C3474 Search Results

C3474

Abstract: 2SC3474
Contextual Info: C3474 TOSHIBA Transistor Silicon NPN Epitaxial Type C3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)

r9824

Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
Contextual Info: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16

IRF5505

Abstract: C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi
Contextual Info: 6 7 B A 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 REV 08/03/04 CIRCUIT

C3474

Abstract: 2SC3474
Contextual Info: C3474 TOSHIBA Transistor Silicon NPN Epitaxial Type C3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

capacitor 1.50 MKT 400V

Abstract: IEC 68-2-6 Vibration c1474 C3105 1.50 MKT av series C3684 mkt 1.50 400V capacitor 0 033 j mkt 250v capacitor 100 nf 100v mkt Siemens film capacitor
Contextual Info: fl235bOS GG37b47 7 • S IE G MKT Capacitors SIEMENS A K T I E N 6 E S E L L S C H A F M7E D -/ f 'C E3 B 32520 .B 32529 fS l 7 ' O S. M e ta liz a d p o ly e s te r film c a p a c ito rs in a c c o rd a n c e w it h DIN 4 4 1 1 2 VR = 63 to 6 3 0 Vdc

Contextual Info: C3474 TOSHIBA Transistor Silicon NPN Epitaxial Type C3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)

C3474

Abstract: 2SC3474
Contextual Info: C3474 TOSHIBA Transistor Silicon NPN Epitaxial Type C3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

C3474

Abstract: 2SC3474
Contextual Info: C3474 東芝トランジスタ シリコンNPNエピタキシャル形 C3474 ○ スイッチング用 ○ ソレノイドドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 500 最小 (IC = 400 mA) • コレクタ•エミッタ間飽和電圧が低い。

Contextual Info: C3474 TOSHIBA Transistor Silicon NPN Epitaxial Type C3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)

C3474

Abstract: 2SC3474
Contextual Info: C3474 東芝トランジスタ シリコンNPNエピタキシャル形 C3474 ○ スイッチング用 ○ ソレノイドドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 500 最小 (IC = 400 mA) • コレクタ•エミッタ間飽和電圧が低い。

SMC1602

Abstract: SN7002DW c3231 Q2576 r2561 C3239 C3303 C2651 C5060 U4900
Contextual Info: 8 6 7 C B A PAGE PDF 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 2 3

Contextual Info: C3474 TOSHIBA Transistor Silicon NPN Epitaxial Type C3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)

C3474

Abstract: 2SC3474
Contextual Info: C3474 TOSHIBA Transistor Silicon NPN Epitaxial Type C3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)

c3207

Abstract: C3331 c3206 C3374 C3478 C3507 c3355 C3502 Toshiba C3388 c3320
Contextual Info: CR-1 8 7 6 5 3 4 2 1 REVISIONS ZONE DESCRIPTION LTR DATE APPR. SONY PROPRIETARY INFORMATION F F SONY CONFIDENTIAL IRX-3130 E SCHEMATICS E TV TUNER BOARD ENX-31 TABLE OF CONTENTS BLOCK TITLE D PAGE REF.NO. DESCRIPTIONS 1 XXXX - XXXX INDEX THIS PAGE HISTORY

GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

C3331

Abstract: c3207 c3206 C3478 C3381 TP3407 c3355 r3301 C3128 c3309
Contextual Info: CR-1 8 7 6 5 3 4 2 1 REVISIONS ZONE DESCRIPTION LTR DATE APPR. SONY PROPRIETARY INFORMATION F F SONY CONFIDENTIAL IRX-2890 E SCHEMATICS E TV TUNER BOARD ENX-31 TABLE OF CONTENTS BLOCK TITLE D PAGE REF.NO. DESCRIPTIONS 1 XXXX - XXXX INDEX THIS PAGE HISTORY

R9810

Abstract: HT 1200-4 smd r9824 HT 1200-4 c6011 L9707 L5800 c9611 C3150 ic c2335
Contextual Info: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 B 1 2 3 4 6 7 8 9 10 11 13* 14 16 17 18 21* 22

C6104

Abstract: C3684 c1474 C3104
Contextual Info: fl235bOS D037b47 7 M K T Capacitors S IE G □ SIEMENS A KT IE N G E S E L L S C H A F M7E D B 32520 .B 3 2 5 2 9 ft~ O S l 7 - o M etalized polyester film capacitors in accordance w ith D IN 44112 VR = 6 3 to 6 3 0 Vdc W ith quality a sse ssm e n t according to C E C C 30401-043, edition 1, June 1983.

*45F122

Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