15MATYPICAL Search Results

M28F201

Abstract: PLCC32 TSOP32
Contextual Info: SGS-THOMSON iiLiisinsMQes M 28F201 2 Mb 256K x 8, Bulk Erase FLASH M EM ORY 5 V ± 10% SUPPLY VOLTAGE 12V PROG RAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10^is typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION - Active Current: 15mAtypical

Contextual Info: SGS-THOMSON M28F201 2 Mb 256K x 8, Chip Erase FLASH MEMORY • 5 V ± 10% SUPPLY VOLTAGE ■ 12V PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 10jis typical ■ ELECTRICAL CHIP ERASE in 1s RANGE ■ LOW POWER CONSUMPTION - Active Current: 15mAtypical

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

M28F201

Abstract: 1N914 PLCC32 TSOP32
Contextual Info: S G S -T H O M S O N iiLiisinsMQes M 28F201 2 Mb 256K x 8, Chip Erase FLASH M EM O RY • ■ ■ ■ ■ ■ ■ ■ ■ ■ 5 V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10ps typical ELECTRICAL CHIP ERASE in 1s RANGE

Contextual Info: SGS-THOMSON llllM J ilL liM W Iie i M28W430 M28W440 VERY LOW VOLTAGE 4 Megabit x8 or x16, Block Erase FLASH MEMORY PRODUCT PREVIEW DUAL x8 and x16 ORGANIZATION MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or bottom location) - Two 8K Byte or 4K Word Key Parameter

Contextual Info: S G S -T H O M S O N D iILi 'irM D EÌ M28F201 2 Mb (256K x 8, Bulk Erase FLASH MEMORY • > ■ ■ > ■ ■ ■ ■ ■ 5 V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10|is typical ELECTRICAL CHIP ERASE in 1s RANGE

Contextual Info: SGS-THOMSON D iILi 'irM D EÌ M28F201 2 Mb (256K x 8, Chip Erase FLASH MEMORY • ■ ■ > > > ■ ■ ■ ■ 5 V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10^s typical ELECTRICAL CHIP ERASE in 1s RANGE