STACKED Search Results

54256AP

Abstract: TC54256AF 54256a TC54256P 54256AF tmm23256p 27256D tc54256ap
Contextual Info: TOSHIBA TC54256AP/AF SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT ONE TIME PROGRAMMABLE READ ONLY MEMORY D e s c rip tio n The TC54256AP/AF is a 32,768 word x 8 bit one time programm able read only m em or/ m olded in a 28-pin plastic package. The TC54256AP/AF’s access time is 200ns and it has a low power standby m ode which reduces the power dissipation without

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC57256AD-12,-120,-150 32 , 768 W O R D x 8 B I T C M O S UV ERASABLE A N D ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY IDESCRIPTIONI The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electri­

TC5316200bP

Abstract: TC5316200BP/BF
Contextual Info: TOSHIBA TC5316200BP/BF SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM D escription The TC5316200BP/BF is a 16,777,216 bit read only memory organized as 1,048,576 words by 16 bits when BY I t is logical high, and organized as 2,097,152 words by 8 bits when BYTE is logical low.

TC57256AD

Contextual Info: TOSHIBA TC57256AD-12 TC57256AD-120 TC57256AD-150 SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY Description The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It

TC531621

Contextual Info: TOSHIBA TC5316210CP/CF PRELIMINARY SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM Description TheTC 5316210C P/C F is a 16,777,216 bit read only m em ory organized as 1,048,576 w ords by 16 bits when BYTE is logical

TC5716200D-150

Abstract: 5716200D
Contextual Info: TOSHIBA TC5716200D-150, -200 SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY D escription T heT C 5716200D is a 16,777,216 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It is

TC531024P-12

Contextual Info: TOSHIBA TC531024P-12/15 TC531024F-12/15 SILICON STACKED GATE CMOS 65,536 WORD x 16 BIT CMOS MASK ROM Description The T C 5 3 1 0 2 4 P /F is a 1,048,576 bit read only m em ory organized as 65,536 words by 16 bits. The T C 5 3 1 0 2 4 P /F is fabricated using Toshiba’s advanced C M O S technology w hich results in high speed and low pow er features:

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC531621OBP/BF/BFT 16M BIT 1M W O R D x 16 B IT / 2 M W ORD TENTATIVE x 8 B IT C M O S M A S K R O M DESCRIPTIO N T he T C 5316210B P / B F / BFT is a 16,777,216 bits read only m em ory organized as 1,048,576 words by

D1285

Abstract: binding post
Contextual Info: Pomona Model 1285 Phone Plug Adapter With Binding Posts FEATURES: • Converts Standard Phone Jacks to Double Binding Posts. • Banana Plugs can be stacked vertically or horizontally. • Wires, spade lugs and pin tip plugs can be attached by means of the insulated knurl thumb knob.

Contextual Info: Type FCP Surface Mount Film Capacitors Stable Stacked Metallized Film PPS Chips for Reflow Soldering The Type FCP’s combination of high capacitance density and excellent high frequency response makes it a great choice for wireless and instrumentation applications.

90919

Contextual Info: Model 6490 SMD Grabbers For ,025mm Lead Pitch FEATURES: • Use with SOIC, PLCC & PQFP packages with .025” lead pitch • Thin body style allows an unlimited number of clips to be stacked side by side MATERIALS: Body: ABS Plastic Tip: Nickel Plated Steel or Stainless Steel

DDR266

Contextual Info: DDR SDRAM stacked 1Gb B-die x4/x8 DDR SDRAM Stacked 1Gb B-die DDR SDRAM Specification (x4/x8) Revision 1.1 Rev. 1.1 August. 2003 DDR SDRAM stacked 1Gb B-die (x4/x8) DDR SDRAM st. 1Gb B-die Revision History Revision 0.0 (May, 2003) - First version for internal review.

