STK14N Search Results

Contextual Info: STK14N05 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)14# I(DM) Max. (A) Pulsed I(D)10 @Temp (øC)100# IDM Max (@25øC Amb)56 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50# Minimum Operating Temp (øC)

Contextual Info: STK14N10 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)14# I(DM) Max. (A) Pulsed I(D)9 @Temp (øC)100# IDM Max (@25øC Amb)56 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)65# Minimum Operating Temp (øC)

Contextual Info: _ • 7^237 rr7 Ä 7# ÜOMbOfiT DT3 ■ S G T H _ _ SCS-THOMSON S T K 14N 10 RÆD g^mi(gïï^ iD(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK14N 10 V d ss RDS(on Id 100 V < 0 .1 4 n 14 A ■ T Y P IC A L FtDS(on) = 0 .0 9 5 £2

STK14N06

Contextual Info: S G S - T H O M ¿ 5 S T K 14N05 S T K 14N06 S O N ¡m e ra « 7 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYP E V R D S o n dss STK14N05 50 V < 0.12 STK14N06 60 V 0.12 < Id a a 14 A 14 A • TYPICAL RDS(on) = 0.1 Q

14N05

Abstract: BR03 TK14N GCJ4360
Contextual Info: STK14N05 STK14N06 SGS-THOMSON iL[IOT g «§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE Voss RDS(on) Id STK14N 05 50 V 0 .1 2 Ü 14 A 60 V 0.12 £2 14 A STK14N 06 ! r AVALANCHE RUGGEDNESS TECHNOLOGY , 100% AVALANCHE TESTED , REPETITIVE AVALANCHE DATA AT 100°C

K14N05

Abstract: 4N06 4N05
Contextual Info: *57 s t k 1 4N o5 S T K 1 4 N 06 S G S -T H O M S O N ilLHCTIIMDe N - CHANNEL ENHANCEMENT MODE _ POWER MQS TRANSISTOR PRELI MI NARY DATA T YPE V dss R DS on Id STK14N 05 50 V < 0.12 a 14 A STK14N 06 60 V < 0.12 £2 14 A • . ■ ■ . ■ ■ .

STK14N05

Abstract: STK14N06 diode AR s1 56 P032B
Contextual Info: STK14N05 STK14N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STK14N05 50 V < 0.12 Ω 14 A STK14N06 60 V < 0.12 Ω 14 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: STK14N06 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)14# I(DM) Max. (A) Pulsed I(D)10 @Temp (øC)100# IDM Max (@25øC Amb)56 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50# Minimum Operating Temp (øC)

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

TSD45N50V

Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
Contextual Info: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00

LM334N

Abstract: driver motor stepper ULN2064 sg3524 drive motor dc motor uln2001 SGSD00030 st90r50 LM337 TO-3 M5482 BFR36 of dc motor speed control SG3524
Contextual Info: POINT OF SALE TERMINALS RECOMMENDED PRODUCTS FROM SGS-THOMSON POWER SUPPLY Cont’d POWER SUPPLY Type L78xx L79xx L78Mxx LM317 LM317MDT LM323 LM337 LM338K LM350K L78Sxx L78Lxx LM723 L4940Vxx L4941 LFxx LExxA/C LK115Dxx LD1117xx L4931 TL431 MC1403 Description

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

7N90FI

Abstract: 4N80FI 8n80 TP20N 8N80F 9N80FI 4N90F y 4m TSD4M450V 5N90
Contextual Info: SELECTION GUIDE - BY VOLTAGE V BR DSS (V ) ^D Sfon) * ? max Id (A) Package Type iD(max) Ptot (A) (W ) (Q ) g ts C iss min Page (S ) max (pF) * 1000 0 .7 7 0 9 .0 IS O T O P TSD 14N 100V 1 4 .0 310 8 .0 7000 1000 0 .7 7 0 9 .0 IS O T O P TSD 17N 100V 1 7 .0

SSH6N80

Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Contextual Info: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205

TSD45N50V

Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V
Contextual Info: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000