T0220A8 Search Results

Q400414

Abstract: 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M
Contextual Info: LORAS INDUSTRIES ITrms Amps PART No. INC 42E VDRM IDRM Volts mAmps PACKAGE Q1 D 5500440 TRIAC IGT Q2 Q3 mAmps DOOOODt. T IL O R A “T - 2 5 ' O Î VGT Volts Q4 Ih mAmps ITM Amps VTM Volts 0.6 Amps ITrms TO-92 Package MAC974 MAC976 0.6 0.6 MA0&7fr " : MAC97A3 "•

D84CN2

Abstract: IRF620 RF620
Contextual Info: PUF IRF620.621 D84CN2.M2 5 AMPERES 200,150 VOLTS Rd s (ON = 0.8 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

Contextual Info: TECCÔR ELE CTRONICS INC 24E D- Afl72fln 0001311 7 ~ 2 S -Z 2 > TECCOR ELECTRONICS, INC. 1801 HURD DRIVE IRVING, TEXAS 75038-4385 PHONE 214/580-1515 FAX 214/550-1309 ALTERNISTORS General Description 15-40 Amps T h e se Alternistors are offered in three b a sic

T1C263M

Abstract: q4015 triac T1C226D Q200BL5 Q2006L5 Q5025Z6 SC160D q201015 Q4015A Q4006
Contextual Info: PART No. ITrms Amps PACKAGE VDRM IDRM Volts mAmps Q1 TRIAC IGT Q2 Q3 mAmps Q4 VGT Volts Ih mAmps VTM Volts ITM Amps 0.6 Amps ITrms TO—92 Package MAC974 MAC976 MAC978 MAC97A4 MAC97A6 MAC97A8 200 400 600 200 400 600 .010 .010 .010 .010 .010 .010 10 10 10 5

LM3661TL-1.40

Abstract: motorola MJ480 PN3054 2SC756 PN30 acrian inc MJE2482 MJE2480 MJE5190J MJ480
Contextual Info: POWER SILICON NPN Item Number Part Number I C . 5 10 20 25 30 044C3 80461 044C2 40621 80435 80735 80735 2N6205 2N6205 2N6205 S30•28 40310 40324 80463 SK3041 SK3041 S15·12 AP15·12 ~f~j:A 35 40 80X24 40316 1571·0420 80163 MJE2480 MJE2482 40250Vl 40250Vl

2N4301

Contextual Info: 3 8 ^ 0 ¡ jn G E S O L ID STATERÒ ! DE J 3 f l ? S 0 f l l 001^404 S TIP 32 Series PNP POWER TRANSISTORS -4 0 -1 0 0 VOLTS -3 AMP, 40 WATTS COMPLEMENTARY TO THE TIP31 SERIES The TIP32 Series power transistors are designed for use in general purpose amplifier and switching applications.

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

BT808

Abstract: Q2006L5 Triac SC141D TFK 609 TO810MH triac tic236m Q2006R5 Q4025V5 Q6040 T0505NH
Contextual Info: LORAS INDUSTRIES INC 42E D 5500440 DOOOODt. T IL O R A “T - 2 5 ' O Î TRIAC ITrms PART No. VDRM Volts PACKAGE Amps IDRM mAmps IGT Q2 Q3 mAmps Q1 VGT Volts Q4 Ih mAmps VTM Volts ITM Amps 0.6 Amps ITrms T O -92 Package MAC974 0.6 0.6 MAC976 MACÔ7& 0.6: MAC97A3 "•

T0-220AB

Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
Contextual Info: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET

K105 transistor

Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11
Contextual Info: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and

IRG4BC20KD

Abstract: IGBT IRG4BC20KD IRGBC20KD2 transistor iqr
Contextual Info: PD -9.1509 International JQR Rectifier IRG4BC20KD PREUMNAHY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz . and Short

IRF1010

Abstract: IRFBC40LC 3S4M
Contextual Info: International i»R Rectifier IRFBC40LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced C ss. Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated V d ss

TIC2360

Abstract: 8ta12 SC160D TLC226B TO505mh Q2006L5 SC160M 04004f41 C245B Q6040
Contextual Info: LO R A S I N D U S T R I E S INC M2E D • 5SflQ44ö G D G G O D b T ■ LORA “T -2 5 'O Í TRIAC o Q1 Ol VDRM IDRM Volts mAmps col PACKAGE OJ O ITrms Amps PART No. mAmps VGT Volts Ih mAmps VTM Volts ITM Amps 0.6 Amps ITrms TO—92 Package MAC974 MAC976

tip320

Abstract: MJ032C 9t18 80586 MJ032 4050gg diode hitachi MJE-371 BOT32 MJE371
Contextual Info: POWER SILICON PNP Item Part Number Number I C 5 10 >= 20 80582 80940 80940 80940 80940F 80940F 2N6419 2N6419 ~~~~~7 25 30 2S81215 80T30DF 80T320F TIP320 80942 80942 80942 80942F ~~~~~~5 35 40 80X16 80X16 TIP32E TIP32E TIP32E TIP32F TIP32F TIP32F +~~~~;~g

103YY

Abstract: 2025h EC-103Y S6015L S1012L TIC106M SCR CR3103 CR3106 S6025 0306l
Contextual Info: SCR PART No. ITrms Amps PACKAGE ITavq Amps VDRM Volts IGT MAX mAmps IDRM mAmps IGT MIN mAmps Ih mAmps VTM ITM Volts Amps 5 5 5 5 5 5 : ;:5 5 5 5 5 5 5 5 5 8 5 5 5 8 5 5 5 8 5 5 5 8 5 5: 5 B 5 5 5 8 5 5 5 : 8 5 50 1.70 1.70 1.70 1.70 1;7Q 1.70 1.70 1.70 1.50

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

Motorola transistors MRF 947

Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
Contextual Info: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,