28F201 Search Results

M28F201

Abstract: 1N914 PLCC32 TSOP32
Contextual Info: S G S -T H O M S O N iiLiisinsMQes M 28F201 2 Mb 256K x 8, Chip Erase FLASH M EM O RY • ■ ■ ■ ■ ■ ■ ■ ■ ■ 5 V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10ps typical ELECTRICAL CHIP ERASE in 1s RANGE

M28F201

Abstract: PLCC32 TSOP32
Contextual Info: SGS-THOMSON iiLiisinsMQes M 28F201 2 Mb 256K x 8, Bulk Erase FLASH M EM ORY 5 V ± 10% SUPPLY VOLTAGE 12V PROG RAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10^is typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION - Active Current: 15mAtypical

1N914

Abstract: M28F201 PLCC32 TSOP32
Contextual Info: S G S -T H O M S O N M 28F201 iiLiisinsM Q es 2 Megabit 256K x 8, Chip Erase FLASH M EM O RY PR ELIM IN A R Y DATA • FAST ACCESS TIME: 70ns ■ LOW POWER CONSUMPTION - Active Current: 15mATyp. - Standby Current: 1 0|jA Typ. ■ 10,000 PROGRAM/ERASE CYCLES

2A153

Abstract: cj cl a17
Contextual Info: ^ jw * SCS-THOMSON M 28F201A M 28V201A iMH g[si(ô [gfug(gir[si(cj)iin(Sg CMOS 2 Megabit (256K x 8, Chip Erase) FLASH MEMORY ABBREVIATED DATA • MEMORY CHIP ERASE ■ SUPPLY VOLTAGE in READ OPERATION - 5V ± 10% for 28F201A version - 3.3V ± 0.3V for M28V201A version

winbond 25080

Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Contextual Info: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

M28F201

Abstract: PLCC32 TSOP32
Contextual Info: w - SCS-THOMSON k7#» IM [MDi[LI STnMDKOD©i> 28F201 2 Mb (256K x 8, Chip Erase FLASH MEMORY • ■ ■ ■ ■ - ■ ■ ■ ■ 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10|xs typical ELECTRICAL CHIP ERASE in 1s RANGE

ED07

Abstract: M28F201
Contextual Info: 28F201A M28V201A S C S -T H O M S O N KÆ0 g^(Ô iLi(g^(ô)10(gi CMOS 2 Megabit (256K x 8, Chip Erase) FLASH MEMORY PRODUCT CONCEPT • MEMORY CHIP ERASE ■ SUPPLY VOLTAGE in READ OPERATION - 5V ± 10% for 28F201A version - 3.3V ± 0.3V for M28V201A version

Contextual Info: $ 7 . 28F201 M28V201 SGS-THOMSON B !ü lD lS [ilL li© ir® S lü O !l® l 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRODUCT PREVIEW • FAST ACCESS TIMES - 60ns for 28F201 version - 150ns for M28V201 version ■ LOW POWER CONSUMPTION - Standby Current: 100nA Max

27C32

Abstract: 24c04 Atmel 27c301 atmel 24c02 39SF040 24C08 ATMEL dataman s4 27C101 Xicor 28256 eeprom 2864a
Contextual Info: Dataman S4 Programmer Device Support List Library Version 2.84 May 2001 8 Bit EPROMS, EEPROMS & Flash ROMS AMD 27010 2716B 2732B 27C010 27C100 27C512L 27HB010 28C256 28F256 29F002NBB 29F040 9716 9864-25 27128 27256 27512 27C020 27C128 27C64 2817A 28F010 28F512

Contextual Info: SGS-THOMSON D iILi 'irM D EÌ 28F201 2 Mb (256K x 8, Chip Erase FLASH MEMORY • ■ ■ > > > ■ ■ ■ ■ 5 V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10^s typical ELECTRICAL CHIP ERASE in 1s RANGE

A13E

Abstract: 28F201 5 pin A13E M28F201
Contextual Info: SGS-1H0MS0N 28F201 m 2 Mb 256K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING • ■ ■ ■ 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10ns typical ■ ELECTRICAL CHIP ERASE in 1s RANGE ■ LOW POWER CONSUMPTION

NEC D2732

Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
Contextual Info: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256

omron relay G2R-2 8 pin 12V DC

Abstract: Tyco 3604 relay krp power source sps 6360 SRD 12VDC SL C data 8873 64 pin colour tv ic TTK SG 2368 transistor DK qe smd eaton T85 rotary Switch PH ON 823 m 8645 ic MB 16651 G
Contextual Info: ND3% BASE1 XXXX5998-1631-1-P 1631 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 19-07-11 Hour: 08:29 TS:TS date TS time RELAYS, SOLENOIDS & CONTACTORS Go Online for Product Availability AUTOMOTIVE RELAYS DG34 SERIES AUTOMOTIVE INDUSTRIAL POWER RELAYS 60-80A AUTOMOTIVE RELAYS CONT.

Contextual Info: SGS-THOMSON 28F201 2 Mb 256K x 8, Chip Erase FLASH MEMORY • 5 V ± 10% SUPPLY VOLTAGE ■ 12V PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 10jis typical ■ ELECTRICAL CHIP ERASE in 1s RANGE ■ LOW POWER CONSUMPTION - Active Current: 15mAtypical