05LFI Search Results

STP55N05L

Abstract: TP55N stp55n05 STP55N05LFI
Contextual Info: £jï STP55N05L 05LFI SGS-THOMSON ULKgraMOeS N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E S TP55N 05L STP55N 05LFI V dss RDS on Id 50 V 50 V < 0 .0 2 3 Q. < 0 .0 2 3 Q. 55 A 30 A TYPICAL R D S (on) = 0.02 £2 . AVALANCHE RUGGED TECHNOLOGY

stp45n05l

Contextual Info: STP45N05L 05LFI S G S -T H O M S O N w R Æ fl g ( Ë } e L E ê ? ^ ( ô M ( g S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR A D V A N C E DATA TYPE STP45N 05L S TP45N 05LFI V dss H D S (o n 50 V 50 V 0 .0 3 5 U 0 .0 3 5 U 45 A 24 A . .

C5027

Abstract: c3519 transistor DI 468 circuit diagram application STP50N05 STP50N05L STP50N05LFI GC517 3519A otw150
Contextual Info: 7 q g q g 3 7 O O M b M q p H H I • S ß T H _ SGS-THOMSON STP50N05L 05LFI li « ! N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V STP50N 05L STP50N 05LFI . ■ ■ . . . ■ . . dss

STP32N05L

Contextual Info: *57 TYPE STP32N05L STP32N 05LFI • • . ■ ■ . ■ ■ . SGS-THOMSON iL iO M K I stp32Nosl 05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R DS on Id 50 V 50 V < 0.055 a < 0.055 a 32 A 19 A T Y P IC A L RDS(on) = 0.045 Q A V A LA N C H E R U G G ED T E C H N O LO G Y

Contextual Info: *57 SGS-THOMSON iL iO M K I stp36Nosl 05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N05L STP36N 05LFI • • . ■ ■ . ■ ■ . V dss R DS on Id 50 V 50 V < 0.04 a < 0.04 a 36 A 21 A T Y P IC A L RDS(on) = 0.033 Q A V A LA N C H E R U G G ED T E C H N O LO G Y

36N06

Contextual Info: *57 SGS-THOMSON iL iO M K I stp36N06L STP36N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N05L STP36N 05LFI • • . ■ ■ . ■ ■ . V dss R DS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A T Y P IC A L RDS(on) = 0.033 Q A V A LA N C H E R U G G ED T E C H N O LO G Y

Contextual Info: ¿57 TYP E S TP32N 05L STP32N 05LFI STP32N05L 05LFI S G S -T H O M S O N ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 50 V 50 V < 0 .055 Q. < 0 .055 Q. 32 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: £jï 21 05 21 05 SGS-THOMSON ULKgraMOeS STP N L STP N LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E S TP21N 05L STP21 N 05LFI V dss RDS on Id 50 V 50 V < 0 .0 8 5 Q. < 0 .0 8 5 Q. 21 A 14 A • TYPICAL R D S (on) = 0.065 £2 . AVALANCHE RUGGED TECHNOLOGY

p15n05

Abstract: C5443 5N05L 5N05 15N05L 15n05 CS4420 P15N05L
Contextual Info: *57 SGS-THOMSON stp 15no5l ilLiCTIIMDe S T P 1 5 N 05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S T P 15N05L S T P 05LFI • . . ■ ■ . ■ ■ V dss R DS on 50 V 50 V < 0.15 a < 0.15 a Id 15 10 A A T Y P IC A L RDS(on) = 0.115 £2

Contextual Info: 7^2^237 *rJ 004b3flS ITO • SGTH SGS-THOMSON i[iJOT «§ STP21N05L 05LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V STP21N 05L STP21NQ5LFI . • . . . . • . R D S o n Id < 0.085 n < 0.085 Q 21 A 14 A dss 50 V 50 V TYPICAL Ros(on) = 0.065 Q

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

STP15

Contextual Info: S T P 15 N 0 5 L s t p i 5 N 0 5 LFI S G S -T H O M S O N ¡m e ra « ¿ 57 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STP15N 05L S 05LFI dss 50 V 50 V R DS on Id < 0.15 a < 0.15 a 15 A 10 A . TYPICAL RDs(on) = 0.115 Q . AVALANCHE RUGGED TECHNOLOGY

7N90FI

Abstract: 4N80FI 8n80 TP20N 8N80F 9N80FI 4N90F y 4m TSD4M450V 5N90
Contextual Info: SELECTION GUIDE - BY VOLTAGE V BR DSS (V ) ^D Sfon) * ? max Id (A) Package Type iD(max) Ptot (A) (W ) (Q ) g ts C iss min Page (S ) max (pF) * 1000 0 .7 7 0 9 .0 IS O T O P TSD 14N 100V 1 4 .0 310 8 .0 7000 1000 0 .7 7 0 9 .0 IS O T O P TSD 17N 100V 1 7 .0

Contextual Info: ¿57 TYP E STP36N 05L S 05LFI STP36N05L 05LFI S G S -T H O M S O N ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 50 V 50 V < 0.04 a < 0.04 a 36 A 21 A . TYPICAL R DS(on) = 0.033 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED