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    Samsung Electro-Mechanics KM681000BLP-10

    SRAM Chip Async Single 5V 1M-bit 128K x 8 10ns 32-Pin PDIP
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    Bristol Electronics KM681000BLP-10 34
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    Samsung Semiconductor & Electro-Mechanics KM681000BLP-7

    SRAM Chip Async Single 5V 1M-bit 128K x 8 70ns 32-Pin PDIP
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    Bristol Electronics KM681000BLP-7 1
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    681000BLP Datasheets Context Search

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    681000BLP-7L

    Abstract: 681000BLP B8100 KM681000BI 681000BLG
    Contextual Info: KM681000B Family CMOS SRAM 128K x8 bit Low Power CMOS Static RAM FEATURES G EN ER A L DESCRIPTION • Process Technology: 0.6nm C M O S • Organization: 128Kx8 • Power Supply Voltaga: Single 5.0V±10 % • Low Date Retention Voltage : 2V Mln • Three state output and TTL Compatible


    OCR Scan     		KM681000B 128Kx8 32-DIP-600 32-SOP-525 32-TSQP1-0820F/R 681000BLP-7L 681000BLP B8100 KM681000BI 681000BLG PDF