAmps PACKAGE Q1 D 5500440 TRIAC IGT Q2 Q3 mAmps DOOOODt. T IL O R A “T - 2 5 ' O Î VGT Volts Q4 Ih mAmps ITM Amps VTM Volts 0.6 Amps ITrms TO-92 Package MAC974 MAC976 0.6 0.6 MA0&7fr " : MAC97A3 "•

ST E3 0560

Abstract: J 292 ftm 230 CS8125 CS8127 CS8127-IP1 625 660 TG t1537
Contextual Info: CRYSTAL SEMICONDUCTOR 3âE: D ES 2S4L.3E4 •^ r o a a a m jL iT r x ,o \ m E z r a ma r a a œ a a& E ^? 00040=14 S E3CYS CS8127 Semiconductor Corporation Light Emitting /Detecting Diode iu3~7 Features General Description • Supports bi-direction communication

2SK1778

Abstract: 2SJ177 2SJ295 KWSA103 PF0030 PF0040 PF0042
Contextual Info: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m

Contextual Info: UNCONTROLLED DOCUMENT R 0 .2 5 2 ,5 0 PART NUMBER SM L-LX2530YG C-TR REV. A C R 0 .0 1 0 ] [0 ,0 9 8 ] 1 I REV. B E.C.N. NUMBER AND REVISION COMMENTS DATE 10.3.01 E.C.N. #10 7 9 3 . E.C.N. #10 9 6 7 . B 3.14.03 CATHODE MARK GREEN ELECTRO-OPTICAL CHARACTERISTICS Ta = 25-C

J 6920 A

Contextual Info: SIEMENS 7 x 5 Video Matrix Switch 1 Overview 1.1 Features TDA 6920 • Fast I2C Bus controlled max. 400 kHz • Cascadable (2 bus addresses) • 7 CVBS inputs, 5 outputs 3 inputs with clamp disable by bus • 1 input selectable as Y-input (S-VHS) • 1 additional C-input (S-VHS)

7550N

Contextual Info: LOW POWER ATTENUATORS, CHIP SER IES PCA, PCAA DC-18 GHz FEATURES • Laser Trimmed • Temperature Stable GENERAL INFORMATION The PCA and P C M Series consists of a laser trimmed distributed thin film element on an alumina ceramic substrate with solderable terminals. Two

ITT Cannon SS4R

Abstract: 121348-20 Cannon 317-8657-000 SS121347-20 MIL-C-23216 330-8672-000 SS 121348-10 SS1213 HPZ-240 8 Pin Mini DIN Plug assembly
Contextual Info: SURE-SEAL Reliability. Low Cost. Performance. Delivery! ITT Cannon provides them all with SURE-SEAL connectors a new series of low cost, UL and CSA recognized, environ­ mental connectors. The one-piece molded body and rugged multiple moisture seals make the SURE-SEAL connector a natural for applica­

th 2190

Abstract: LA4475 speaker protector VN02 la44 3082-S14HIC dca100 2SU06
Contextual Info: ^Ordering nurnbef:EN 2190C F SAMYO i NO.Z190C M on o lith ic Linear ICs BTL-OCL Power 20VI Amp f o r Car S t lr l- o Use Features - High output; 20W/THD=10i, 15W/TUD=1i • Low distortion: 0.06i / ":;% k - Excellent ripple rejection: 65dB If ,1, _ Low residual noise iRg=0 : 0.09mV

2sk1299

Abstract: PF0042 2SJ295 2SJ299 2SK1919 PF0040 KWSA103 PF0030 Hitachi Scans-001
Contextual Info: 29 HITACHI 5.4 Communications Mobile RF SAW Filters NMT/GSM KTACS HITACHI KAMT« Tb Bx Tu ft* T» 9m, hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB HWSBXa HW SA03 H W SM » O m« Q m

