T0220FM Search Results

2SC3365 -TO3

Abstract: 2sc2820 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979
Contextual Info: HITACHI/ OPTOELECTRONICS blE ]> • 4MTb2DS □□13776 TD7 ■ H I T H T 24 4. Pow er Bipolar Transistors H IT A C H I 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.

2SK1275

Abstract: D0135
Contextual Info: MMTbSGS Q0132Ö4 7Tb • H I T 4 2SK1275SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES # Low On-Resistance # High Speed Switching 1. # Low Drive Current # No Secondary Breakdown # Suitable for Switching Regulator and Gate 2. D ra in 3. Source

2SK1778

Abstract: 2SJ177 2SJ295 KWSA103 PF0030 PF0040 PF0042
Contextual Info: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m

2SD2103

Abstract: 2SD2096 TO220FM 2SD2102 2sd209 2SD2109 STC 100u 2SD2091 SC-63 2SD2093
Contextual Info: - 280 - Ta=25^,*EPÍáTc=25'C í± « 2SD2091 2SD2092 2SD2093 2SD2094 2SD2096 2SD2097 2SD2098 2SD2099 2SD2100 2SD2101 2SD2102 2SD2103 2SD2104 2SD2Ì05 2SD2106 2SD2107 2SD2108 2SD2109 2SD2110 2SD2111 2SD2112 2SD2113 2SD2114K 2SD2115L/S 2SD2116 2SD2117 2SD2119

2SD2334

Abstract: 2SD2350 2SD2333 2SD2328 2SD2363 ZSD2361 2SD2312 2SD2331 2SD2323 2SD2294
Contextual Info: Ta=25'C, *Ef](iTc=25'C m z tt & 2SD2294 H i H out 2SD2295 S i H out 2SD2296 H i H out 2SD2297 H i H out 2SD2298 0i H out 2SD2299 H i H out Vc b o Vc e o (V) (V) 1500 1500 1500 p * '• (A) 800 800 800 1 Di ^ *. aBU ink) m (W) I M ^ 14 (Ta=25‘ C) [*EP(átyjH¡S3

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

Contextual Info: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array HITACHI November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS o1i < 0.17 ¿1, VGS = 10 V, ID= 4 A P-channel: RDS(o1i) < 0.2 Q, VGS= -10 V, ID= -A A

2sk1299

Abstract: PF0042 2SJ295 2SJ299 2SK1919 PF0040 KWSA103 PF0030 Hitachi Scans-001
Contextual Info: 29 HITACHI 5.4 Communications Mobile RF SAW Filters NMT/GSM KTACS HITACHI KAMT« Tb Bx Tu ft* T» 9m, hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB HWSBXa HW SA03 H W SM » O m« Q m

2SK1778

Abstract: 2SJ236 2SK1776 2SJ299 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

2SK1778

Abstract: 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC

5252 F 1108

Abstract: 4550J TO220FM 12015C 5252 F 1104 0345A msp18 E1113 K2613 SP1211
Contextual Info: B 2 S A series P 5 5 6 8 8 8 6 6 6 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 6 9 5 5 5 5 5 5 5 5 5 6 5 5 8 8 8 6 P*c*^aeoda TO-92 TO-92 TO-92 TO-126M TO-126M TO-126M TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92

Contextual Info: 4AM14 Silicon N-Channel/P-Channel Complementary Power MOS FET Array HITACHI November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS o1i 2 0.17 Vi, V GS = 10 V, ID= 4 A P-channel: RDS(o1i) 2 0.2 1/ 2, V GS = -1 0 V, ID= -A A

2SB1370

Abstract: 2SB1376 2sd2083 2sb1383 2SD2012 2SB1369 2SB1371 2SB1372 2SB1373 2SB1375
Contextual Info: - 88 - T a = 2 5 U *EP(âTc=25£C A, ft m S -A. v'cBO VcEO (V) (V) ÍCCDC) (A) n (W) m n ft T (max) ( jw A) (W) (min) uh t (max) (V? te Vce (V) (Ta=25cC ) Ic/I e (A) OEPiitypfil] • BE.\oak/ (max) (V) (V) Ic (A) 1b (A) 2SB1369 □— A G -60 -60 -3 40

