P032B Search Results

6V DC-AC Fluorescent lamp

Abstract: GC539 STK4N25
Contextual Info: *57 SGS-THOMSON ¡H ie r a « ! S T K 4 N 25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STK4N25 • . ■ . . V dss 250 V RDS on < 1.1 a Id 4 A TYPICAL RDS(on) = 1 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

L78M00

Abstract: L78M05CV L78M06CV L78M08CV L78M09CV L78M10CV L78M12CV L78M15CV L78M18CV
Contextual Info: L78M00 SERIES  POSITIVE VOLTAGE REGULATORS • ■ ■ ■ ■ OUTPUT CURRENT TO 0.5A OUTPUT VOLTAGES OF 5; 6; 8; 9; 10; 12; 15; 18; 20; 24V THERMAL OVERLOAD PROTECTION SHORT CIRCUIT PROTECTION OUTPUT TRANSISTOR SOA PROTECTION DESCRIPTION The L78M00 series of three-terminal positive

transun

Abstract: L4941BV L4940 L4941 L4941BDT L4941BS L4941BX P011D
Contextual Info: L4941 VERY LOW DROP 1A REGULATOR . . . LOW DROPOUT VOLTAGE 450 mV typ at 1A VERY LOW QUIESCENT CURRENT THERMAL SHUTDOWN SHORT CIRCUIT PROTECTION REVERSE POLARITY PROTECTION DESCRIPTION The L4941 is a three terminal 5 V positive regulator available in TO-220, SOT-82, SOT-194 and DPAK

V1116

Abstract: STK3NA50 bc620 JIS-350
Contextual Info: S G S - T H O M S O N ¿ 5 S T K 3 N A 50 ¡U È T O « 7 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V STK3NA50 dss 500 V R D S o n Id <3 0. 2.7 A . TYPICAL R DS(on) = 2.4 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING • . . . . 100% AVALANCHE TESTED

L4941BV

Abstract: L4940 L4941 L4941BDT L4941BS L4941BX transun
Contextual Info: L4941 VERY LOW DROP 1A REGULATOR . . . LOW DROPOUT VOLTAGE 450 mV typ at 1A VERY LOW QUIESCENT CURRENT THERMAL SHUTDOWN SHORT CIRCUIT PROTECTION REVERSE POLARITY PROTECTION DESCRIPTION The L4941 is a three terminal 5 V positive regulator available in TO-220, SOT-82, SOT-194 and DPAK

smps Schematic Diagram

Abstract: STK2N80 0618E
Contextual Info: STK2N80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK2N80 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V < 7Ω 2.1 A TYPICAL RDS(on) = 5 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INPUT CAPACITANCE

STK22N05

Contextual Info: STK22N05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID STK22N05 50 V < 0.065 Ω 22 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

stk 0035 n

Contextual Info: £ j ï SGS-THOMSON 4 25 ULKgraMOeS STK N N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TK4N 25 V dss RDS on Id 250 V < 1 .1 Q. 4 A • TYPICAL R D S (on) = 1 £2 . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: *57 SGS-THOMSON iL iO M iQ £ I S T K 2 2 N 05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss R DS(on) Id STK22N 05 50 V < 0.065 a 22 A • TYPICAL R Ds(on) = 0.048 Q AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: S G S - T H O M S O N ¿ 5 S T K 2N 80 ¡m e ra « 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STK2N80 dss 800 V R D S o n Id <7 a 2.1 A • TYPICAL RDS(on) = 5 0 . . AVALANCHE RUGGED TECHNOLOGY ■ . . . . 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: ¿ 5 SGS-THOMSON ¡m era « 7 STK12N05L STK12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E STK12N 05L STK12N 06L V dss RDS on Id 50 V 60 V < 0.15 a < 0.15 a 12 A 12 A . TYPICAL RDs(on) = 0.115 Q . . AVALANCHE RUGGED TECHNOLOGY