2SK1778

Abstract: 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

BT808

Abstract: Q2006L5 Triac SC141D TFK 609 TO810MH triac tic236m Q2006R5 Q4025V5 Q6040 T0505NH
Contextual Info: LORAS INDUSTRIES INC 42E D 5500440 DOOOODt. T IL O R A “T - 2 5 ' O Î TRIAC ITrms PART No. VDRM Volts PACKAGE Amps IDRM mAmps IGT Q2 Q3 mAmps Q1 VGT Volts Q4 Ih mAmps VTM Volts ITM Amps 0.6 Amps ITrms T O -92 Package MAC974 0.6 0.6 MAC976 MACÔ7& 0.6: MAC97A3 "•

IRFY9120

Abstract: diode ED 84 IRFY120 660B IRFV460 ISFV460D TO-257AB
Contextual Info: Data Sheet No. PD-9.660B I3R INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFV4BO N-CHANNEL 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IG22

Abstract: IRGAC50U
Contextual Info: Government and Space Other Products from IR IGBT Hermetic Packages 6 0 0 - 1200V V BR CES v GE(th) MIN (V) (V) Part Number IRGAC30F IRGAC30U IRGAC40F IRGAC40U IRGAC50F IRGAC50U IRGMC30F IRGMC30U IRGMC40F IRGMC40U IRGMC50F IRGMC50U 600 3.0 Ej s TY P ic @ •c@

P1-25-EA-SVB

Abstract: Moeller T0-2-8900 Moeller P1-32 P1-32-EA-SVB P3-63-EA-SVB T0-2-1-EA-SVB moeller VDE 0660 iec 947-3 TM-2-8230 T0-2-15679 moeller VDE 0660 typ 156
Contextual Info: 07/000 Rotary Switches Switch-Disconnectors T Rotary Switches, P Switch-Disconnectors Moeller HPL0211-2001/2002 07/001 Moeller HPL0211-2001/2002 T Rotary Switches, P Switch-Disconnectors Overview TM mini rotary switches Overview of functions Page 07/002 Overview of functions

MIL-C-55302

Abstract: 600-1-9P 610-1-25P 600-1-17SD16 600-1-17P 615-1-23P 600-1-33SD16 ST600-1-41P1 Soldering profile S_6001 615-1-23SD16
Contextual Info: 610-1-25SD16 M55302/B-02 600-1-77SD16 (M55302/6-06) 615-1-23SD16 (M55302/2-04) 610-1-25P (M55302/7-02) 600-1-77P (M55302/4-06) 615-1-23 P (M55302/1-04) FEATURES • A micro-miniature, right angle plug and receptacle connector designed for use with single sided, double sided and multi-layered board-to-board applications.

V1525

Abstract: 2SC3114 2SA1692 2SC3068 High Vebo 001S4 2SC3071 2sc3495
Contextual Info: b3E í 7W07b SAfÍYO 001S42Q ISS « T S A J H i g h “ h p g H i g h V g ß Q T r a n s i s t o r s SANYO SEMICONDUCTOR CORP Case outlines unit:11ml SANYO :SMCP »Me— 0.1 B’ -Base n -Jlector ltter ale H i g h —hFE, H1g h —VEBO T r a n s i s-toi-s

Hitachi PF0030

Abstract: 25K1772 2sk1299 PF0040 2SJ295 KWSA103 PF0030 PF0042 2SJ299 2sk1205
Contextual Info: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m

PF0040

Abstract: 2sk mosfet pf0030 hitachi 2sj217 2SJ299 2sk mosfet rf power 2sk1299 2SJ214 2SJ295 2SK1919
Contextual Info: HITACHI 1.5.4 13 New DIV-L Series • • 2.5V and 4V gate drive device High speed switching 30% reduction in fall time, tf • Strong resistance to inductive load over voltage avalanche breakdown. • Stronger built-in diode breakdown capability • Wide range of P-channel devices

12W 04 SMD MOSFET

Abstract: PF1002 PF0012 mosfet 12w smd PF0022 pf0017b 12W SMD MOSFET PF0027 pf0030 hitachi PF0010
Contextual Info: HITACHI 17 1.8 RF Power Modules These modules offer high efficiency along with excellent immunity to intermodulation distortion and load mismatch. MOSFET technology is well suited to use in the output stage of a cellular radio. Hitachi offers a range of MOSFET Power Amplifiers