SSH25N40 Search Results

SSH25N40 Functional Equivalents (3)

The Functional Equivalents tab will give you options that are likely to match the same function of SSH25N40, but it may not fit your design.

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Part Number	Manufacturer	Composite Price	Description
PPF360NE3	Microsemi Corporation (now Microchip)	Check for Price	Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA
PPF360M	Microsemi Corporation (now Microchip)	Check for Price	Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
PPF360N	Microsemi Corporation (now Microchip)	Check for Price	Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA

SSH25N40 Datasheets (8)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SSH25N40	Unknown	FET Data Book	Scan	PDF	57.28KB	1
SSH25N40	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	101.14KB	1
SSH25N40	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	52.35KB	1
SSH25N40A	Fairchild Semiconductor	Advanced Power MOSFET	Original	PDF	263.62KB	7
SSH25N40A	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
SSH25N40A	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF	172.31KB	6
SSH25N40A	Unknown	FET Data Book	Scan	PDF	57.28KB	1
SSH25N40A	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	52.35KB	1

SSH25N40 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Advanced SSH25N40A Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 400 V ^ D S o n = 0 .2 Œ lD = 2 5 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 10\|^A(Max.) @ VDS = 400V	OCR Scan	SSH25N40A	PDF
Contextual Info: SSH25N40A Advanced Power MOSFET FEATURES B V dss = 4 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA Max. @ M Low Ros(on) • 0.162	OCR Scan	SSH25N40A	PDF
SSH3N70 Abstract: ssh15n55a SSH20N50A SSH8N60 SSH15N60A SSH20N45A ssh20n50 IRFP453 IRFP452 IRFP451 Contextual Info: FUNCTION GUIDE POWER MOSFETs TO-3P NCHANNEL Continued BVdss(V) ID(onXA) 400.00 5.00 5.50 8.00 10.00 13.00 15.00 25.00 25.00 1.50 1.00 0.80 0.55 0.40 0.30 0.20 0.25 IRFP332 IRFP330 IRFP342 IRFP340 IRFP352 IRFP350 SSH25N40A SSH25N40 450.00 4.00 4.50 7.00 8.00	OCR Scan	IRFP332 IRFP330 IRFP342 IRFP340 IRFP352 IRFP350 SSH25N40A SSH25N40 IRFP433 IRFP431 SSH3N70 ssh15n55a SSH20N50A SSH8N60 SSH15N60A SSH20N45A ssh20n50 IRFP453 IRFP452 IRFP451	PDF
SSH25N40A Abstract: SSH25N40 Contextual Info: SSH25N40A Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS on = 0.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 25 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 10 µ A (Max.) @ VDS = 400V	Original	SSH25N40A SSH25N40A SSH25N40	PDF
ci 648 Abstract: SSH25N35 SSH25N40 250M Contextual Info: N-CHANNEL POWER MOSFETS SSH25N40/35 FEATURES • L o w e r R d s <o n • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	SSH25N40/35 SSH25N40 SSH25N35 ci 648 250M	PDF
3180 diode Abstract: SSH25N40A DS8010 Contextual Info: SSH25N40A Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS on = 0.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 25 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 10 µ A (Max.) @ VDS = 400V	Original	SSH25N40A 3180 diode SSH25N40A DS8010	PDF
J200 mosfet Abstract: SSH25N40 J200 SSH25N40A Contextual Info: Advanced SSH25N40A P o w e r MOSFET FEATURES BVDSS — 400 V • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge RüS on = 0.2 £2 lD = 25 A ■ E xtended S afe O pe ra ting A rea	OCR Scan	SSH25N40A J200 mosfet SSH25N40 J200 SSH25N40A	PDF
RG53 Abstract: SSH25N40A Contextual Info: SSH25N40A A dvanced Power MOSFET FEATURES BVdss = 400 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n = ■ Lower Input Capacitance lD = 25 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10\|iA (M ax.) @ V OS = 400V	OCR Scan	SSH25N40A 0Q40303 O-220-F-4L DD3b33E 003b333 RG53 SSH25N40A	PDF
irfs250a Contextual Info: Device List TO-3P IRFP140A IRFP150A SSH70N10A IRFP240A IRFP250A SSH45N20A IRFP244A IRFP254A IRFP340A IRFP350A SSH25N40A IRFP440A IRFP450A SSH22N50A SSH7N60A SSH10N60A SSH17N60A TO-3PF IRFS140A IRFS150A SSF70N10A IRFS240A IRFS250A SSF45N20A IRFS244A IRFS254A	OCR Scan	IRFP140A IRFP150A SSH70N10A IRFP240A IRFP250A SSH45N20A IRFP244A IRFP254A IRFP340A IRFP350A irfs250a	PDF
irf1740 Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640 Contextual Info: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040	OCR Scan	SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A irf1740 IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640	PDF
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent	PDF
FQA90N08 Abstract: FQA38N30 FQA9N90 equivalent sfh154 FQA85N06 FQA170N06 IRFP150A FQA140N10 FQA160N08 FQA58N08 Contextual Info: Discrete MOSFETs TO-3P RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-3P N-Channel FQA170N06 60 Single 0.0056 - - - 220 170 375 FQA85N06 60 Single 0.01 - - - 86 100 214	Original	FQA170N06 FQA85N06 FQA65N06 FQA160N08 FQA90N08 FQA70N08 FQA58N08 FQA44N08 SFH9240 SFH9250L FQA90N08 FQA38N30 FQA9N90 equivalent sfh154 FQA85N06 FQA170N06 IRFP150A FQA140N10 FQA160N08 FQA58N08	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620	PDF
ssh17n55 Abstract: IRFP141 SSH40N20 SSH22N45 irfp250 Contextual Info: MOSFETs FUNCTION GUIDE TO-3P N-CHANNEL Part Number IRFP141 IRFP151 BV d s s V lD(on)(A) Ros(on)(fl) R0jc(K/W) PD(Watt) Page 80 28.00 0.077 582 0.055 0.030 0.83 0.65 150 40.00 60.00 190 230 280 592 597 SSH60N08 SSH70N08 IHFP140 IRFP150 SSH60N10 SSH70N10 100	OCR Scan	IRFP141 IRFP151 SSH60N08 SSH70N08 IHFP140 IRFP150 SSH60N10 SSH70N10 IRFP241 IRFP251 ssh17n55 SSH40N20 SSH22N45 irfp250	PDF

ss8050 d 331 Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34 Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2	Original	F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34	PDF
SSH10N10 Abstract: SSH10N06 SSH10N70A ssh25n35 SSH10N05 SSH10N08 SSH10N70 SSH8N15 SSH8N18 SSH8N20 Contextual Info: - 310 - S € ± f ft A t Vd s £ Vg s ÍS 11 Ta=25^3 Pd Id Ig s s Vg s Idss th> or £ (V) 4# ti (Ta-25'C) I d (on) D s(on ) Ciss g fs Coss Crss V g s -0 Vgs Vd g % % Vd s = (V) /CH * /C H (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) (max) Id (mA)	OCR Scan	SSH8N15 SSH8N18 SSH8N20 SSH8N55 SSH20N50A SSH25N35 SSH25N35A SSH25N40A SSH40N15 SSH40N15A SSH10N10 SSH10N06 SSH10N70A SSH10N05 SSH10N08 SSH10N70	PDF
SSH22N35 Abstract: SSH22N40 250M SSH25N35 SSH25N40 Contextual Info: N-CHANNEL POWER MOSFETS SSH22N40/35 FEATURES • Lower R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	SSH22N40/35 SSH22N40 SSH22N35 250M SSH25N35 SSH25N40	PDF
SSD2104 Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A Contextual Info: PRODUCT GUIDE DO- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) OS(on) c Hi Q (A) (G) (PF) (nC) I D R PD fC/W) (W) Page 8 0.150 280 17 7.04 18 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 60V IRFR034A 23 0.040	OCR Scan	SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A SSD2104 irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A	PDF
IRF9540 application Abstract: IRF9540 mosfet IRFS730 equivalent RDS 0,50 ID 1,8 A data sheet IRF9540 datasheet irf9640 mosfet IRF9510 IRF9530 mosfet IRFS634 IRFS830 Contextual Info: N-Channel Power MOSFET’s Part No. Drain-Source Min. On-State Typ. Static DS Brkdwn. Voltg. DS Current Resistance BV DSS V ID(ON) (A) RDS(ON)(Ω) Operating Temperature: -55 o C to 150oC Drain-Source Min. On-State Part No. Brkdwn. Voltg. DS Current 40.00	Original	150oC SSH20N50 SSH60N10 SSH15N60 SSH6N60 IRFP250 IRFP150 SSH40N20 IRFP254 SSH25N40 IRF9540 application IRF9540 mosfet IRFS730 equivalent RDS 0,50 ID 1,8 A data sheet IRF9540 datasheet irf9640 mosfet IRF9510 IRF9530 mosfet IRFS634 IRFS830	PDF
Contextual Info: Advanced Power MOSFET S FEATURES • ■ ■ ■ ■ ■ ■ S H 2 5 N 4 0 A BV0SS = 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 uA Max @ Vos*400V	OCR Scan	SSH25BH0A 300nF SSH25N40A	PDF
SM25N Abstract: ssm25n40 Contextual Info: SAMSUNG S E M I C ON DU CT OR INC . ‘ S S m I^ ^ Tfi’ DE \| 7Tb414H DOOSBTB 4 ^ ^ ^ m ^N -C H A N N È L:^^ SSH25N35/25N40 POWER MOSFETS Preliminary Specifications 5 . PRODUCT SUMMARY 400 Volt, 0.25 Ohm SFET Part Number R D S on Id 350V ' 0.25 25A SSM25N40	OCR Scan	7Tb414H SSH25N35/25N40 SSM25N35 SSM25N40 SSH25N35 SSH25N40 SSM25N35/25N40 SM25N	PDF

SSH25N40 Search Results

SSH25N40 Functional Equivalents (3)

SSH25N40 Datasheets (8)

SSH25N40 Datasheets Context Search

SSH3N70

SSH25N40A

ci 648

3180 diode

J200 mosfet

RG53

irfs250a

irf1740

SSP35n03

FQA90N08

YTA630

ssh17n55

ss8050 d 331

SSH10N10

SSH22N35

SSD2104

IRF9540 application

SM25N