SOT1110B Search Results

h116

Contextual Info: Package outline Earless flanged LDMOST ceramic package; 8 leads SOT1110B D A F 5 L D1 D U1 H1 w2 1 2 c D 7 6 y α U2 H Z Z1 Z2 8 3 b E 9 4 b1 E1 w3 Q e Z 4.60 Z1 α Z2 11.71 15.52 64° 4.32 10.64 14.50 62° 5 0.181 0.461 0.611 64° 10 mm scale 0.170 0.419 0.571 62°

rf power transistors

Abstract: SOT539A SOT113 SOT1130A SOT1121A SOT922-1 SOT1135A sot1244c SOT1110B
Contextual Info: Ceramic packages for RF Power Transistors 1 SOT467B SOT467C SOT1135B SOT1135C SOT1130A SOT1130B SOT1135A SOT1135D SOT1120A SOT1120B SOT1121A SOT1121B SOT1121C SOT1121D SOT1112A SOT1112B Ceramic packages for RF Power Transistors (2) SOT1110A SOT1110B SOT1117A

Contextual Info: BLF7G22L-250PB; BLF7G22LS-250PB Power LDMOS transistor Rev. 01 — 16 December 2009 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1.

Contextual Info: BLF6G15LS-250PBRN Power LDMOS transistor Rev. 2 — 18 July 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

200PB

Abstract: BLF7G27LS-200
Contextual Info: BLF7G27L-200PB; BLF7G27LS-200PB Power LDMOS transistor Rev. 1 — 5 April 2011 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

transistor 832

Contextual Info: BLF6G15LS-250PBRN Power LDMOS transistor Rev. 2 — 18 July 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

MPF102 spice model

Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Contextual Info: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for

BA 7891 NG

Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Contextual Info: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进

sot979

Contextual Info: Ceramic packages for RF Power Transistors SOT975B L x W x H (mm SOT538A (5.5 x 4.1 x 2.2 (mm) SOT1227A (7.1 x 6.9 x 3.3 (mm) SOT975C (7.1 x 6.9 x 3.3 (mm) (14.0 x 4.1 x 2.9 (mm) SOT1227B SOT467B (9.7 x 5.8 x 4.3 (mm) SOT467C (20.3 x 5.8 x 4.3 (mm)

BB 509 varicap diode

Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Contextual Info: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

BLF8G22LS-310AV

Abstract: BLP8G07S-140P BLP8G10S-230 SOT12 BLP8G09S-140P q113 BLF8G27LS-60A Gen8A BLF8G10LS-400PV LTE base station
Contextual Info: NXP Gen8 LDMOS RF power Gen8: the next generation of LDMOS RF power for wireless infrastructures This groundbreaking new version of NXP’s proven LDMOS process increases Doherty efficiency by as much as three points and improves gain by as much as 1 dB. Key features

BGU7073

Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

transistor 832

Abstract: 831 transistor
Contextual Info: BLF6G15LS-250PBRN Power LDMOS transistor Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance