1113 Search Results

LDR1102

Abstract: Y1131
Contextual Info: SIEMENS Cf I P NT S i 5SE OPTO ôE3b3ab ooom:y3 s • D SIE M E N S LDR LDH LDY LDG RED HIGH EFFICIENCY RED HIGH EFFICIENCY YELLOW HIGH EFFICIENCY GREEN 1101/1102/1103 1111/1112/1113 1131/1132/1133 1151/1152/1153 T1 LED LAMP T - W - a .I Package Dimension in Inches mm

Contextual Info: UNCONTROLLED DOCUMENT REV. A 031,00 [01.220] 025.00 [00,984] PART NUMBER REV. SS -LX H 2 0 R 6 SO D A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #11137. DATE 6.17.04 020.00 [00,787] 021.50 [00.846] ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X PARAMETER MIN PEAK WAVELENGTH

T 177

Contextual Info: PART NUMBER POSITION 1 POSITION 2 POSITION 3 REV. ECN NO. POSITION 4 568-0341-1113 RED DIFFUSED RED DIFFUSED RED DIFFUSED RED DIFFUSED 568-0342-2223 GREEN DIFFUSED GREEN DIFFUSED GREEN DIFFUSED GREEN DIFFUSED 568-0343-3333 YELLOW DIFFUSED YELLOW DIFFUSED YELLOW DIFFUSED

Contextual Info: SENSITRON SEMICONDUCTOR W – SMD-1W Series TECHNICAL DATA DATA SHEET 1113, REV. - DC-DC Converters Wide Input 2:1 , 1000V Isolation, Regulated FEATURES: • • • • • • • • • • • Isolation Voltage : Isolation Resistance (1): Short-Circuit Duration:

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11130-1E MEMORY Unbuffered 2 M x 64 BIT SYNCHRONOUS DYNAMIC RAM DIMM MB8502S064EG-100/-84/-67 168-pin, 4 Clock, 1-bank, based on 2 M × 8 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8502S064EG is a fully decoded, CMOS Synchronous Dynamic Random Access Memory

Contextual Info: AU 6 15 1992 35 HARRIS H M M -11130:%! X BAND GaAs MMIC POWER AMPLIFIER PRELIMINARY DATA SHEET May 1992 _ Features • High Output Power Capability for Driver or Power Stage Applications • Tl/Pt/Au Metallization Enhances Durability and Reliability

MCM67C518

Abstract: MCM67C618 MCM72CF32 MCM72CF64 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MCM72CF32/D SEMICONDUCTOR TECHNICAL DATA Advance Information 256KB and 512KB BurstRAM Secondary Cache Module for Pentium MCM72CF32 MCM72CF64 160–LEAD CARD EDGE CASE 1113A–01 TOP VIEW 1 The MCM72CF32SG and MCM72CF64SG are designed to provide a burstable, high performance, 256K/512K L2 cache for the Pentium microprocessor.

ny smd transistor

Contextual Info: SENSITRON SEMICONDUCTOR W – SMD-1W Series TECHNICAL DATA DATA SHEET 1113, REV. A DC-DC Converters Wide Input 2:1 , 1000V Isolation, Regulated FEATURES: • • • • • • • • • • • Isolation Voltage : Isolation Resistance (1): Short-Circuit Duration:

Contextual Info: This document was generated on 03/30/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 43915-1113 Active Mini-Fit Sr. 10.00mm Pitch Mini-Fit Sr.™ Header, Dual Row, Vertical, 10 Circuits, 3.18mm PCB

2SC4591

Abstract: 2SC4593 DSA003637
Contextual Info: 2SC4593 Silicon NPN Epitaxial ADE-208-1113A Z 2nd. Edition Mar. 2001 Application UHF / VHF wide band amplifier Outline CMPAK 3 1 2 Note: Marking is “XM–”. 1. Emitter 2. Base 3. Collector 2SC4593 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

low barrier schottky

Abstract: MA4E2502 MA4E2532L-1113 MA4E2532L-1113T MA4E2532L-1113W MA4E2532M-1113 macom
Contextual Info: MA4E2532L-1113, MA4E2532M-1113 SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series Features M/A-COM Products Rev. V3 Case Style 1113 • Extremely Low Parasitic Capacitance and Inductance • Surface Mountable in Microwave Circuits, No

ECG1113

Abstract: CI 7405
Contextual Info: P H IL IP S E C G INC 17E • hbSBTaô • • • • OUTPUT POWER 2.1 W 12 V LOW DISTORTION LOW QUIESCENT CURRENT HIGH INPUT IMPEDANCE AUDIO AMPLIFIER 8 il h ,2 4 < f The EC G 1113 is a monolithic integrated c ir ­ cuit in a 14-lead quad in -lin e plastic p ackage.

chn 4558 c

Abstract: chn 4558 sdc 2025 83 fkm 592 PEB 20850 CHN 612 diode PEB2095 2D55 ICL 2025 Siemens IEC MAU
Contextual Info: NOV 2 1 19» j Am2095 C Am2095 ISDN Burst Transceiver Circuit IBC Advanced Micro Devices Data Sheet TM 6/89 /- 11137 C/0 IMI» Dm: This Material Copyrighted By Its Respective Manufacturer July 1990 IBC Technical M anual 6/89 1. Introduction 1.1. Device Overview

OLS 049

Abstract: MS-012AC TEA1113 TEA1113T microphone preamp agc
Contextual Info: Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface 1113 FEATURES GENERAL DESCRIPTION • Low DC line voltage; operates down to 1.6 V excluding polarity guard The T E A 1113 is a bipolar integrated circuit that performs

5SDF11F2501

Abstract: S2200
Contextual Info: Key Parameters VRRM = 2500 IFAVM = 950 IFRMS = 1500 IFSM = 21 VF0 = 1.20 rF = 0.38 VDClink = 1500 V A A kA V mΩ V Fast Recovery Diode 5SDF 11F2501 Doc. No. 5SYA 1113-04 Feb. 99 •Patented free-floating silicon technology •Low on-state and switching losses

Contextual Info: F6482 Series Product Brief PB024602-1113 F6482 Series General-Purpose Flash Microcontroller ADVANTAGES •   AES Encryption Engine simplifies secure data communications while reducing CPU overhead DMA offloads the CPU from realtime tasks Flexible clocking scheme allows

Contextual Info: DATA SHEET CLL620-0101B2-403M1C5 and are trademarks or registered trademarks of CITIZEN HOLDINGS CO., LTD. JAPAN. is a trademark or a registered trademark of CITIZEN ELECTRONICS CO., LTD. JAPAN. Ref.CE-P2508 06/13 R1 1113 DATA SHEET

Contextual Info: MOTE l U f il. I t h l f . l . . . » . « I I I . . I . I . H » . . . g.P m im O m .r c . u l i u .N M iu n « . r . 1113_ l » l« l« . . . I . f » .r i » I. a»« .1 « _ t D .n - H .lt . g S .m rln i > .n

Contextual Info: ALM-11136 870 MHz – 915 MHz Low Noise, High Linearity Amplifier Module with Fail-Safe Bypass Feature Data Sheet Description Features Avago Technologies’ ALM-11136 is an easy-to-use GaAs MMIC Tower Mount Amplifier TMA LNA Module with low IL bypass path. The module has low noise and high linearity

VTB1112B

Abstract: VTB1113B
Contextual Info: VTB Process Photodiodes VTB 11 12B , 1113B PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 19 Small area planar silicon photodiode in a lensed, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high

Contextual Info: 1113F Series Single Color Right Angle Type 2.1 X 1.0 mm Features Package Right Angle Type (2.1 x 1.0 mm) Type, Milky White resin Product features Outer Dimension 2.1 x 1.0 x 0.6mm ( L x W x H ) Temperature range Storage Temperature : -40℃～100℃ Operating Temperature : -30℃～85℃

Contextual Info: • HI-SUPER BRIGHT SURFACE MOUNT LED 1113F Series Right Angle Type 2.1X0.6mm ■ Absolute Maximum Ratings Ta = 25°C Blue Blue Green Green Yellow Red UB UC UG UY UR Unit Power Dissipation Pd 78 78 78 87 87 mW Forward Current IF 20 20 20 30 30 mA Peak Forward Current

CRO1112A

Abstract: MINI-16-SM
Contextual Info: CRO1112A 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev A1 £(f) (dBc/Hz) PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 1112 - 1113 MHz • Tuning Voltage: 0 - 3 Vdc • MINI-16-SM - Style Package

SN1113

Abstract: LT1113
Contextual Info: SPECIFICATION NOTICE 1113 August 1998 Note 7 on page 5 of the LT 1113 has been changed. For complete specifications, typical performance characteristics and applications information, please see the 1113 data sheet. , LTC and LT are registered trademarks of Linear Technology Corporation.