STD3NB30 Search Results

STD3NB30

Contextual Info: STD3NB30 N-CHANNEL 300V - 1.8Ω - 3.2A DPAK PowerMesh MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD3NB30 300 V < 2Ω 3.2 A TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

STD3NB30

Contextual Info: STD3NB30  N - CHANNEL 300V - 1.8Ω - 3.2A - DPAK PowerMESH MOSFET TYPE ST D3NB30 • ■ ■ ■ ■ ■ V DSS R DS on ID 300 V < 2Ω 3.2 A TYPICAL RDS(on) =1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

STM suffix

Contextual Info: STD3NB30 N - CHANNEL 300V - 1.8Q - 3.2A - DPAK PowerMESH MOSFET TYPE STD3NB30 • . . . . . Vpss R p S o n Id 300 V < 20 . 3.2 A TYPICAL R d s ( o ii ) =1.8 £1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

STD3NB30

Contextual Info: STD3NB30 N-CHANNEL 300V - 1.8Ω - 3.2A DPAK PowerMesh MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD3NB30 300 V < 2Ω 3.2 A TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

Contextual Info: STD3NB30 N - CHANNEL 300V - 1.8Q - 3.2A - DPAK PowerMESH MOSFET TYPE S TD 3N B30 • . . . . . V dss R d S oii Id 300 V < 2Q. 3.2 A TYPICAL R D S (on) =1.8 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

STD3NB30

Contextual Info: STD3NB30 N-CHANNEL 300V - 1.8Ω - 3.2A DPAK PowerMesh MOSFET TYPE VDSS RDS on ID STD3NB30 300 V < 2Ω 3.2 A TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE &

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

ste30na50

Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
Contextual Info: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L ✠ STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0

std2n52

Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232

IRF540 complementary

Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

irf840 power supply

Abstract: STP3020L STP38NF06L STP6NB90FP STe30na50 STP4NB90 STN1NB80 IRF740 sT55n STD1NB60
Contextual Info: April 2000 TO-220 VDSS RDS on max (V) (Ω) -60 30 34 50 55 60 75 80 100 150 200 250 300 Type ID(cont) DEVICES REPLACED (A) REMARKS 0.2 0.004 0.006 0.0065 0.009 0.01 0.01 STP12PF06 STP80NF03L-04 STP80NE03L-06 STP90NF03L STP70NF3LL STP70NF03L STP60NF03L 12

SSH6N80

Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L

Complementary MOSFETs buz11

Abstract: IRF644 STP90NF03L stp3nc90zfp IRF540 complementary STP6NC60FP Application Notes STP55NE06FP STY15NA100 STP60NE06-16 stp7nb60fp
Contextual Info: POWER MOSFETs IGBTs Selection Guide P T Y U T O F P H E O U Y I O U R E O P L E C N S W H O O N T R O L Y S T E M S IG B Ts IGB Ts Ts IG BTs IG B FEATURE Logic Level Fully Clamped Low Drop Fast Switching Fast Switching + Freewheeling Diode Short Circuit Proof

STP3N60FI

Abstract: IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90
Contextual Info: May ‘99 TO-220 VDSS RDS on max (V) (Ω) 30 0.004 0.006 0.01 0.012 0.0155 0.02 0.022 0.022 0.045 0.05 0.008 0.015 0.028 0.04 0.055 0.07 0.1 0.006 0.006 0.01 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L ✠ STP3020L

fqp60n06

Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
Contextual Info: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL