SRAM 681000 Search Results

Contextual Info: KM681000BLI/BLI-L CMOS SRAM 128Kx8 Bit Industrial Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Tem perature Range : -40 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power D issipation Standby (CMOS) : 550^W (Max.)L-Ver.

Contextual Info: KM681000BLE / BLE-L CMOS SRAM 128Kx8 Bit Extended Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power Dissipation Standby (CM O S): 550nW(Max.)L-Ver.

A13CH

Abstract: km6810008 A12CZ KM681000BLI km6810008l
Contextual Info: CMOS SRAM KM681000BLI / BLI-L 128Kx8 Bit Industrial Temperature Range Operating SRAM GENERAL DESCRIPTION FEATURES • Industrial Tem perature R ange : -40 to 8 5°C • Fast Access Tim e : 7 0 ,1 0 0 ns M ax. • Low Pow er Dissipation Standby (C M O S ) : 5 5 0 pW (M ax.)L -V er.

68 1103

Abstract: KM681000BL A14F
Contextual Info: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced

681000CLP

Abstract: P55n 681000C 2U27 0-00C M681000CL
Contextual Info: Advance Information KM681000C Family CMOS SRAM 128Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS • Organization : 128Kx8 • Power Supply Voltage : Single 5V +/-10% The KM681000C family is fabricated

cs1g

Contextual Info: KM681000ALI/ALI-L CM O S SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 4 0 to 85°C The KM 681000ALI/ALI-L is a 1,048,576-bit high-speed S ta tic R and o m A c c e s s M em ory o rganized as 131,072

Contextual Info: KM681000B Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft for com m ercial product - Com mercial Product only O ctober 28th, 1992 Prelim inary 0.1 - Initial draft for Extended/Industrial Product

csi-2

Abstract: 256X8
Contextual Info: KM681OOOALPI/ALGI CMOS SRAM 128Kx8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 4 0 to 8 5 ° C • Fast Access Tim e: 70,100 ns (Max.) • Low Power D issipation Standby (CMOS) : 550MW (M ax.) L-\fer.

km681000lp

Abstract: KM681000LG KM681 km681000l
Contextual Info: KM681000L/KM681000L-L CMOS SRAM 128K X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 85, 100, 120ns max. • Low Power Dissipation — Standby (CMOS): 10|jW (typ.) L-Version 5^iW(typ.) L-L Version — O perating : 110mW/MHz (max.)

km681000Alp

Abstract: KM681000A
Contextual Info: CMOS SRAM KM681000AL/KM681OOOAL-L 1 2 8 K X 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 70,85,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10|iW (typ.) L-Version 5(jW (typ.) LL-Version Operating : 35mW (typ.) • Single 5 V ± 10% Power Supply

681000BLP-7L

Abstract: 681000BLP B8100 KM681000BI 681000BLG
Contextual Info: KM681000B Family CMOS SRAM 128K x8 bit Low Power CMOS Static RAM FEATURES G EN ER A L DESCRIPTION • Process Technology: 0.6nm C M O S • Organization: 128Kx8 • Power Supply Voltaga: Single 5.0V±10 % • Low Date Retention Voltage : 2V Mln • Three state output and TTL Compatible

sram 681000

Abstract: KM681000ELG-5L KM681000
Contextual Info: Preliminary KM681000E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. 0.0 H istory Draft Data Remark Design target October 12, 1998 Prelim inary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and

KM681000AL-L

Abstract: KM681000ALT
Contextual Info: CMOS SRAM KM681000AL/KM681OOOAL-L 128K X8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85,100,120ns max. • Low Power Dissipation Standby (CMOS): 1 0/j W (typ.) L-Version 5piW (typ.) LL-Version O perating : 35m W (typ.) • Single 5 V ± 1 0 % Power Supply

Contextual Info: KM681000C Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft Novem ber 22th 1995 Design target 0.1 First revision - Seperate read and write at Icc, Icci Icc = Ic c i -> Read : 15mA, Write : 35m A

KM681000ALT

Abstract: km681000Alp 681000
Contextual Info: KM681000AL/KM681000AL-L CMOS SRAM 1 2 8 K X 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 70,85,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10^W (typ.) L-Version 5^W (typ.) LL-Version Operating : 35m W (typ.) • Single 5 V ± 10% Power Supply

132SA

Abstract: km681000a
Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7'ìt.mMS 0 0 1 4 G 1 5 Ü61 ■ SMGK KM681OOOALI/ALI-L CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 40 to 85°C • Fast Access Time: 70, 100ns Max. • Low Power Dissipation

0820R

Abstract: KM62256B
Contextual Info: KM681OOOBLI/BLI-L ~l3 1 , 0 V2 W O R D X CMOS SRAM 8 B it C M O S S ts tic R A M Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns(max.) • Low Power Dissipation

km681000alt

Contextual Info: SAMSUNG EL EC T R O N I C S INC b7E D • 7^4145 KM681000AL/KM681000AL-L QÜ17SDS 70T « S r i G K CMOS SRAM 1 2 8 K X 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85,100,120ns max. • Low Power Dissipation Standby (CMOS): 1 0/jW (typ.) L-Version

km681000lp

Contextual Info: SAMSUNG E L E C T R O N I C S INC b4E ]> • 7^4142 KM681000L/KM681000L-L 0 D1 3 eì cì b 521 SMGK CMOS SRAM 128K X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 85, 100, 120ns max. • Low Power Dissipation -S ta n d b y (CMOS): lO^W (typ.) L-Version

Contextual Info: K M 681 OOOC Fami l y CMOS SRAM P s c u m e n î Title 1 28K x8 bit Low Power C M O S Static RAM Révision History Revisio n No. Histo ry Draft D a te 0.0 Initial d ra ft N o ve m b e r 22th 1995 0.1 First re visio n Remark D esign ta rg e t A pril 15th 1996

KM681000BLP-7L

Abstract: KM681000B KM681000BL
Contextual Info: KM681000B Family CMOS SRAM D o cu m en t Title 128K x8 bit Low Power CMOS Static RAM R é visio n H is to ry Revision No. History Draft Data Rem ark 0 .0 Initial d ra ft fo r c o m m e rc ia l p ro d u c t - C o m m e rc ia l P ro d u c t o n ly O c to b e r 28 th, 1992

NEC D2732

Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
Contextual Info: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256

KM28C64A

Contextual Info: TABLE OF COm-ENTS FUNCTION GUIDE 1. 2. 3. 4. Introduction. 11 Product G uide. 19

"30 pin simm"

Abstract: 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm
Contextual Info: FUNCTION GUIDE MEMORY ICs 2.2 Dynamic RAM Module Continued Based Component 16M DRAM Base 2.3 Part Number Organization KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8M x 36 8Mx36 8M X 36