STK12N05L

Abstract: STK12N06L
Contextual Info: STK12N05L STK12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STK12N05L STK12N06L • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 60 V < 0.15 Ω < 0.15 Ω 12 A 12 A TYPICAL RDS(on) = 0.115 Ω AVALANCHE RUGGED TECHNOLOGY

BD120

Abstract: STK2NA60
Contextual Info: S G S - T H O M S O N ¿ 5 ¡U È T O « 7 S T K 2 N A 60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V dss RDS on Id STK2NA60 600 V < 8 Q. 1.9 A . TYPICAL R DS(on) = 7.2 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING • . . . . 100% AVALANCHE TESTED

STK2NA60

Contextual Info: STK2NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS R DS on ID STK2NA60 600 V <8Ω 1.9 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 7.2 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STK2N80

Contextual Info: STK2N80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK2N80 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 800 V <7Ω 2.1 A TYPICAL RDS(on) = 5 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INPUT CAPACITANCE

floating regulator circuits

Abstract: LM317M LM217MDT
Contextual Info: LM217M LM317M MEDIUM CURRENT 1.2V TO 37V ADJUSTABLE VOLTAGE REGULATOR . . . . . OUTPUT VOLTAGE RANGE : 1.2 TO 37V OUTPUT CURRENT IN EXCESS OF 500 mA LINE REGULATION TYP. 0.01% LOAD REGULATION TYP. 0.1% THERMAL OVERLOAD PROTECTION SHORT CIRCUIT PROTECTION

STK9N10

Contextual Info: £ j ï SGS-THOMSON ULKgraMOeS S T K 9 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S T K 9N 10 V dss RDS on Id 100 V < 0 .3 Q 9 A TYPICAL R D S (on) = 0.23 £2 . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C

STK17N10

Contextual Info: £ j ï SGS-THOMSON ULKgraMOeS S T K 17N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V dss RDS on Id STK17N10 100 V < 0.11 ß 17 A TYPICAL R D S (on) = 0.09 £2 . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C

SC07770

Abstract: transun
Contextual Info: L4941 B E lQ IL IO T O IO e S VERY LOW DROP 1A REGULATOR LOW DROPOUT VOLTAGE 450 mV typ at 1A VERY LOW QUIESCENT CURRENT THERMAL SHUTDOWN SHORT CIRCUIT PROTECTION REVERSE POLARITY PROTECTION DESCRIPTION The L4941 is a three terminal 5 V positive regulator

STK16N10L

Abstract: STK16N10
Contextual Info: STK16N10L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STK16N10L • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.12 Ω 16 A TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STK23N05L

Abstract: STK23N06L e3810 airbag
Contextual Info: STK23N05L STK23N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STK23N05L STK23N06L • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 60 V < 0.055 Ω < 0.055 Ω 23 A 23 A TYPICAL RDS(on) = 0.044 Ω AVALANCHE RUGGEDNESS TECHNOLOGY

Contextual Info: ¿57 SGS-THOMSON ¡U È T O « S T K 22 N05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STK22N05 . . • . . . ■ . R D S o n Id < 0.065 Q. 22 A dss 50 V TYPICAL RDs(on) = 0.048 Q. AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED

STK14N06

Contextual Info: S G S - T H O M ¿ 5 S T K 14N05 S T K 14N06 S O N ¡m e ra « 7 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYP E V R D S o n dss STK14N05 50 V < 0.12 STK14N06 60 V 0.12 < Id a a 14 A 14 A • TYPICAL RDS(on) = 0.1 Q

L78M15CV

Abstract: L78M05CX Vbe 8 V L78M00 L78M05CV L78M06CV L78M08CV L78M09CV L78M10CV L78M12CV
Contextual Info: L78M00 SERIES  POSITIVE VOLTAGE REGULATORS • ■ ■ ■ ■ OUTPUT CURRENT TO 0.5A OUTPUT VOLTAGES OF 5; 6; 8; 9; 10; 12; 15; 18; 20; 24V THERMAL OVERLOAD PROTECTION SHORT CIRCUIT PROTECTION OUTPUT TRANSISTOR SOA PROTECTION DESCRIPTION The L78M00 series of three-terminal positive