1113

Abstract: C1553-1 MIL-PRF-21038 MIL-T-10727 1517
Contextual Info: Value Series surface mount dual stacked MIL-PRF-21038 Interface Transformers 0o to +70o C These non-QPL interface transformers conform to all electrical and physical parameters of MIL-PRF-21038/27 and provide performance as required over 0o to +70o C. Built and tested in

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

M390S2858DTU

Abstract: M390S2858DTU-C1H M390S2858DTU-C1L M390S2858DTU-C7A M390S2858DTU-C7C 10D4L PC133 registered reference design
Contextual Info: M390S2858DTU PC133/PC100 Low Profile Registered DIMM M390S2858DTU SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S2858DTU is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2858DTU consists of eighteen CMOS Stacked

GL032A

Abstract: S71GL032A S71GL032
Contextual Info: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this

C3153 M

Abstract: C3474 B32520 C3332 c475 epcos B32529b C168 B32521 C1102 B32522C
Contextual Info: Metallized Polyester Film Capacitors MKT and MFT B 32 520 Plastic Case … B 32 529 Standard applications Construction • Dielectric: polyethylene terephthalate (polyester) ■ Stacked-film technology for lead spacing 5 and 7,5 mm as well as for 10 and 15 mm (63 … 400 Vdc)

ECPU1C104MA5

Abstract: ECPU1C154MA5 ECPU1C224MA5 ECPU1C334MA5 ECPU1C474MA5 ECPU1C684MA5 Film Chip Capacitor
Contextual Info: Discontinued Plastic Film Capacitors Film Chip Capacitor Type : ECPU A Stacked dielectric and inner electrode with simple mold - less construction •Features •Low ESR •Max. capacitance values 1.0µF •Smallest package size in film capacitors 3225/1µF

Contextual Info: S98WS256PD0-003 Stacked Multi-chip Product MCP 256 Mbit (16 M x 16-Bit) 1.8 V Burst Mode Flash Memory 128 Mb (8M x 16-Bit) 1.8 V CellularRAM Type 2, Burst Mode Data Sheet S98WS256PD0-003 Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

S98WS512

Contextual Info: S98WS512PE0FW005 Stacked Multi-chip Product MCP 512 Mbit (32M x 16-Bit) Stacked Burst Mode, Simultaneous Read/Write Flash Memory with 256 Mbit (16M x 16-bit) Mobile SDRAM on Shared Bus S98WS512PE0FW005 Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: SPECIFICATIONS SCSI III Connector Mechanical Contact Retention Force: 0.91Kg 2.01Lb min. Durability: 500 Cycles Electrical QA Series Right Angle, T/H Type 1.27mm [.050”] Pitch Stacked 68 Pos. Current Rating: 1A Contact Resistance: 35mΩ max. initial, 55mΩ max. after Test

HTPB

Contextual Info: PROFESSIONAL QUALITY PRINTED BOARD MOUNT TRI PORT VERTICALLY STACKED CONNECTOR ASSEMBLY FOR SHELTERED INDOOR/OUTDOOR ENVIRONMENTAL APPLICATIONS WHERE EMI SHIELDING IS REQUIRED 9 0 ° PRINTED BOARD MOUNT CONNECTOR 6 ROW CONNECTOR UNIT, 0 .2 8 3 7 ,1 9 CONTACT EXTENSION

AD7560

Abstract: OF IC 741 using opamp ad7540 2V reference voltage converter circuit dc to Dc 2V to 24V AD7560JN ad-7560s
Contextual Info: ANALO G D E V IC E S CMOS Monolithic DC-DC Voltage Converter & Reference AD7560 PRELIMINARY TECHNICAL DATA AD7560 FUNCTIONAL BLOCK DIAGRAM FEATURES Efficient Series Stacked dc/dc Converters Which Provide Multiple Outputs From a Single +5V Supply - 5 V , -1 0 V , - 1 5 V , +10V, +15V

KMM377S2857AT2-GH

Abstract: KMM377S2857AT2-GL
Contextual Info: Preliminary KMM377S2857AT2 SDRAM MODULE K M M 377S2857AT2 SDRAM DIMM Intel 1.1 ver. Base 128M x72 SDR AM DIMM w ith PLL & R egister based on Stacked 128Mx4, 4B anks 8K Ref., 3.3V S D R A M s w ith SPD GENERAL DESCRIPTION FEATURE T he Sam sung KM M 377S2857AT2 is a 128M bit x 72 S yn ­