Hitachi PF0030

Abstract: 25K1772 2sk1299 PF0040 2SJ295 KWSA103 PF0030 PF0042 2SJ299 2sk1205
Contextual Info: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m

PF0040

Abstract: 2sk mosfet pf0030 hitachi 2sj217 2SJ299 2sk mosfet rf power 2sk1299 2SJ214 2SJ295 2SK1919
Contextual Info: HITACHI 1.5.4 13 New DIV-L Series • • 2.5V and 4V gate drive device High speed switching 30% reduction in fall time, tf • Strong resistance to inductive load over voltage avalanche breakdown. • Stronger built-in diode breakdown capability • Wide range of P-channel devices

12W 04 SMD MOSFET

Abstract: PF1002 PF0012 mosfet 12w smd PF0022 pf0017b 12W SMD MOSFET PF0027 pf0030 hitachi PF0010
Contextual Info: HITACHI 17 1.8 RF Power Modules These modules offer high efficiency along with excellent immunity to intermodulation distortion and load mismatch. MOSFET technology is well suited to use in the output stage of a cellular radio. Hitachi offers a range of MOSFET Power Amplifiers

2SK2225 equivalent

Abstract: 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 Recommended products in each power range Recommended Products in Each Power Range Type power supply Voltage Up to 10 w 10 W to 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 100 V to 132 V AC □ 2SK1151 {3.5}

Contextual Info: ADE-208-156B<Z HRW26F Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Features Rev. 2 Nov. 1994 Pin Arrangement • Low forward voltage drop. VF=0.55V max) • High reverse voltage. (VR=40V max) • Full molded fin enables easy insulation from

Contextual Info: 2SC5206 Silicon NPN Triple Diffused HITACHI A pplication High pow er switching Features • High breakdown voltage V cbo = 5 0 0 V • Isolated package T0-220FM O utline TO-22QFM I < i 3 2 Collector 3 Emitter 2SC5206 A bsolute M axim um R atings Ta = 25°C

2sj177

Abstract: 2SJ299 PF0040 2SJ292 2SJ295 Hitachi PF0030 TO220FM 2SJ278 2SJ279 2SJ290
Contextual Info: HITACHI 1.5.4 13 New DIV-L Series • • 2.5V and 4V gate drive device High speed switching 30% reduction in fall time, tf • Strong resistance to inductive load over voltage avalanche breakdown. • Stronger built-in diode breakdown capability • Wide range of P-channel devices

2sj217

Abstract: pf0030 hitachi 2SJ295 2SK1919 PF0040 KWSA103 PF0030 PF0042 2SJ214 2SJ220
Contextual Info: HITACHI 29 5.4 Communications Mobile RF SAW Filters NMT/GSM KTACS HITACHI KAMT« Tb Bx Tu ft* T» 9m, hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB HWSBXa HW SA03 H W SM » O m« Q m

Contextual Info: 2SC5206 Silicon NPN Triple Diffused HITACHI Application High power switching Features • High breakdown voltage • VCB0 = 500 V Isolated package T0-220FM Outline TO-22QFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC5206 Absolute Maximum Ratings Ta = 25 °C

2sc5083

Abstract: pine alpha st-100s arakawa chemical 2SC4044S 2SC1740S 2SC1809S 2SC401 ROHM FTL 2SC2058S 2SC2926S 2SC4010
Contextual Info: E x c e lle n c e in E le c tr o n ic s T t \ RBHffl RECOMMENDABLE CONDITION OF SOLDERING TRANSISTOR CONDITION OF SOLDERING FOR LEAD TYPE TRANSISTOR LEAD FREE Sn-3Ag-0.5Cu VERSION CONTENTS REV. : C RECOMMENDABLE CONDITION OF SOLDERING DIP 2 /3 RECOMMENDABLE CONDITION OF HAND SOLDERING